JP2006165595A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2006165595A
JP2006165595A JP2006026640A JP2006026640A JP2006165595A JP 2006165595 A JP2006165595 A JP 2006165595A JP 2006026640 A JP2006026640 A JP 2006026640A JP 2006026640 A JP2006026640 A JP 2006026640A JP 2006165595 A JP2006165595 A JP 2006165595A
Authority
JP
Japan
Prior art keywords
electrode
layer
hole
forming
bump electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006026640A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006165595A5 (enExample
Inventor
Akinori Shindo
昭則 進藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2006026640A priority Critical patent/JP2006165595A/ja
Publication of JP2006165595A publication Critical patent/JP2006165595A/ja
Publication of JP2006165595A5 publication Critical patent/JP2006165595A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006026640A 2006-02-03 2006-02-03 半導体装置及びその製造方法 Withdrawn JP2006165595A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006026640A JP2006165595A (ja) 2006-02-03 2006-02-03 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006026640A JP2006165595A (ja) 2006-02-03 2006-02-03 半導体装置及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2003350953A Division JP3794403B2 (ja) 2003-10-09 2003-10-09 半導体装置

Publications (2)

Publication Number Publication Date
JP2006165595A true JP2006165595A (ja) 2006-06-22
JP2006165595A5 JP2006165595A5 (enExample) 2006-11-24

Family

ID=36667158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006026640A Withdrawn JP2006165595A (ja) 2006-02-03 2006-02-03 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2006165595A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172022A (ja) * 2007-01-11 2008-07-24 Seiko Epson Corp 半導体装置及び電子デバイス、並びに、電子デバイスの製造方法
JP2008205249A (ja) * 2007-02-21 2008-09-04 Renesas Technology Corp 半導体装置の製造方法
JP2010192747A (ja) * 2009-02-19 2010-09-02 Seiko Instruments Inc 半導体装置
JP2010199103A (ja) * 2009-02-21 2010-09-09 New Japan Radio Co Ltd 半導体装置の製造方法
US8193029B2 (en) 2009-06-23 2012-06-05 Samsung Electronics Co., Ltd. Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
JP2013508954A (ja) * 2009-10-23 2013-03-07 エーティーアイ・テクノロジーズ・ユーエルシー 半導体ダイにおける応力を軽減するためのルーティング層
CN103563067A (zh) * 2011-04-22 2014-02-05 Ati科技无限责任公司 用于减轻半导体管芯中应力的布线层

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172022A (ja) * 2007-01-11 2008-07-24 Seiko Epson Corp 半導体装置及び電子デバイス、並びに、電子デバイスの製造方法
JP2008205249A (ja) * 2007-02-21 2008-09-04 Renesas Technology Corp 半導体装置の製造方法
JP2010192747A (ja) * 2009-02-19 2010-09-02 Seiko Instruments Inc 半導体装置
JP2010199103A (ja) * 2009-02-21 2010-09-09 New Japan Radio Co Ltd 半導体装置の製造方法
US8193029B2 (en) 2009-06-23 2012-06-05 Samsung Electronics Co., Ltd. Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element
US8330226B2 (en) 2009-06-23 2012-12-11 Samsung Electronics Co., Ltd. Phase-change random access memory devices with a phase-change nanowire having a single element
JP2013508954A (ja) * 2009-10-23 2013-03-07 エーティーアイ・テクノロジーズ・ユーエルシー 半導体ダイにおける応力を軽減するためのルーティング層
US9035471B2 (en) 2009-10-23 2015-05-19 Ati Technologies Ulc Routing layer for mitigating stress in a semiconductor die
US9059159B2 (en) 2009-10-23 2015-06-16 Ati Technologies Ulc Routing layer for mitigating stress in a semiconductor die
CN103563067A (zh) * 2011-04-22 2014-02-05 Ati科技无限责任公司 用于减轻半导体管芯中应力的布线层

Similar Documents

Publication Publication Date Title
JP3794403B2 (ja) 半導体装置
JP4611943B2 (ja) 半導体装置
JP4327656B2 (ja) 半導体装置
JP5299458B2 (ja) 半導体装置および半導体装置ユニット
JP4956947B2 (ja) 薄膜キャパシタ
JP2005005322A (ja) 半導体装置の製造方法、半導体装置
JP2003031576A (ja) 半導体素子及びその製造方法
WO2011058680A1 (ja) 半導体装置
JP2009124042A (ja) 半導体装置
JP2006165595A (ja) 半導体装置及びその製造方法
JP4360293B2 (ja) 半田バンプ電極構造
JP4001115B2 (ja) 半導体装置及びその製造方法
JP2002222811A (ja) 半導体装置およびその製造方法
TWI470745B (zh) 晶片封裝體及其製造方法
US7045894B2 (en) Semiconductor device and manufacturing method thereof
JP3647631B2 (ja) 半導体装置及びその製造方法
JP2005183518A (ja) 半導体装置及びその製造方法、回路基板並びに電子機器
JP2004071872A (ja) 電子装置
JP4725626B2 (ja) 電子装置の製造方法
JP2010092974A (ja) 半導体装置及びその製造方法、並びに電子装置
JP2007005357A (ja) 半導体装置の製造方法
JP2007227970A (ja) 半導体装置及びその製造方法
JP2005085884A (ja) 半導体装置およびその製造方法
JP4769926B2 (ja) 半導体装置及びその製造方法
JP4702827B2 (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061006

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061006

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20070404

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090331

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090615