JP2006148084A5 - - Google Patents
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- Publication number
- JP2006148084A5 JP2006148084A5 JP2005304375A JP2005304375A JP2006148084A5 JP 2006148084 A5 JP2006148084 A5 JP 2006148084A5 JP 2005304375 A JP2005304375 A JP 2005304375A JP 2005304375 A JP2005304375 A JP 2005304375A JP 2006148084 A5 JP2006148084 A5 JP 2006148084A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- field effect
- effect transistor
- layer
- organic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 claims 22
- 239000004065 semiconductor Substances 0.000 claims 16
- 150000002894 organic compounds Chemical class 0.000 claims 13
- 239000013078 crystal Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000002253 acid Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 230000006870 function Effects 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 claims 1
- FNDFKMXAOATGJU-UHFFFAOYSA-N 1-phenyl-2-sulfonylethanone Chemical class O=S(=O)=CC(=O)C1=CC=CC=C1 FNDFKMXAOATGJU-UHFFFAOYSA-N 0.000 claims 1
- 125000005410 aryl sulfonium group Chemical group 0.000 claims 1
- 229920000547 conjugated polymer Polymers 0.000 claims 1
- 230000005525 hole transport Effects 0.000 claims 1
- -1 p-nitrobenzyl ester Chemical class 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005304375A JP4767653B2 (ja) | 2004-10-22 | 2005-10-19 | 半導体装置及び無線チップ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004308838 | 2004-10-22 | ||
| JP2004308838 | 2004-10-22 | ||
| JP2005304375A JP4767653B2 (ja) | 2004-10-22 | 2005-10-19 | 半導体装置及び無線チップ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010259096A Division JP5268197B2 (ja) | 2004-10-22 | 2010-11-19 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006148084A JP2006148084A (ja) | 2006-06-08 |
| JP2006148084A5 true JP2006148084A5 (enExample) | 2008-09-18 |
| JP4767653B2 JP4767653B2 (ja) | 2011-09-07 |
Family
ID=36627359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005304375A Expired - Fee Related JP4767653B2 (ja) | 2004-10-22 | 2005-10-19 | 半導体装置及び無線チップ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4767653B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5171129B2 (ja) * | 2006-06-28 | 2013-03-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7719001B2 (en) | 2006-06-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with metal oxides and an organic compound |
| EP1883109B1 (en) * | 2006-07-28 | 2013-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and method of manufacturing thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4115872A (en) * | 1977-05-31 | 1978-09-19 | Burroughs Corporation | Amorphous semiconductor memory device for employment in an electrically alterable read-only memory |
| IL61671A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Diode and rom or eeprom devices using it |
| JP2982286B2 (ja) * | 1990-10-30 | 1999-11-22 | オムロン株式会社 | データキャリア |
| JP3761300B2 (ja) * | 1997-09-30 | 2006-03-29 | 株式会社東芝 | シフトレジスター型記憶素子 |
| JP2000113152A (ja) * | 1998-10-05 | 2000-04-21 | Hitachi Maxell Ltd | 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ |
| WO2001073845A1 (en) * | 2000-03-28 | 2001-10-04 | Koninklijke Philips Electronics N.V. | Integrated circuit with programmable memory element |
| JP3377786B2 (ja) * | 2000-06-21 | 2003-02-17 | 日立マクセル株式会社 | 半導体チップ |
| JP2002026283A (ja) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
| US7116593B2 (en) * | 2002-02-01 | 2006-10-03 | Hitachi, Ltd. | Storage device |
| JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
| JP4509467B2 (ja) * | 2002-11-08 | 2010-07-21 | シャープ株式会社 | 不揮発可変抵抗素子、及び記憶装置 |
| JP4323813B2 (ja) * | 2003-01-14 | 2009-09-02 | キヤノン株式会社 | 基板の製造方法 |
| JPWO2004073079A1 (ja) * | 2003-02-14 | 2006-06-01 | 富士電機ホールディングス株式会社 | スイッチング素子 |
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2005
- 2005-10-19 JP JP2005304375A patent/JP4767653B2/ja not_active Expired - Fee Related