KR101281212B1 - 광학 계측을 위한 모델 및 파라미터 선택 - Google Patents

광학 계측을 위한 모델 및 파라미터 선택 Download PDF

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Publication number
KR101281212B1
KR101281212B1 KR1020057001156A KR20057001156A KR101281212B1 KR 101281212 B1 KR101281212 B1 KR 101281212B1 KR 1020057001156 A KR1020057001156 A KR 1020057001156A KR 20057001156 A KR20057001156 A KR 20057001156A KR 101281212 B1 KR101281212 B1 KR 101281212B1
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parameters
optimization
profile
profile model
parameter
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Korean (ko)
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KR20050021549A (ko
Inventor
비 보웅
엠마뉴엘 드레지
쭌웨이 바오
스리니바스 두디
씬후이 니우
닉힐 자카트다르
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팀버 테크놀로지스, 인코포레이티드
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020057001156A 2002-07-25 2003-07-25 광학 계측을 위한 모델 및 파라미터 선택 Expired - Lifetime KR101281212B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/206,491 2002-07-25
US10/206,491 US7330279B2 (en) 2002-07-25 2002-07-25 Model and parameter selection for optical metrology
PCT/US2003/023281 WO2004013723A2 (en) 2002-07-25 2003-07-25 Model and parameter selection for optical metrology

Publications (2)

Publication Number Publication Date
KR20050021549A KR20050021549A (ko) 2005-03-07
KR101281212B1 true KR101281212B1 (ko) 2013-07-02

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KR1020057001156A Expired - Lifetime KR101281212B1 (ko) 2002-07-25 2003-07-25 광학 계측을 위한 모델 및 파라미터 선택

Country Status (8)

Country Link
US (2) US7330279B2 (enExample)
JP (2) JP2005534192A (enExample)
KR (1) KR101281212B1 (enExample)
CN (1) CN1310011C (enExample)
AU (1) AU2003254170A1 (enExample)
DE (1) DE10392975T5 (enExample)
TW (1) TWI238884B (enExample)
WO (1) WO2004013723A2 (enExample)

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