CN1310011C - 光计量术中模型和参数的选择 - Google Patents

光计量术中模型和参数的选择 Download PDF

Info

Publication number
CN1310011C
CN1310011C CNB038177781A CN03817778A CN1310011C CN 1310011 C CN1310011 C CN 1310011C CN B038177781 A CNB038177781 A CN B038177781A CN 03817778 A CN03817778 A CN 03817778A CN 1310011 C CN1310011 C CN 1310011C
Authority
CN
China
Prior art keywords
parameters optimization
skeleton pattern
optimization
parameter
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB038177781A
Other languages
English (en)
Chinese (zh)
Other versions
CN1672012A (zh
Inventor
维·沃恩格
伊玛纽尔·德里格
鲍君威
斯利尼瓦斯·多迪
牛新辉
尼克希尔·加卡特达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tel Sound Quality Technology
Tokyo Yili Kechuang Co In United States
Original Assignee
TEL Timbre Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Timbre Technologies Inc filed Critical TEL Timbre Technologies Inc
Publication of CN1672012A publication Critical patent/CN1672012A/zh
Application granted granted Critical
Publication of CN1310011C publication Critical patent/CN1310011C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CNB038177781A 2002-07-25 2003-07-25 光计量术中模型和参数的选择 Expired - Lifetime CN1310011C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/206,491 2002-07-25
US10/206,491 US7330279B2 (en) 2002-07-25 2002-07-25 Model and parameter selection for optical metrology

Publications (2)

Publication Number Publication Date
CN1672012A CN1672012A (zh) 2005-09-21
CN1310011C true CN1310011C (zh) 2007-04-11

Family

ID=30770300

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038177781A Expired - Lifetime CN1310011C (zh) 2002-07-25 2003-07-25 光计量术中模型和参数的选择

Country Status (8)

Country Link
US (2) US7330279B2 (enExample)
JP (2) JP2005534192A (enExample)
KR (1) KR101281212B1 (enExample)
CN (1) CN1310011C (enExample)
AU (1) AU2003254170A1 (enExample)
DE (1) DE10392975T5 (enExample)
TW (1) TWI238884B (enExample)
WO (1) WO2004013723A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105571484A (zh) * 2014-10-14 2016-05-11 睿励科学仪器（上海）有限公司 确定测量模式和光学系统参数容差的方法和装置

