JP2006080234A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006080234A5 JP2006080234A5 JP2004261474A JP2004261474A JP2006080234A5 JP 2006080234 A5 JP2006080234 A5 JP 2006080234A5 JP 2004261474 A JP2004261474 A JP 2004261474A JP 2004261474 A JP2004261474 A JP 2004261474A JP 2006080234 A5 JP2006080234 A5 JP 2006080234A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- semiconductor device
- additive
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims 32
- 239000000463 material Substances 0.000 claims 15
- 239000000654 additive Substances 0.000 claims 14
- 230000000996 additive effect Effects 0.000 claims 14
- 229910052751 metal Inorganic materials 0.000 claims 13
- 239000002184 metal Substances 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000000956 alloy Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 229910045601 alloy Inorganic materials 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 229910052768 actinide Inorganic materials 0.000 claims 2
- 150000001255 actinides Chemical class 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- 239000011229 interlayer Substances 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims 2
- 150000002602 lanthanoids Chemical class 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004261474A JP2006080234A (ja) | 2004-09-08 | 2004-09-08 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004261474A JP2006080234A (ja) | 2004-09-08 | 2004-09-08 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006080234A JP2006080234A (ja) | 2006-03-23 |
| JP2006080234A5 true JP2006080234A5 (enExample) | 2007-10-04 |
Family
ID=36159457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004261474A Pending JP2006080234A (ja) | 2004-09-08 | 2004-09-08 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006080234A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4740083B2 (ja) | 2006-10-05 | 2011-08-03 | 株式会社東芝 | 半導体装置、およびその製造方法 |
| US8698697B2 (en) * | 2007-06-12 | 2014-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5309722B2 (ja) * | 2007-11-14 | 2013-10-09 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| US8168532B2 (en) | 2007-11-14 | 2012-05-01 | Fujitsu Limited | Method of manufacturing a multilayer interconnection structure in a semiconductor device |
| JP5310721B2 (ja) * | 2008-06-18 | 2013-10-09 | 富士通株式会社 | 半導体装置とその製造方法 |
| JP5343417B2 (ja) * | 2008-06-25 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| JP5417754B2 (ja) | 2008-07-11 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜方法及び処理システム |
| JP2010087094A (ja) * | 2008-09-30 | 2010-04-15 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
| JP5493096B2 (ja) | 2009-08-06 | 2014-05-14 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR102121262B1 (ko) * | 2017-01-20 | 2020-06-10 | 도판 인사츠 가부시키가이샤 | 표시 장치 및 표시 장치 기판 |
-
2004
- 2004-09-08 JP JP2004261474A patent/JP2006080234A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006080234A5 (enExample) | ||
| JP2006156608A5 (enExample) | ||
| JP2020505770A5 (enExample) | ||
| JP2008205119A5 (enExample) | ||
| TW200921720A (en) | Spiral inductor | |
| JP2015523145A5 (enExample) | ||
| JP2005525000A5 (enExample) | ||
| TWI224854B (en) | Semiconductor integrated circuit and method of manufacturing the same | |
| TWI513378B (zh) | 改善窄銅填孔之導電性的方法及結構 | |
| TW200418124A (en) | Interconnection structure | |
| JP2009044154A5 (enExample) | ||
| TWI321347B (en) | Aluminum base conductor for via fill interconnect and applications thereof | |
| WO2006098820A3 (en) | Method of forming a semiconductor device having a diffusion barrier stack and structure thereof | |
| JP2009147263A5 (enExample) | ||
| CN109637977B (zh) | 铜填充的凹槽结构及其制造方法 | |
| US11552018B2 (en) | Chemical direct pattern plating method | |
| JP2008047843A5 (enExample) | ||
| JP2005159326A5 (enExample) | ||
| KR100924865B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
| JP2010245263A5 (enExample) | ||
| JP4965443B2 (ja) | 半導体装置の製造方法 | |
| JP2007294514A5 (enExample) | ||
| JP2008124339A5 (enExample) | ||
| TWI322471B (en) | A semiconductor device having a second level of metallization formed over a first level with minimal damage to the first level and method | |
| JP2009094403A5 (enExample) |