JP2005534192A - 光学的測定のためのモデルとパラメータの選択 - Google Patents

光学的測定のためのモデルとパラメータの選択 Download PDF

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JP2005534192A
JP2005534192A JP2004526155A JP2004526155A JP2005534192A JP 2005534192 A JP2005534192 A JP 2005534192A JP 2004526155 A JP2004526155 A JP 2004526155A JP 2004526155 A JP2004526155 A JP 2004526155A JP 2005534192 A JP2005534192 A JP 2005534192A
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parameter
optimization
profile
model
profile model
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JP2005534192A5 (enExample
Inventor
ボウン，ビ
ドレジ，エマニュエル
バオ，ジュンウェイ
ドディ，スリニバス
ニウ，シンフイ
ジャカトダル，ニックヒル
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ティンバー テクノロジーズ，インコーポレイティド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2004526155A 2002-07-25 2003-07-25 光学的測定のためのモデルとパラメータの選択 Withdrawn JP2005534192A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/206,491 US7330279B2 (en) 2002-07-25 2002-07-25 Model and parameter selection for optical metrology
PCT/US2003/023281 WO2004013723A2 (en) 2002-07-25 2003-07-25 Model and parameter selection for optical metrology

Related Child Applications (1)

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JP2011184641A Division JP5307862B2 (ja) 2002-07-25 2011-08-26 光学的測定のためのモデルとパラメータの選択

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JP2005534192A true JP2005534192A (ja) 2005-11-10
JP2005534192A5 JP2005534192A5 (enExample) 2006-09-14

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JP2004526155A Withdrawn JP2005534192A (ja) 2002-07-25 2003-07-25 光学的測定のためのモデルとパラメータの選択
JP2011184641A Expired - Lifetime JP5307862B2 (ja) 2002-07-25 2011-08-26 光学的測定のためのモデルとパラメータの選択

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US (2) US7330279B2 (enExample)
JP (2) JP2005534192A (enExample)
KR (1) KR101281212B1 (enExample)
CN (1) CN1310011C (enExample)
AU (1) AU2003254170A1 (enExample)
DE (1) DE10392975T5 (enExample)
TW (1) TWI238884B (enExample)
WO (1) WO2004013723A2 (enExample)

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JP2009145323A (ja) * 2007-10-09 2009-07-02 Asml Netherlands Bv モデルを最適化する方法、特性を測定する方法、デバイス製造方法、分光計及びリソグラフィ装置
JP2009532869A (ja) * 2006-03-30 2009-09-10 東京エレクトロン株式会社 光計測を用いたウエハ上に形成された損傷構造の測定
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JP2013539532A (ja) * 2010-07-22 2013-10-24 ケーエルエー−テンカー コーポレイション 最適にパラメータ化されたスキャッタロメトリモデルを自動決定するための方法
KR101342847B1 (ko) 2006-03-24 2013-12-17 팀버 테크놀로지스, 인코포레이티드 2 차원 구조물들에 대한 회절 차수의 선택 방법, 광학 계측 시스템의 최적화 방법 및 광학 계측 시스템
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JP2021509772A (ja) * 2018-01-05 2021-04-01 ケーエルエー コーポレイション 電子顕微鏡を使用した半導体計測および欠陥分類
JP2021143959A (ja) * 2020-03-12 2021-09-24 キオクシア株式会社 形状算出プログラム、形状算出方法、及び形状算出装置
JP2024509784A (ja) * 2021-02-25 2024-03-05 トルンプフ レーザー ゲゼルシャフト ミット ベシュレンクテル ハフツング 測定を実行するための最適化されたパラメータセットを特定するための方法および装置

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US20040017574A1 (en) 2004-01-29
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