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US20040087042A1 (en) * 2002-08-12 2004-05-06 Bruno Ghyselen Method and apparatus for adjusting the thickness of a layer of semiconductor material
US6842261B2 (en) * 2002-08-26 2005-01-11 Timbre Technologies, Inc. Integrated circuit profile value determination
US20040090629A1 (en) * 2002-11-08 2004-05-13 Emmanuel Drege Diffraction order selection for optical metrology simulation
US6867862B2 (en) * 2002-11-20 2005-03-15 Mehrdad Nikoonahad System and method for characterizing three-dimensional structures
US20040181768A1 (en) * 2003-03-12 2004-09-16 Krukar Richard H. Model pattern simulation of semiconductor wafer processing steps
US7394554B2 (en) * 2003-09-15 2008-07-01 Timbre Technologies, Inc. Selecting a hypothetical profile to use in optical metrology
US20050231731A1 (en) * 2004-02-18 2005-10-20 The Usa As Represented By The Administrator Of The National Aeronautics And Space Administration Systems and methods for fabricating thin films
US7523076B2 (en) * 2004-03-01 2009-04-21 Tokyo Electron Limited Selecting a profile model for use in optical metrology using a machine learning system
FR2867588B1 (fr) * 2004-03-12 2006-04-28 Commissariat Energie Atomique Procede de caracterisation geometrique de structures et dispositif pour la mise en oeuvre dudit procede
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
US7065423B2 (en) * 2004-07-08 2006-06-20 Timbre Technologies, Inc. Optical metrology model optimization for process control
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7566181B2 (en) * 2004-09-01 2009-07-28 Tokyo Electron Limited Controlling critical dimensions of structures formed on a wafer in semiconductor processing
US7171284B2 (en) 2004-09-21 2007-01-30 Timbre Technologies, Inc. Optical metrology model optimization based on goals
US7280229B2 (en) * 2004-12-03 2007-10-09 Timbre Technologies, Inc. Examining a structure formed on a semiconductor wafer using machine learning systems
US7483133B2 (en) * 2004-12-09 2009-01-27 Kla-Tencor Technologies Corporation. Multiple angle of incidence spectroscopic scatterometer system
US20070091325A1 (en) * 2005-01-07 2007-04-26 Mehrdad Nikoonahad Multi-channel optical metrology
US20060187466A1 (en) * 2005-02-18 2006-08-24 Timbre Technologies, Inc. Selecting unit cell configuration for repeating structures in optical metrology
US7421414B2 (en) * 2005-03-31 2008-09-02 Timbre Technologies, Inc. Split machine learning systems
US7496865B2 (en) * 2005-05-20 2009-02-24 Chung Yuan Christian University OTA-based high-order filters
US7649614B2 (en) * 2005-06-10 2010-01-19 Asml Netherlands B.V. Method of characterization, method of characterizing a process operation, and device manufacturing method
US7355728B2 (en) * 2005-06-16 2008-04-08 Timbre Technologies, Inc. Optical metrology model optimization for repetitive structures
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
US7523021B2 (en) * 2006-03-08 2009-04-21 Tokyo Electron Limited Weighting function to enhance measured diffraction signals in optical metrology
US7428060B2 (en) 2006-03-24 2008-09-23 Timbre Technologies, Inc. Optimization of diffraction order selection for two-dimensional structures
US7623978B2 (en) * 2006-03-30 2009-11-24 Tokyo Electron Limited Damage assessment of a wafer using optical metrology
US7619731B2 (en) * 2006-03-30 2009-11-17 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7576851B2 (en) * 2006-03-30 2009-08-18 Tokyo Electron Limited Creating a library for measuring a damaged structure formed on a wafer using optical metrology
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US7444196B2 (en) * 2006-04-21 2008-10-28 Timbre Technologies, Inc. Optimized characterization of wafers structures for optical metrology
US7818151B2 (en) * 2006-05-02 2010-10-19 Asml Masktools B.V. Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool
US7495781B2 (en) * 2006-07-10 2009-02-24 Tokyo Electron Limited Optimizing selected variables of an optical metrology model
US7525673B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Optimizing selected variables of an optical metrology system
US7526354B2 (en) * 2006-07-10 2009-04-28 Tokyo Electron Limited Managing and using metrology data for process and equipment control
US7469192B2 (en) * 2006-07-11 2008-12-23 Tokyo Electron Ltd. Parallel profile determination for an optical metrology system
US7515283B2 (en) * 2006-07-11 2009-04-07 Tokyo Electron, Ltd. Parallel profile determination in optical metrology
US7742888B2 (en) * 2006-07-25 2010-06-22 Tokyo Electron Limited Allocating processing units to generate simulated diffraction signals used in optical metrology
US7765076B2 (en) * 2006-09-22 2010-07-27 Tokyo Electron Limited Allocating processing units to processing clusters to generate simulated diffraction signals
