WO2009044800A1 - 電極の製造方法、電子回路パターン、薄膜トランジスタ素子及び有機エレクトロルミネッセンス素子 - Google Patents

電極の製造方法、電子回路パターン、薄膜トランジスタ素子及び有機エレクトロルミネッセンス素子 Download PDF

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Publication number
WO2009044800A1
WO2009044800A1 PCT/JP2008/067910 JP2008067910W WO2009044800A1 WO 2009044800 A1 WO2009044800 A1 WO 2009044800A1 JP 2008067910 W JP2008067910 W JP 2008067910W WO 2009044800 A1 WO2009044800 A1 WO 2009044800A1
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WIPO (PCT)
Prior art keywords
thin
circuit pattern
electrode
organic electroluminescence
electronic circuit
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PCT/JP2008/067910
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English (en)
French (fr)
Inventor
Makoto Honda
Katsura Hirai
Hiroshi Kita
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Konica Minolta Holdings, Inc.
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Priority to JP2009536079A priority Critical patent/JP5310559B2/ja
Publication of WO2009044800A1 publication Critical patent/WO2009044800A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　本発明は、低抵抗かつ超微細な回路パターンを形成でき、耐熱性の低い樹脂基板にも適用でき、電極材料として一般的な銀、金、銅、白金、ニッケル、アルミニウムを使用でき、かつ生産効率が高い電極及びその製造方法を提供し、さらには、該電極を用いた電子回路パターン、薄膜トランジスタ素子及び有機エレクトロルミネッセンス素子提供する。この電極の製造方法は、基板上に金属微粒子及び、電磁波吸収能を持つ金属酸化物または金属酸化物の前駆体を含む薄膜パターンを形成した後、前記薄膜パターンを形成した基板に対して導電体を直接的または間接的に配置し、前記薄膜パターンに電磁波を照射することにより、前記金属微粒子を結合することを特徴とする。
PCT/JP2008/067910 2007-10-03 2008-10-02 電極の製造方法、電子回路パターン、薄膜トランジスタ素子及び有機エレクトロルミネッセンス素子 WO2009044800A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536079A JP5310559B2 (ja) 2007-10-03 2008-10-02 電極の製造方法、電子回路パターン、薄膜トランジスタ素子及び有機エレクトロルミネッセンス素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-259627 2007-10-03
JP2007259627 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044800A1 true WO2009044800A1 (ja) 2009-04-09

Family

ID=40526224

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PCT/JP2008/067910 WO2009044800A1 (ja) 2007-10-03 2008-10-02 電極の製造方法、電子回路パターン、薄膜トランジスタ素子及び有機エレクトロルミネッセンス素子

Country Status (2)

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JP (1) JP5310559B2 (ja)
WO (1) WO2009044800A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011008991A (ja) * 2009-06-24 2011-01-13 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子、白色有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2011159885A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 薄膜の製造方法
KR101334920B1 (ko) 2011-04-13 2013-11-29 한국기계연구원 마이크로웨이브를 이용한 패턴형성방법
WO2014108995A1 (ja) * 2013-01-08 2014-07-17 富士機械製造株式会社 金属膜形成方法、および印刷装置
JP2019204915A (ja) * 2018-05-25 2019-11-28 コニカミノルタ株式会社 金属アルコキシド含有組成物、金属酸化物薄膜及びその作製方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003308984A (ja) * 2002-04-17 2003-10-31 Fujikura Ltd 有機エレクトロルミネッセンス素子およびその製造方法
JP2005079010A (ja) * 2003-09-02 2005-03-24 Seiko Epson Corp 導電膜パターンの形成方法、電気光学装置及び電子機器
JP2006060064A (ja) * 2004-08-20 2006-03-02 Ishikawajima Harima Heavy Ind Co Ltd 薄膜のマイクロ波加熱方法
JP2006261528A (ja) * 2005-03-18 2006-09-28 Ricoh Co Ltd 有機薄膜トランジスタ、それを備えた表示装置および有機薄膜トランジスタの製造方法。
JP2006269984A (ja) * 2005-03-25 2006-10-05 Furukawa Electric Co Ltd:The 高周波電磁波照射による金属粒子を相互融着するための金属粒子の焼生方法及びそれを用いて製造した電子部品と金属粒子焼成用材料
JP2006276121A (ja) * 2005-03-28 2006-10-12 Seiko Epson Corp 機能性膜パターン成膜方法、機能性膜パターン、および電子機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04367268A (ja) * 1991-06-14 1992-12-18 Nec Corp 薄膜トランジスタアレイ装置
JPH0610929U (ja) * 1992-07-20 1994-02-10 カシオ計算機株式会社 アクティブマトリクス液晶表示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003308984A (ja) * 2002-04-17 2003-10-31 Fujikura Ltd 有機エレクトロルミネッセンス素子およびその製造方法
JP2005079010A (ja) * 2003-09-02 2005-03-24 Seiko Epson Corp 導電膜パターンの形成方法、電気光学装置及び電子機器
JP2006060064A (ja) * 2004-08-20 2006-03-02 Ishikawajima Harima Heavy Ind Co Ltd 薄膜のマイクロ波加熱方法
JP2006261528A (ja) * 2005-03-18 2006-09-28 Ricoh Co Ltd 有機薄膜トランジスタ、それを備えた表示装置および有機薄膜トランジスタの製造方法。
JP2006269984A (ja) * 2005-03-25 2006-10-05 Furukawa Electric Co Ltd:The 高周波電磁波照射による金属粒子を相互融着するための金属粒子の焼生方法及びそれを用いて製造した電子部品と金属粒子焼成用材料
JP2006276121A (ja) * 2005-03-28 2006-10-12 Seiko Epson Corp 機能性膜パターン成膜方法、機能性膜パターン、および電子機器

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011008991A (ja) * 2009-06-24 2011-01-13 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子、白色有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2011159885A (ja) * 2010-02-02 2011-08-18 Toshiba Corp 薄膜の製造方法
KR101334920B1 (ko) 2011-04-13 2013-11-29 한국기계연구원 마이크로웨이브를 이용한 패턴형성방법
WO2014108995A1 (ja) * 2013-01-08 2014-07-17 富士機械製造株式会社 金属膜形成方法、および印刷装置
JPWO2014108995A1 (ja) * 2013-01-08 2017-01-19 富士機械製造株式会社 金属膜形成方法、および印刷装置
JP2019204915A (ja) * 2018-05-25 2019-11-28 コニカミノルタ株式会社 金属アルコキシド含有組成物、金属酸化物薄膜及びその作製方法
JP7070091B2 (ja) 2018-05-25 2022-05-18 コニカミノルタ株式会社 金属アルコキシド含有組成物、金属酸化物薄膜及びその作製方法

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JP5310559B2 (ja) 2013-10-09

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