JP2006080234A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

Info

Publication number
JP2006080234A
JP2006080234A JP2004261474A JP2004261474A JP2006080234A JP 2006080234 A JP2006080234 A JP 2006080234A JP 2004261474 A JP2004261474 A JP 2004261474A JP 2004261474 A JP2004261474 A JP 2004261474A JP 2006080234 A JP2006080234 A JP 2006080234A
Authority
JP
Japan
Prior art keywords
wiring
layer
semiconductor device
alloy
additive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004261474A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006080234A5 (enExample
Inventor
Kenichi Mori
健壹 森
Kazuyoshi Maekawa
和義 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004261474A priority Critical patent/JP2006080234A/ja
Publication of JP2006080234A publication Critical patent/JP2006080234A/ja
Publication of JP2006080234A5 publication Critical patent/JP2006080234A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004261474A 2004-09-08 2004-09-08 半導体装置およびその製造方法 Pending JP2006080234A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004261474A JP2006080234A (ja) 2004-09-08 2004-09-08 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004261474A JP2006080234A (ja) 2004-09-08 2004-09-08 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2006080234A true JP2006080234A (ja) 2006-03-23
JP2006080234A5 JP2006080234A5 (enExample) 2007-10-04

Family

ID=36159457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004261474A Pending JP2006080234A (ja) 2004-09-08 2004-09-08 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2006080234A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141315A (ja) * 2007-11-14 2009-06-25 Fujitsu Ltd 半導体装置およびその製造方法
WO2009153834A1 (ja) * 2008-06-18 2009-12-23 富士通株式会社 半導体装置とその製造方法
JP2010010250A (ja) * 2008-06-25 2010-01-14 Fujitsu Microelectronics Ltd 半導体装置およびその製造方法
WO2010004998A1 (ja) * 2008-07-11 2010-01-14 東京エレクトロン株式会社 成膜方法及び処理システム
JP2010087094A (ja) * 2008-09-30 2010-04-15 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
US7875976B2 (en) 2006-10-05 2011-01-25 Kabushiki Kaisha Toshiba Semiconductor device including a silicide layer and a dielectric layer
US8003527B2 (en) 2009-08-06 2011-08-23 Fujitsu Semiconductor Limited Manufacturing method of semiconductor device
JP2013243408A (ja) * 2007-06-12 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置及び配線
US9559058B2 (en) 2007-11-14 2017-01-31 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
JP6350754B1 (ja) * 2017-01-20 2018-07-04 凸版印刷株式会社 表示装置及び表示装置基板

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7875976B2 (en) 2006-10-05 2011-01-25 Kabushiki Kaisha Toshiba Semiconductor device including a silicide layer and a dielectric layer
JP2013243408A (ja) * 2007-06-12 2013-12-05 Semiconductor Energy Lab Co Ltd 半導体装置及び配線
US9935363B2 (en) 2007-06-12 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009141315A (ja) * 2007-11-14 2009-06-25 Fujitsu Ltd 半導体装置およびその製造方法
US9559058B2 (en) 2007-11-14 2017-01-31 Fujitsu Semiconductor Limited Semiconductor device and method for manufacturing the same
WO2009153834A1 (ja) * 2008-06-18 2009-12-23 富士通株式会社 半導体装置とその製造方法
US8836122B2 (en) 2008-06-18 2014-09-16 Fujitsu Limited Semiconductor device having copper wiring with increased migration resistance
JP5310721B2 (ja) * 2008-06-18 2013-10-09 富士通株式会社 半導体装置とその製造方法
JP2010010250A (ja) * 2008-06-25 2010-01-14 Fujitsu Microelectronics Ltd 半導体装置およびその製造方法
WO2010004998A1 (ja) * 2008-07-11 2010-01-14 東京エレクトロン株式会社 成膜方法及び処理システム
US8440563B2 (en) 2008-07-11 2013-05-14 Tokyo Electron Limited Film forming method and processing system
JP2010087094A (ja) * 2008-09-30 2010-04-15 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
US8003527B2 (en) 2009-08-06 2011-08-23 Fujitsu Semiconductor Limited Manufacturing method of semiconductor device
JP6350754B1 (ja) * 2017-01-20 2018-07-04 凸版印刷株式会社 表示装置及び表示装置基板

Similar Documents

Publication Publication Date Title
US7892976B2 (en) Semiconductor device and method for manufacturing the same
US7651943B2 (en) Forming diffusion barriers by annealing copper alloy layers
US7417321B2 (en) Via structure and process for forming the same
JP2009510771A (ja) 導電性キャッピング層を含む銅ベースのメタライゼーション層を形成する技術
JP2014534609A (ja) 金属相互接続構造体およびそれを形成する方法（銅相互接続構造体における微細構造変更）
JP2005203476A (ja) 半導体装置の配線構造及びその製造方法
TW200805563A (en) Process for producing semiconductor integrated circuit device
KR101581050B1 (ko) 무정형 탄탈륨 이리듐 확산 장벽을 갖는 구리 인터커넥트 구조
US7074709B2 (en) Localized doping and/or alloying of metallization for increased interconnect performance
US20050070090A1 (en) Method of forming metal pattern using selective electroplating process
US7659198B2 (en) In-situ deposition for Cu hillock suppression
JP2006080234A (ja) 半導体装置およびその製造方法
US20060024962A1 (en) Partial plate anneal plate process for deposition of conductive fill material
EP1753020A1 (en) Semiconductor device and method for fabricating the same
JP2006049641A (ja) 半導体装置およびその製造方法
JP2008060243A (ja) 半導体装置およびその製造方法
JP2000150522A (ja) 半導体装置の製造方法
JP5484691B2 (ja) 半導体装置の製造方法および半導体装置
JP5310721B2 (ja) 半導体装置とその製造方法
JP2009027048A (ja) 半導体装置の製造方法
JP2012039019A (ja) 半導体装置およびその製造方法
JP2006073635A (ja) 半導体装置およびその製造方法
CN109216265B (zh) 一种形成金属扩散阻挡层的方法
JP5326386B2 (ja) 半導体装置およびその製造方法
JP2004273700A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Effective date: 20070816

Free format text: JAPANESE INTERMEDIATE CODE: A523

A621 Written request for application examination

Effective date: 20070816

Free format text: JAPANESE INTERMEDIATE CODE: A621

A131 Notification of reasons for refusal

Effective date: 20090804

Free format text: JAPANESE INTERMEDIATE CODE: A131

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090806

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100105