US7763404B2 (en) * 2006-09-26 2010-07-27 Tokyo Electron Limited Methods and apparatus for changing the optical properties of resists
US20080074677A1 (en) * 2006-09-26 2008-03-27 Tokyo Electron Limited accuracy of optical metrology measurements
US20080074678A1 (en) * 2006-09-26 2008-03-27 Tokyo Electron Limited Accuracy of optical metrology measurements
US7300730B1 (en) 2006-09-26 2007-11-27 Tokyo Electron Limited Creating an optically tunable anti-reflective coating
US7555395B2 (en) * 2006-09-26 2009-06-30 Tokyo Electron Limited Methods and apparatus for using an optically tunable soft mask to create a profile library
US20080076046A1 (en) * 2006-09-26 2008-03-27 Tokyo Electron Limited accuracy of optical metrology measurements
US7749398B2 (en) * 2006-09-29 2010-07-06 Tokyo Electron Limited Selective-redeposition sources for calibrating a plasma process
US7776748B2 (en) * 2006-09-29 2010-08-17 Tokyo Electron Limited Selective-redeposition structures for calibrating a plasma process
US8045786B2 (en) * 2006-10-24 2011-10-25 Kla-Tencor Technologies Corp. Waferless recipe optimization
US7522295B2 (en) * 2006-11-07 2009-04-21 Tokyo Electron Limited Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer
US7417750B2 (en) * 2006-11-07 2008-08-26 Tokyo Electron Limited Consecutive measurement of structures formed on a semiconductor wafer using an angle-resolved spectroscopic scatterometer
US8798966B1 (en) * 2007-01-03 2014-08-05 Kla-Tencor Corporation Measuring critical dimensions of a semiconductor structure
US7916927B2 (en) * 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7451054B2 (en) * 2007-01-30 2008-11-11 Tokyo Electron Limited Method of using a wafer-temperature-dependent profile library
US7571074B2 (en) * 2007-01-30 2009-08-04 Tokyo Electron Limited Method of using a wafer-thickness-dependant profile library
US7639351B2 (en) * 2007-03-20 2009-12-29 Tokyo Electron Limited Automated process control using optical metrology with a photonic nanojet
US7949618B2 (en) * 2007-03-28 2011-05-24 Tokyo Electron Limited Training a machine learning system to determine photoresist parameters
US7567353B2 (en) * 2007-03-28 2009-07-28 Tokyo Electron Limited Automated process control using optical metrology and photoresist parameters
US7372583B1 (en) * 2007-04-12 2008-05-13 Tokyo Electron Limited Controlling a fabrication tool using support vector machine
US7483809B2 (en) * 2007-04-12 2009-01-27 Tokyo Electron Limited Optical metrology using support vector machine with profile parameter inputs
US7511835B2 (en) * 2007-04-12 2009-03-31 Tokyo Electron Limited Optical metrology using a support vector machine with simulated diffraction signal inputs
KR101437583B1 (ko) * 2007-07-03 2014-09-12 삼성전자주식회사 리소그라피 장치 및 리소그라피 방법
KR101461667B1 (ko) * 2007-07-26 2014-11-13 도쿄엘렉트론가부시키가이샤 패턴화 구조 검사 장치 및 계측 데이터 관리 방법
KR101357326B1 (ko) * 2007-07-26 2014-02-03 도쿄엘렉트론가부시키가이샤 패턴화 구조 검사 시스템
CN101359612B (zh) * 2007-07-30 2012-07-04 东京毅力科创株式会社 晶片图案结构的检查装置及其计量数据管理方法
US7729873B2 (en) * 2007-08-28 2010-06-01 Tokyo Electron Limited Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology
US7949490B2 (en) * 2007-08-30 2011-05-24 Tokyo Electron Limited Determining profile parameters of a structure using approximation and fine diffraction models in optical metrology
US7627392B2 (en) * 2007-08-30 2009-12-01 Tokyo Electron Limited Automated process control using parameters determined with approximation and fine diffraction models
US8069020B2 (en) * 2007-09-19 2011-11-29 Tokyo Electron Limited Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
US7912679B2 (en) * 2007-09-20 2011-03-22 Tokyo Electron Limited Determining profile parameters of a structure formed on a semiconductor wafer using a dispersion function relating process parameter to dispersion
NL1036018A1 (nl) * 2007-10-09 2009-04-15 Asml Netherlands Bv A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus.
JP2009129390A (ja) * 2007-11-28 2009-06-11 Oki Electric Ind Co Ltd 媒体鑑別装置
US8760649B1 (en) * 2008-01-28 2014-06-24 Kla-Tencor Corporation Model-based metrology using tesselation-based discretization
MX2010011563A (es) * 2008-04-22 2010-11-12 Schering Corp Compuestos 2-imino-3-metil pirrolo pirimidinona fenil-sustituidos como inhibidores de enzima de escision de proteina precursora amiloide sitio beta-1, composiciones y su uso.
US8090558B1 (en) 2008-06-09 2012-01-03 Kla-Tencor Corporation Optical parametric model optimization
US8612045B2 (en) * 2008-12-24 2013-12-17 Asml Holding N.V. Optimization method and a lithographic cell
US8024676B2 (en) * 2009-02-13 2011-09-20 Tokyo Electron Limited Multi-pitch scatterometry targets
