JP2006041544A5 - - Google Patents
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- Publication number
- JP2006041544A5 JP2006041544A5 JP2005229385A JP2005229385A JP2006041544A5 JP 2006041544 A5 JP2006041544 A5 JP 2006041544A5 JP 2005229385 A JP2005229385 A JP 2005229385A JP 2005229385 A JP2005229385 A JP 2005229385A JP 2006041544 A5 JP2006041544 A5 JP 2006041544A5
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- container
- processed
- single crystal
- heating chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000010438 heat treatment Methods 0.000 claims description 92
- 239000007789 gas Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 9
- 229910003465 moissanite Inorganic materials 0.000 description 81
- 229910010271 silicon carbide Inorganic materials 0.000 description 81
- 239000000758 substrate Substances 0.000 description 43
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 10
- 238000000859 sublimation Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atoms Chemical group C* 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 125000004429 atoms Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003028 elevating Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 210000001736 Capillaries Anatomy 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910013379 TaC Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005229385A JP4418879B2 (ja) | 2003-03-10 | 2005-08-08 | 熱処理装置及び熱処理方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003063271 | 2003-03-10 | ||
| JP2005229385A JP4418879B2 (ja) | 2003-03-10 | 2005-08-08 | 熱処理装置及び熱処理方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003333266A Division JP3741283B2 (ja) | 2003-03-10 | 2003-09-25 | 熱処理装置及びそれを用いた熱処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006041544A JP2006041544A (ja) | 2006-02-09 |
| JP2006041544A5 true JP2006041544A5 (zh) | 2006-03-23 |
| JP4418879B2 JP4418879B2 (ja) | 2010-02-24 |
Family
ID=35906112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005229385A Expired - Lifetime JP4418879B2 (ja) | 2003-03-10 | 2005-08-08 | 熱処理装置及び熱処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4418879B2 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5251015B2 (ja) * | 2007-06-27 | 2013-07-31 | 学校法人関西学院 | 熱処理装置及び熱処理方法 |
| JP2017071519A (ja) * | 2015-10-06 | 2017-04-13 | 東洋炭素株式会社 | 液相エピタキシャル成長方法及びそれに用いる坩堝 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4770630A (en) * | 1986-08-23 | 1988-09-13 | Toray Industries, Inc. | Heat treatment apparatus |
| JP2744934B2 (ja) * | 1989-07-25 | 1998-04-28 | 東京エレクトロン株式会社 | 縦型処理装置 |
| JP2759368B2 (ja) * | 1990-01-23 | 1998-05-28 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
| JPH0715352B2 (ja) * | 1990-06-30 | 1995-02-22 | 助川電気工業株式会社 | 真空加熱装置 |
| JPH0573936U (ja) * | 1992-03-12 | 1993-10-08 | 国際電気株式会社 | 枚葉式ｃｖｄ装置 |
| JP3466673B2 (ja) * | 1993-09-24 | 2003-11-17 | 東海高熱工業株式会社 | 可動熱反射板付真空炉 |
| JPH09263498A (ja) * | 1996-03-29 | 1997-10-07 | Denso Corp | 炭化珪素単結晶の製造方法 |
| JP3296998B2 (ja) * | 1997-05-23 | 2002-07-02 | 日本ピラー工業株式会社 | 単結晶ＳｉＣおよびその製造方法 |
| JP3794816B2 (ja) * | 1998-03-09 | 2006-07-12 | 株式会社アルバック | 真空熱処理方法 |
| JP2936479B1 (ja) * | 1998-08-06 | 1999-08-23 | 日本ピラー工業株式会社 | 単結晶ＳｉＣの育成方法及びその装置 |
| JP4228444B2 (ja) * | 1998-12-25 | 2009-02-25 | 住友電気工業株式会社 | 炭化珪素系複合材料およびその製造方法 |
| JP3551106B2 (ja) * | 1999-11-04 | 2004-08-04 | 日新電機株式会社 | 単結晶ＳｉＣの製造方法 |
| JP4224908B2 (ja) * | 1999-11-29 | 2009-02-18 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
| US6488778B1 (en) * | 2000-03-16 | 2002-12-03 | International Business Machines Corporation | Apparatus and method for controlling wafer environment between thermal clean and thermal processing |
| JP3541789B2 (ja) * | 2000-07-31 | 2004-07-14 | 日新電機株式会社 | 単結晶ＳｉＣの育成方法 |
| JP2002261148A (ja) * | 2001-03-05 | 2002-09-13 | Tokyo Electron Ltd | 処理システム及び被処理体の予熱方法 |
| WO2002099169A1 (fr) * | 2001-06-04 | 2002-12-12 | The New Industry Research Organization | Carbure de silicium monocristal et son procede de production |
-
2005
- 2005-08-08 JP JP2005229385A patent/JP4418879B2/ja not_active Expired - Lifetime
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