JP2006156972A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP2006156972A
JP2006156972A JP2005308957A JP2005308957A JP2006156972A JP 2006156972 A JP2006156972 A JP 2006156972A JP 2005308957 A JP2005308957 A JP 2005308957A JP 2005308957 A JP2005308957 A JP 2005308957A JP 2006156972 A JP2006156972 A JP 2006156972A
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Japan
Prior art keywords
semiconductor film
film
group
island
film containing
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JP2005308957A
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Japanese (ja)
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JP2006156972A5 (https=
Inventor
Tatsuya Honda
達也 本田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005308957A priority Critical patent/JP2006156972A/ja
Publication of JP2006156972A publication Critical patent/JP2006156972A/ja
Publication of JP2006156972A5 publication Critical patent/JP2006156972A5/ja
Withdrawn legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005308957A 2004-10-28 2005-10-24 半導体装置及びその作製方法 Withdrawn JP2006156972A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005308957A JP2006156972A (ja) 2004-10-28 2005-10-24 半導体装置及びその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004314346 2004-10-28
JP2005308957A JP2006156972A (ja) 2004-10-28 2005-10-24 半導体装置及びその作製方法

Publications (2)

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JP2006156972A true JP2006156972A (ja) 2006-06-15
JP2006156972A5 JP2006156972A5 (https=) 2008-08-21

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JP2005308957A Withdrawn JP2006156972A (ja) 2004-10-28 2005-10-24 半導体装置及びその作製方法

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218626A (ja) * 2007-03-02 2008-09-18 Mitsubishi Electric Corp Ｔｆｔアレイ基板及びその製造方法
JP2009212170A (ja) * 2008-02-29 2009-09-17 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置
WO2014196216A1 (ja) * 2013-06-05 2014-12-11 株式会社 東芝 イメージセンサ装置及びその製造方法
CN104485362A (zh) * 2007-08-31 2015-04-01 株式会社半导体能源研究所 显示装置以及显示装置的制造方法
JP2018101640A (ja) * 2008-10-16 2018-06-28 株式会社半導体エネルギー研究所 発光装置及び表示装置
JP2024515032A (ja) * 2021-03-31 2024-04-04 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 担体の直接接合及び剥離

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818053A (ja) * 1994-06-28 1996-01-19 Mitsubishi Electric Corp 薄膜トランジスタ及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818053A (ja) * 1994-06-28 1996-01-19 Mitsubishi Electric Corp 薄膜トランジスタ及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218626A (ja) * 2007-03-02 2008-09-18 Mitsubishi Electric Corp Ｔｆｔアレイ基板及びその製造方法
CN104485362A (zh) * 2007-08-31 2015-04-01 株式会社半导体能源研究所 显示装置以及显示装置的制造方法
JP2009212170A (ja) * 2008-02-29 2009-09-17 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置
JP2018101640A (ja) * 2008-10-16 2018-06-28 株式会社半導体エネルギー研究所 発光装置及び表示装置
US11189676B2 (en) 2008-10-16 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having fluorescent and phosphorescent materials
US11930668B2 (en) 2008-10-16 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Flexible light-emitting device and EL module including transparent conductive film
WO2014196216A1 (ja) * 2013-06-05 2014-12-11 株式会社 東芝 イメージセンサ装置及びその製造方法
US9787924B2 (en) 2013-06-05 2017-10-10 Kabushiki Kaisha Toshiba Image sensor device, image processing device and method for manufacturing image sensor device
JP2024515032A (ja) * 2021-03-31 2024-04-04 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 担体の直接接合及び剥離

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