US8183062B2 (en) * 2009-02-24 2012-05-22 Tokyo Electron Limited Creating metal gate structures using Lithography-Etch-Lithography-Etch (LELE) processing sequences
NL2005523A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Selection of optimum patterns in a design layout based on diffraction signature analysis.
US9523800B2 (en) * 2010-05-21 2016-12-20 Kla-Tencor Corporation Computation efficiency by iterative spatial harmonics order truncation
NL2006700A (en) 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
US20140079312A9 (en) * 2010-06-17 2014-03-20 Nova Measuring Instruments Ltd. Method and system for optimizing optical inspection of patterned structures
US8666703B2 (en) 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
NL2007577A (en) 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization of source, mask and projection optics.
US20130110477A1 (en) * 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology
JP5938201B2 (ja) * 2011-12-06 2016-06-22 キヤノン株式会社 位置姿勢計測装置、その処理方法及びプログラム
JP5660026B2 (ja) * 2011-12-28 2015-01-28 信越半導体株式会社 膜厚分布測定方法
US10354929B2 (en) 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
JP6049052B2 (ja) * 2012-07-20 2016-12-21 株式会社日立ハイテクノロジーズ ウエハ外観検査装置及びウエハ外観検査装置における感度しきい値設定方法
CN103811379B (zh) * 2012-11-01 2016-12-28 台湾积体电路制造股份有限公司 工具优化调节系统和相关方法
US10769320B2 (en) * 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9519285B2 (en) 2013-01-23 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and associated methods for tuning processing tools
EP2888566A1 (en) 2013-05-07 2015-07-01 Halliburton Energy Services, Inc. Optical sensor optimization and system implementation with simplified layer structure
US9518932B2 (en) * 2013-11-06 2016-12-13 Kla-Tencor Corp. Metrology optimized inspection
JP6509225B2 (ja) * 2013-12-11 2019-05-08 ケーエルエー−テンカー コーポレイション 要件に対するターゲット及びプロセス感度の分析
US10671923B2 (en) 2013-12-20 2020-06-02 Gemtrex Inc. Genetic method for the tracking of time varying signals
US10331818B2 (en) 2014-07-11 2019-06-25 Hitachi, Ltd. Simulation system and simulation method
CN105571483B (zh) * 2014-10-14 2018-06-26 睿励科学仪器（上海）有限公司 一种用于优化光学系统参数的方法和装置
JP6770958B2 (ja) * 2014-11-25 2020-10-21 ケーエルエー コーポレイション ランドスケープの解析および利用
US9948920B2 (en) * 2015-02-27 2018-04-17 Qualcomm Incorporated Systems and methods for error correction in structured light
CN107532290B (zh) * 2015-03-31 2022-04-01 布勒阿尔策瑙股份有限公司 用于生产涂覆的基板的方法
CN108292106B (zh) 2015-10-09 2021-05-25 Asml荷兰有限公司 用于检查及量测的方法和设备
DE102015221772A1 (de) * 2015-11-05 2017-05-11 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Charakterisierung eines durch wenigstens einen Lithographieschritt strukturierten Wafers
WO2017076702A2 (de) 2015-11-05 2017-05-11 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zur charakterisierung eines durch wenigstens einen lithographieschritt strukturierten wafers
CN107345788A (zh) * 2016-05-04 2017-11-14 中国科学院福建物质结构研究所 一种平行光微光斑光学关键尺寸分析装置及检测方法
US10146036B2 (en) 2016-06-07 2018-12-04 Globalfoundries Inc. Semiconductor wafer inspection using care area group-specific threshold settings for detecting defects
US10458912B2 (en) * 2016-08-31 2019-10-29 Kla-Tencor Corporation Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
KR101885619B1 (ko) * 2016-12-29 2018-08-06 한국과학기술원 출구 재귀 모델을 이용한 웨이퍼 제조 공정 레벨의 포토리소그래피 클러스터 장치 시뮬레이션을 제공하는 시뮬레이션 장치 및 이를 이용한 시뮬레이션 방법
US10580673B2 (en) * 2018-01-05 2020-03-03 Kla Corporation Semiconductor metrology and defect classification using electron microscopy
US11562289B2 (en) * 2018-12-06 2023-01-24 Kla Corporation Loosely-coupled inspection and metrology system for high-volume production process monitoring
US11480868B2 (en) 2019-03-22 2022-10-25 International Business Machines Corporation Determination of optical roughness in EUV structures
KR102784326B1 (ko) * 2020-03-06 2025-03-19 에이에스엠엘 네델란즈 비.브이. 리소그래피 시스템과 같은 시스템의 예측 유지 보수를 수행하기 위하여 시스템을 모델링하는 방법
JP7475905B2 (ja) * 2020-03-12 2024-04-30 キオクシア株式会社 形状算出プログラム、形状算出方法、及び形状算出装置
US12406197B2 (en) * 2020-10-28 2025-09-02 Kla Corporation Prediction and metrology of stochastic photoresist thickness defects
DE102021201806A1 (de) * 2021-02-25 2022-09-08 Trumpf Laser Gmbh Verfahren und Vorrichtung zum Bestimmen eines optimierten Parametersatzes zum Durchführen einer Messung
US20220352041A1 (en) * 2021-04-30 2022-11-03 Kla Corporation High Resolution Profile Measurement Based On A Trained Parameter Conditioned Measurement Model
KR20220166584A (ko) 2021-06-10 2022-12-19 삼성전자주식회사 공정 변화도를 모니터링 하는 방법
JP7600046B2 (ja) 2021-07-13 2024-12-16 キオクシア株式会社 形状計測方法、形状計測装置、及びプログラム
US20230169255A1 (en) * 2021-12-01 2023-06-01 Kla Corporation Methods And Systems For Data Driven Parameterization And Measurement Of Semiconductor Structures
US12507091B2 (en) * 2022-11-14 2025-12-23 Rakuten Symphony, Inc. Testing in 5G SA communication network

