JP2005534174A - フォトレジスト・アッシング装置 - Google Patents

フォトレジスト・アッシング装置 Download PDF

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Publication number
JP2005534174A
JP2005534174A JP2004523187A JP2004523187A JP2005534174A JP 2005534174 A JP2005534174 A JP 2005534174A JP 2004523187 A JP2004523187 A JP 2004523187A JP 2004523187 A JP2004523187 A JP 2004523187A JP 2005534174 A JP2005534174 A JP 2005534174A
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JP
Japan
Prior art keywords
chamber
processing
pump
chambers
workpiece
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Pending
Application number
JP2004523187A
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English (en)
Japanese (ja)
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JP2005534174A5 (https=
Inventor
ワン，アルバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of JP2005534174A publication Critical patent/JP2005534174A/ja
Publication of JP2005534174A5 publication Critical patent/JP2005534174A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Drying Of Semiconductors (AREA)
JP2004523187A 2002-07-19 2003-07-21 フォトレジスト・アッシング装置 Pending JP2005534174A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39759202P 2002-07-19 2002-07-19
PCT/US2003/022676 WO2004010482A1 (en) 2002-07-19 2003-07-21 Dual chamber vacuum processing system

Publications (2)

Publication Number Publication Date
JP2005534174A true JP2005534174A (ja) 2005-11-10
JP2005534174A5 JP2005534174A5 (https=) 2006-09-07

Family

ID=30771084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004523187A Pending JP2005534174A (ja) 2002-07-19 2003-07-21 フォトレジスト・アッシング装置

Country Status (3)

Country Link
US (1) US20040089227A1 (https=)
JP (1) JP2005534174A (https=)
WO (1) WO2004010482A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029561A (ja) * 2009-07-29 2011-02-10 Ulvac Japan Ltd 複数のプラズマ処理装置のプラズマ生成方法及びプラズマ処理装置システム
JP2019516242A (ja) * 2016-04-11 2019-06-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハガス放出のためのプラズマエンハンストアニールチャンバ

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US7601648B2 (en) 2006-07-31 2009-10-13 Applied Materials, Inc. Method for fabricating an integrated gate dielectric layer for field effect transistors
KR100826502B1 (ko) 2006-09-18 2008-05-02 삼성전자주식회사 반도체 제조장치
US20120009694A1 (en) * 2010-07-12 2012-01-12 National Institute Of Standards And Technology Apparatus and method for monitoring precursor flux
US20120088370A1 (en) * 2010-10-06 2012-04-12 Lam Research Corporation Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods
KR101847026B1 (ko) * 2011-03-01 2018-04-09 어플라이드 머티어리얼스, 인코포레이티드 공유된 펌프를 갖는 진공 챔버들
JP6738485B2 (ja) * 2016-08-26 2020-08-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低圧リフトピンキャビティハードウェア
DE102017214687A1 (de) * 2017-08-22 2019-02-28 centrotherm international AG Behandlungsvorrichtung für Substrate und Verfahren zum Betrieb einer solchen Behandlungsvorrichtung
US11239056B2 (en) 2019-07-29 2022-02-01 Advanced Energy Industries, Inc. Multiplexed power generator output with channel offsets for pulsed driving of multiple loads
DE102021202169A1 (de) 2021-03-05 2022-09-08 centrotherm international AG Verfahren zum Betrieb einer Substrat-Behandlungsvorrichtung und Substrat-Behandlungsvorrichtung
US20260018437A1 (en) * 2024-07-09 2026-01-15 Applied Materials, Inc. Chamber body with trench for rf transmission lines

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US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
JP3332053B2 (ja) * 1993-10-27 2002-10-07 清原 まさ子 チャンバーへのガス供給方法
JP3279038B2 (ja) * 1994-01-31 2002-04-30 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
DE4405427C1 (de) * 1994-02-21 1995-11-02 Hennecke Gmbh Maschf Verfahren und Vorrichtung zur Herstellung von endlosen Polyurethan-Formkörpern
JPH0874028A (ja) * 1994-09-01 1996-03-19 Matsushita Electric Ind Co Ltd 薄膜形成装置および薄膜形成方法
US5595482A (en) * 1994-10-27 1997-01-21 Parsons; Marshall F. Airlocking system and method for feeding bulk granular material
JP2665202B2 (ja) * 1995-05-31 1997-10-22 九州日本電気株式会社 半導体ウェハ処理装置
US5900105A (en) * 1996-07-09 1999-05-04 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
JP3947761B2 (ja) * 1996-09-26 2007-07-25 株式会社日立国際電気 基板処理装置、基板搬送機および基板処理方法
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5955383A (en) * 1997-01-22 1999-09-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling etch rate when using consumable electrodes during plasma etching
US6228773B1 (en) * 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
US6318384B1 (en) * 1999-09-24 2001-11-20 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates
US6227773B1 (en) * 2000-01-03 2001-05-08 The Boeing Company Compact autofeed drill and associated drilling method and apparatus
US6630053B2 (en) * 2000-08-22 2003-10-07 Asm Japan K.K. Semiconductor processing module and apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029561A (ja) * 2009-07-29 2011-02-10 Ulvac Japan Ltd 複数のプラズマ処理装置のプラズマ生成方法及びプラズマ処理装置システム
JP2019516242A (ja) * 2016-04-11 2019-06-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハガス放出のためのプラズマエンハンストアニールチャンバ
US10770272B2 (en) 2016-04-11 2020-09-08 Applied Materials, Inc. Plasma-enhanced anneal chamber for wafer outgassing
JP2020184639A (ja) * 2016-04-11 2020-11-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハガス放出のためのプラズマエンハンストアニールチャンバ
US11348769B2 (en) 2016-04-11 2022-05-31 Applied Materials, Inc. Plasma-enhanced anneal chamber for wafer outgassing
CN115206765A (zh) * 2016-04-11 2022-10-18 应用材料公司 用于晶片放气的等离子体增强退火腔室
JP7358301B2 (ja) 2016-04-11 2023-10-10 アプライド マテリアルズ インコーポレイテッド ウエハガス放出のためのプラズマエンハンストアニールチャンバ

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US20040089227A1 (en) 2004-05-13
WO2004010482A1 (en) 2004-01-29

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