JP2006041458A5 - - Google Patents
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- Publication number
- JP2006041458A5 JP2006041458A5 JP2004299311A JP2004299311A JP2006041458A5 JP 2006041458 A5 JP2006041458 A5 JP 2006041458A5 JP 2004299311 A JP2004299311 A JP 2004299311A JP 2004299311 A JP2004299311 A JP 2004299311A JP 2006041458 A5 JP2006041458 A5 JP 2006041458A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- substrate
- thin film
- film layer
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 24
- 229910052744 lithium Inorganic materials 0.000 claims 7
- 239000000155 melt Substances 0.000 claims 7
- 229910052708 sodium Inorganic materials 0.000 claims 7
- 239000012535 impurity Substances 0.000 claims 6
- 229910052783 alkali metal Inorganic materials 0.000 claims 4
- 150000001340 alkali metals Chemical class 0.000 claims 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052791 calcium Inorganic materials 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052792 caesium Inorganic materials 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 230000004907 flux Effects 0.000 claims 1
- 229910052730 francium Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 229910052701 rubidium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004299311A JP4824920B2 (ja) | 2003-10-20 | 2004-10-13 | Ｉｉｉ族元素窒化物結晶半導体デバイス |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003359709 | 2003-10-20 | ||
| JP2003359709 | 2003-10-20 | ||
| JP2004188478 | 2004-06-25 | ||
| JP2004188478 | 2004-06-25 | ||
| JP2004299311A JP4824920B2 (ja) | 2003-10-20 | 2004-10-13 | Ｉｉｉ族元素窒化物結晶半導体デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006041458A JP2006041458A (ja) | 2006-02-09 |
| JP2006041458A5 true JP2006041458A5 (enrdf_load_stackoverflow) | 2007-11-15 |
| JP4824920B2 JP4824920B2 (ja) | 2011-11-30 |
Family
ID=35906086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004299311A Expired - Fee Related JP4824920B2 (ja) | 2003-10-20 | 2004-10-13 | Ｉｉｉ族元素窒化物結晶半導体デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4824920B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4932305B2 (ja) * | 2006-03-30 | 2012-05-16 | 株式会社豊田中央研究所 | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 |
| JP2007277055A (ja) * | 2006-04-07 | 2007-10-25 | Toyoda Gosei Co Ltd | 半導体結晶の製造方法および半導体基板 |
| JP4915563B2 (ja) * | 2006-09-13 | 2012-04-11 | パナソニック株式会社 | 窒化ガリウム系単結晶の育成方法およびそれにより得られる窒化ガリウム系単結晶 |
| US7708833B2 (en) | 2007-03-13 | 2010-05-04 | Toyoda Gosei Co., Ltd. | Crystal growing apparatus |
| JP4926996B2 (ja) * | 2007-03-13 | 2012-05-09 | 豊田合成株式会社 | 結晶成長装置 |
| JP2009029672A (ja) * | 2007-07-27 | 2009-02-12 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶およびその成長方法 |
| US7892513B2 (en) * | 2009-01-26 | 2011-02-22 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal and method of its growth |
| JP5564842B2 (ja) | 2009-07-10 | 2014-08-06 | サンケン電気株式会社 | 半導体装置 |
| JP5903818B2 (ja) * | 2011-09-26 | 2016-04-13 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593920A (ja) * | 1982-06-29 | 1984-01-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3771333B2 (ja) * | 1996-10-30 | 2006-04-26 | 日本オプネクスト株式会社 | 半導体レーザ素子及びその製造方法 |
| JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜 |
| JP2001148543A (ja) * | 1999-11-19 | 2001-05-29 | Sony Corp | Ｉｉｉ族窒化物半導体の製造方法および半導体装置の製造方法 |
| JP4749583B2 (ja) * | 2001-03-30 | 2011-08-17 | 豊田合成株式会社 | 半導体基板の製造方法 |
| JP4048476B2 (ja) * | 2001-05-22 | 2008-02-20 | 株式会社リコー | 観察機能付ｉｉｉ族窒化物結晶製造装置および窒化物結晶製造方法 |
-
2004
- 2004-10-13 JP JP2004299311A patent/JP4824920B2/ja not_active Expired - Fee Related
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