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326659A (en) * 1992-03-05 1994-07-05 Regents Of The University Of California Method for making masks
GB9226552D0 (en) * 1992-12-21 1993-02-17 Philips Electronics Uk Ltd A method of determining a given characteristic of a material sample
US5719796A (en) * 1995-12-04 1998-02-17 Advanced Micro Devices, Inc. System for monitoring and analyzing manufacturing processes using statistical simulation with single step feedback
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
JP3535390B2 (ja) * 1998-09-03 2004-06-07 株式会社東芝 露光マスクの検査方法および測長箇所を探索するプログラムを記録した記録媒体
US6532428B1 (en) * 1999-10-07 2003-03-11 Advanced Micro Devices, Inc. Method and apparatus for automatic calibration of critical dimension metrology tool
US6470230B1 (en) * 2000-01-04 2002-10-22 Advanced Micro Devices, Inc. Supervisory method for determining optimal process targets based on product performance in microelectronic fabrication
AU2001234575A1 (en) * 2000-01-26 2001-08-07 Timbre Technologies, Incorporated Caching of intra-layer calculations for rapid rigorous coupled-wave analyses
US6748104B1 (en) * 2000-03-24 2004-06-08 Cognex Corporation Methods and apparatus for machine vision inspection using single and multiple templates or patterns
US6622059B1 (en) * 2000-04-13 2003-09-16 Advanced Micro Devices, Inc. Automated process monitoring and analysis system for semiconductor processing
US6943900B2 (en) * 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US6768983B1 (en) * 2000-11-28 2004-07-27 Timbre Technologies, Inc. System and method for real-time library generation of grating profiles
US6636843B2 (en) * 2000-12-14 2003-10-21 Timbre Technologies, Inc. System and method for grating profile classification
US6900892B2 (en) * 2000-12-19 2005-05-31 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6704661B1 (en) * 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6785638B2 (en) * 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US6867866B1 (en) * 2001-08-10 2005-03-15 Therma-Wave, Inc. CD metrology analysis using green's function
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
US6954911B2 (en) * 2002-05-01 2005-10-11 Synopsys, Inc. Method and system for simulating resist and etch edges
US7216045B2 (en) * 2002-06-03 2007-05-08 Timbre Technologies, Inc. Selection of wavelengths for integrated circuit optical metrology
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7092110B2 (en) * 2002-07-25 2006-08-15 Timbre Technologies, Inc. Optimized model and parameter selection for optical metrology
US7427521B2 (en) * 2002-10-17 2008-09-23 Timbre Technologies, Inc. Generating simulated diffraction signals for two-dimensional structures
US20040267397A1 (en) * 2003-06-27 2004-12-30 Srinivas Doddi Optical metrology of structures formed on semiconductor wafer using machine learning systems
US7394554B2 (en) * 2003-09-15 2008-07-01 Timbre Technologies, Inc. Selecting a hypothetical profile to use in optical metrology
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
US7355728B2 (en) * 2005-06-16 2008-04-08 Timbre Technologies, Inc. Optical metrology model optimization for repetitive structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
US6130750A (en) * 1996-05-02 2000-10-10 International Business Machines Corporation Optical metrology tool and method of using same
US6317211B1 (en) * 1996-05-02 2001-11-13 International Business Machines Corporation Optical metrology tool and method of using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105571484A (zh) * 2014-10-14 2016-05-11 睿励科学仪器（上海）有限公司 确定测量模式和光学系统参数容差的方法和装置
CN105571484B (zh) * 2014-10-14 2018-07-06 睿励科学仪器（上海）有限公司 确定测量模式和光学系统参数容差的方法和装置

