JP5118810B2 - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ Download PDF

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Publication number
JP5118810B2
JP5118810B2 JP2005325364A JP2005325364A JP5118810B2 JP 5118810 B2 JP5118810 B2 JP 5118810B2 JP 2005325364 A JP2005325364 A JP 2005325364A JP 2005325364 A JP2005325364 A JP 2005325364A JP 5118810 B2 JP5118810 B2 JP 5118810B2
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Japan
Prior art keywords
film
amorphous
transistor
thin film
gate
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Expired - Lifetime
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Japanese (ja)
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JP2006165527A5 (https=
JP2006165527A (ja
Inventor
芳幸 長田
秀雄 細野
利夫 神谷
研二 野村
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Canon Inc
Tokyo Institute of Technology NUC
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Canon Inc
Tokyo Institute of Technology NUC
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Priority to JP2005325364A priority Critical patent/JP5118810B2/ja
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Publication of JP2006165527A5 publication Critical patent/JP2006165527A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2005325364A 2004-11-10 2005-11-09 電界効果型トランジスタ Expired - Lifetime JP5118810B2 (ja)

Priority Applications (1)

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JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2004326688 2004-11-10
JP2004326688 2004-11-10
JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2006165527A JP2006165527A (ja) 2006-06-22
JP2006165527A5 JP2006165527A5 (https=) 2008-12-25
JP5118810B2 true JP5118810B2 (ja) 2013-01-16

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US10734413B2 (en) 2016-07-11 2020-08-04 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and semiconductor device
US11075075B2 (en) 2016-12-02 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide with multiple regions
US11081326B2 (en) 2016-07-11 2021-08-03 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same
KR20240002704A (ko) 2022-06-29 2024-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃 및 스퍼터링용 타깃의 제작 방법

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TWI574423B (zh) * 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
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CN102511082B (zh) * 2009-09-16 2016-04-27 株式会社半导体能源研究所 半导体器件及其制造方法
KR101820973B1 (ko) 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR102577885B1 (ko) 2009-10-16 2023-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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