JP2006165527A5 - - Google Patents

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JP2006165527A5
JP2006165527A5 JP2005325364A JP2005325364A JP2006165527A5 JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5 JP 2005325364 A JP2005325364 A JP 2005325364A JP 2005325364 A JP2005325364 A JP 2005325364A JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5
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field effect
effect transistor
source
electrode
gate electrode
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JP2006165527A (ja
JP5118810B2 (ja
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JP2005325364A 2004-11-10 2005-11-09 電界効果型トランジスタ Expired - Lifetime JP5118810B2 (ja)

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JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2004326688 2004-11-10
JP2004326688 2004-11-10
JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2006165527A JP2006165527A (ja) 2006-06-22
JP2006165527A5 true JP2006165527A5 (https=) 2008-12-25
JP5118810B2 JP5118810B2 (ja) 2013-01-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader

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JPWO2008136505A1 (ja) 2007-05-08 2010-07-29 出光興産株式会社 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法
JP5522889B2 (ja) 2007-05-11 2014-06-18 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ−Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット
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JP5202630B2 (ja) 2008-06-10 2013-06-05 Ｊｘ日鉱日石金属株式会社 スパッタリング用酸化物焼結体ターゲット及びその製造方法
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US9082857B2 (en) * 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
WO2010029859A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101722913B1 (ko) 2008-09-12 2017-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2010029885A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI567829B (zh) 2008-10-31 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI574423B (zh) * 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
KR101457837B1 (ko) 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
WO2011001880A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
JP5507133B2 (ja) * 2009-07-03 2014-05-28 富士フイルム株式会社 ボトムゲート構造の薄膜トランジスタの製造方法
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5403464B2 (ja) * 2009-08-14 2014-01-29 Ｎｌｔテクノロジー株式会社 薄膜デバイス及びその製造方法
CN102511082B (zh) * 2009-09-16 2016-04-27 株式会社半导体能源研究所 半导体器件及其制造方法
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CN107886916B (zh) 2009-12-18 2021-09-21 株式会社半导体能源研究所 液晶显示装置及其驱动方法
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JP2016115907A (ja) * 2014-12-18 2016-06-23 三菱電機株式会社 薄膜トランジスタ及びその製造方法、アレイ基板並びに液晶表示装置
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI720097B (zh) 2016-07-11 2021-03-01 日商半導體能源硏究所股份有限公司 濺射靶材及濺射靶材的製造方法
TWI875084B (zh) 2016-07-11 2025-03-01 日商半導體能源研究所股份有限公司 金屬氧化物及半導體裝置
WO2018100465A1 (ja) 2016-12-02 2018-06-07 株式会社半導体エネルギー研究所 半導体装置
WO2018181716A1 (ja) 2017-03-30 2018-10-04 出光興産株式会社 ガーネット化合物、酸化物焼結体、酸化物半導体薄膜、薄膜トランジスタ、電子機器、およびイメージセンサー
CN113728451B (zh) 2019-05-24 2025-09-16 索尼集团公司 摄像元件、层叠式摄像元件和固态摄像装置以及摄像元件的制造方法
KR20240002704A (ko) 2022-06-29 2024-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃 및 스퍼터링용 타깃의 제작 방법

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader

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