Also Published As

Publication number Publication date
US7505153B2 (en) 2009-03-17
TW200407527A (en) 2004-05-16
CN1672012A (zh) 2005-09-21
US20080151269A1 (en) 2008-06-26
US20040017574A1 (en) 2004-01-29
WO2004013723A2 (en) 2004-02-12
KR101281212B1 (ko) 2013-07-02
DE10392975T5 (de) 2006-01-19
US7330279B2 (en) 2008-02-12
JP2012027032A (ja) 2012-02-09
AU2003254170A1 (en) 2004-02-23
JP5307862B2 (ja) 2013-10-02
WO2004013723A3 (en) 2004-04-29
TWI238884B (en) 2005-09-01
KR20050021549A (ko) 2005-03-07
AU2003254170A8 (en) 2004-02-23
JP2005534192A (ja) 2005-11-10

Similar Documents

Publication Publication Date Title
CN1310011C (zh) 光计量术中模型和参数的选择
US7126700B2 (en) Parametric optimization of optical metrology model
US20040017575A1 (en) Optimized model and parameter selection for optical metrology
JP5876040B2 (ja) パターン化構造の光学検査を最適化するための方法およびシステム
US8250497B2 (en) Method for designing two-dimensional array overlay target sets and method and system for measuring overlay errors using the same
KR102073424B1 (ko) 패턴처리된 구조물의 측정 방법 및 시스템
US7532317B2 (en) Scatterometry method with characteristic signatures matching
JP2005534192A5 (enExample)
CN1646661A (zh) 用于集成电路量度的形态精确化
KR20130118755A (ko) 산란 측정 모델 매개 변수 확인 방법, 이를 수행하기 위한 데이터 처리 시스템 및 광 계측 시스템
TW200903686A (en) In-line lithography and etch system
US7145664B2 (en) Global shape definition method for scatterometry
KR101813314B1 (ko) 박막의 조성을 측정하기 위한 방법 및 시스템
CN115699279A (zh) 针对含样品内及样品间变异的样品使用无监督学习及适应性数据库产生方法的图像对准设置
WO2019064293A1 (en) METHOD AND SYSTEM OF METROLOGY
US20130282343A1 (en) Method and system for use in measuring in complex patterned structures
US7487053B2 (en) Refining a virtual profile library
CN103003681A (zh) 结构的光学计量的材料光学特性的确定
JP7539467B2 (ja) 計測ランドスケープに基づく計測最適化のためのシステムおよび方法
JP6012609B2 (ja) 臨界寸法均一性再構成のための広域標識方法
TWI744493B (zh) 控制系統
US20240353759A1 (en) Full Wafer Measurement Based On A Trained Full Wafer Measurement Model
KR20250021465A (ko) 라이브러리 구축 및 패턴 구조 측정에 사용하기 위한 시스템 및 그 방법
JP2004327810A (ja) 情報処理装置及びｌｓｉチップの製造方法
EP4200903A1 (en) Method of manufacturing a semiconductor device and process control system for a semiconductor manufacturing assembly

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: TOKYO YILI KECHUANG USA INC.

Free format text: FORMER OWNER: TEL TIMBRE TECHNOLOGY INC.

Effective date: 20140423

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee

Owner name: TEL TIMBRE TECHNOLOGY INC.

Free format text: FORMER NAME: TIMBRE TECHNOLOGIES, INC.

CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: TEL sound quality technology

Address before: California, USA

Patentee before: Timbre Technologies, Inc.

TR01 Transfer of patent right

Effective date of registration: 20140423

Address after: Texas, USA

Patentee after: Tokyo Yili Kechuang company in the United States

Address before: California, USA

Patentee before: TEL sound quality technology

CX01 Expiry of patent term

Granted publication date: 20070411

CX01 Expiry of patent term