JP4767653B2 - 半導体装置及び無線チップ - Google Patents

半導体装置及び無線チップ Download PDF

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Publication number
JP4767653B2
JP4767653B2 JP2005304375A JP2005304375A JP4767653B2 JP 4767653 B2 JP4767653 B2 JP 4767653B2 JP 2005304375 A JP2005304375 A JP 2005304375A JP 2005304375 A JP2005304375 A JP 2005304375A JP 4767653 B2 JP4767653 B2 JP 4767653B2
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Japan
Prior art keywords
layer
conductive layer
organic compound
semiconductor device
memory
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Expired - Fee Related
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JP2005304375A
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English (en)
Japanese (ja)
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JP2006148084A5 (enExample
JP2006148084A (ja
Inventor
寛子 安部
裕司 岩城
幹央 湯川
舜平 山崎
康行 荒井
康子 渡辺
芳隆 守屋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005304375A priority Critical patent/JP4767653B2/ja
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Publication of JP2006148084A5 publication Critical patent/JP2006148084A5/ja
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Publication of JP4767653B2 publication Critical patent/JP4767653B2/ja
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JP2005304375A 2004-10-22 2005-10-19 半導体装置及び無線チップ Expired - Fee Related JP4767653B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005304375A JP4767653B2 (ja) 2004-10-22 2005-10-19 半導体装置及び無線チップ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004308838 2004-10-22
JP2004308838 2004-10-22
JP2005304375A JP4767653B2 (ja) 2004-10-22 2005-10-19 半導体装置及び無線チップ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010259096A Division JP5268197B2 (ja) 2004-10-22 2010-11-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2006148084A JP2006148084A (ja) 2006-06-08
JP2006148084A5 JP2006148084A5 (enExample) 2008-09-18
JP4767653B2 true JP4767653B2 (ja) 2011-09-07

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ID=36627359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005304375A Expired - Fee Related JP4767653B2 (ja) 2004-10-22 2005-10-19 半導体装置及び無線チップ

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JP (1) JP4767653B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5171129B2 (ja) * 2006-06-28 2013-03-27 株式会社半導体エネルギー研究所 半導体装置
US7719001B2 (en) 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
EP1883109B1 (en) * 2006-07-28 2013-05-15 Semiconductor Energy Laboratory Co., Ltd. Memory element and method of manufacturing thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115872A (en) * 1977-05-31 1978-09-19 Burroughs Corporation Amorphous semiconductor memory device for employment in an electrically alterable read-only memory
IL61671A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Diode and rom or eeprom devices using it
JP2982286B2 (ja) * 1990-10-30 1999-11-22 オムロン株式会社 データキャリア
JP3761300B2 (ja) * 1997-09-30 2006-03-29 株式会社東芝 シフトレジスター型記憶素子
JP2000113152A (ja) * 1998-10-05 2000-04-21 Hitachi Maxell Ltd 非接触メモリ素子を内蔵した磁気ストライプテープ及びそれを利用して製造されたｉｃカード及びｉｃタグ
WO2001073845A1 (en) * 2000-03-28 2001-10-04 Koninklijke Philips Electronics N.V. Integrated circuit with programmable memory element
JP3377786B2 (ja) * 2000-06-21 2003-02-17 日立マクセル株式会社 半導体チップ
JP2002026283A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 多層構造のメモリ装置及びその製造方法
US7116593B2 (en) * 2002-02-01 2006-10-03 Hitachi, Ltd. Storage device
JP2003243631A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム
JP4509467B2 (ja) * 2002-11-08 2010-07-21 シャープ株式会社 不揮発可変抵抗素子、及び記憶装置
JP4323813B2 (ja) * 2003-01-14 2009-09-02 キヤノン株式会社 基板の製造方法
JPWO2004073079A1 (ja) * 2003-02-14 2006-06-01 富士電機ホールディングス株式会社 スイッチング素子

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JP2006148084A (ja) 2006-06-08

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