JP5171129B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5171129B2 JP5171129B2 JP2007168627A JP2007168627A JP5171129B2 JP 5171129 B2 JP5171129 B2 JP 5171129B2 JP 2007168627 A JP2007168627 A JP 2007168627A JP 2007168627 A JP2007168627 A JP 2007168627A JP 5171129 B2 JP5171129 B2 JP 5171129B2
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- Prior art keywords
- layer
- metal oxide
- oxide
- memory
- semiconductor material
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 150000002894 organic compounds Chemical class 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 43
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 8
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 8
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- NFYLSJDPENHSBT-UHFFFAOYSA-N chromium(3+);lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+3].[La+3] NFYLSJDPENHSBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 2
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- BQENXCOZCUHKRE-UHFFFAOYSA-N [La+3].[La+3].[O-][Mn]([O-])=O.[O-][Mn]([O-])=O.[O-][Mn]([O-])=O Chemical compound [La+3].[La+3].[O-][Mn]([O-])=O.[O-][Mn]([O-])=O.[O-][Mn]([O-])=O BQENXCOZCUHKRE-UHFFFAOYSA-N 0.000 claims 1
- WMHSAFDEIXKKMV-UHFFFAOYSA-N oxoantimony;oxotin Chemical compound [Sn]=O.[Sb]=O WMHSAFDEIXKKMV-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 205
- 150000004706 metal oxides Chemical class 0.000 description 129
- 229910044991 metal oxide Inorganic materials 0.000 description 127
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- 238000004519 manufacturing process Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 8
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- 238000007667 floating Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
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- 239000010703 silicon Substances 0.000 description 5
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- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- SPDPTFAJSFKAMT-UHFFFAOYSA-N 1-n-[4-[4-(n-[4-(3-methyl-n-(3-methylphenyl)anilino)phenyl]anilino)phenyl]phenyl]-4-n,4-n-bis(3-methylphenyl)-1-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SPDPTFAJSFKAMT-UHFFFAOYSA-N 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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Description
本実施の形態では、絶縁表面を有する基板の一つであるガラス基板上に、複数のメモリ素子を有するパッシブマトリクス型の記憶装置を作製する方法の一例について図1(A)を用いて説明する。図1(A)は、一つのメモリ素子の断面模式図である。
実施の形態1では、PN接合を形成する金属酸化物層の積層と、該積層上に有機化合物を含む層とを有するメモリ素子の例を示したが、本実施の形態では、有機化合物を含む層上に第1の金属酸化物層と第2の金属酸化物層とがPN接合を構成するように積層させたメモリ素子の例を示す。
本実施の形態では、第1の金属酸化物層上に有機化合物を含む層を設け、該層上に第2の金属酸化物層を設けたメモリ素子の例を示す。
16:ビット線
18a:選択セル
18b:非選択セル
21:メモリセル
22:メモリセルアレイ
80:記憶素子
110:第1の電極
111:第1の金属酸化物層
112:有機化合物を含む層
113:第2の電極
114:第2の金属酸化物層
210:第1の電極
211:第1の金属酸化物層
212:有機化合物を含む層
213:第2の電極
214:第2の金属酸化物層
310:第1の電極
311:第1の金属酸化物層
312:有機化合物を含む層
313:第2の電極
314:第2の金属酸化物層
501:基板
502:金属層
503:酸化金属層
504:絶縁膜
513:第1の電極
514:隔壁
515p:第1の金属酸化物層
515n:第1の金属酸化物層
515m:有機化合物を含む層
516:第2の電極
521:メモリセル
522:逆テーパ状の隔壁
1511:電源回路
1512:クロック発生回路
1513:データ復調/変調回路
1514:制御回路
1515:インターフェイス回路
1516:記憶回路
1517:データバス
1518:アンテナ
1519:リーダライタ
1520:半導体装置
1523a:センサ
1523b:センサ回路
2700:筐体
2701:パネル
2702:ハウジング
2703:プリント配線基板
2704:操作ボタン
2705:バッテリ
2706:筐体
2708:接続フィルム
2709:画素領域
5001:カラムデコーダ
5002:ローデコーダ
5003:セレクタ
5004:読み出し回路
5005:書き込み回路
5008:記憶装置
7001 電圧発生回路
7002 タイミング制御回路
Claims (4)
- 第1の導電層と、
前記第1の導電層上方の、開口部を有する第1の絶縁層と、
前記第1の絶縁層上方の、逆テーパ状の第2の絶縁層と、
前記第1の導電層上方の第1の層と、
前記第1の層上方の第2の層と、
前記第2の層上方の第3の層と、
前記第3の層上方の第2の導電層と、
前記第2の絶縁層上方の第4の層と、
前記第4の層上方の第5の層と、
前記第5の層上方の第6の層と、
前記第6の層上方の第3の導電層と、を有し、
前記第1の層及び前記第4の層は、n型の半導体材料又はp型の半導体材料の一方を有し、
前記第2の層及び前記第5の層は、n型の半導体材料又はp型の半導体材料の他方を有し、
前記第3の層及び前記第6の層は、有機化合物を有することを特徴とする半導体装置。 - 第1の導電層と、
前記第1の導電層上方の、開口部を有する第1の絶縁層と、
前記第1の絶縁層上方の、逆テーパ状の第2の絶縁層と、
前記第1の導電層上方の第1の層と、
前記第1の層上方の第2の層と、
前記第2の層上方の第3の層と、
前記第3の層上方の第2の導電層と、
前記第2の絶縁層上方の第4の層と、
前記第4の層上方の第5の層と、
前記第5の層上方の第6の層と、
前記第6の層上方の第3の導電層と、を有し、
前記第1の層及び前記第4の層は、有機化合物を有し、
前記第2の層及び前記第5の層は、n型の半導体材料又はp型の半導体材料の一方を有し、
前記第3の層及び前記第6の層は、n型の半導体材料又はp型の半導体材料の他方を有することを特徴とする半導体装置。 - 第1の導電層と、
前記第1の導電層上方の、開口部を有する第1の絶縁層と、
前記第1の絶縁層上方の、逆テーパ状の第2の絶縁層と、
前記第1の導電層上方の第1の層と、
前記第1の層上方の第2の層と、
前記第2の層上方の第3の層と、
前記第3の層上方の第2の導電層と、
前記第2の絶縁層上方の第4の層と、
前記第4の層上方の第5の層と、
前記第5の層上方の第6の層と、
前記第6の層上方の第3の導電層と、を有し、
前記第1の層及び前記第4の層は、n型の半導体材料又はp型の半導体材料の一方を有し、
前記第2の層及び前記第5の層は、有機化合物を有し、
前記第3の層及び前記第6の層は、n型の半導体材料又はp型の半導体材料の他方を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記n型の半導体材料は、アルミ酸化物を有する亜鉛酸化物、タンタル酸化物を有するチタン酸化物、チタン酸化物を有する鉄酸化物、ランタン酸化物若しくはタンタル酸化物を有するチタン酸バリウム、アンチモン酸化物を有するスズ酸化物、又はチタン酸化物を有するカリウム酸化物であり、
前記p型の半導体材料は、リチウム酸化物を有するニッケル酸化物、リチウム酸化物を有するコバルト酸化物、リチウム酸化物を有する鉄酸化物、リチウム酸化物を有するマンガン酸化物、バリウム酸化物を有するビスマス酸化物、マグネシウム酸化物を有するクロム酸化物、ストロンチウム酸化物を有するランタンクロマイト、又はストロンチウム酸化物を有するランタンマンガナイトであることを特徴とする半導体装置。
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