JP2005534174A - フォトレジスト・アッシング装置 - Google Patents

フォトレジスト・アッシング装置 Download PDF

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Publication number
JP2005534174A
JP2005534174A JP2004523187A JP2004523187A JP2005534174A JP 2005534174 A JP2005534174 A JP 2005534174A JP 2004523187 A JP2004523187 A JP 2004523187A JP 2004523187 A JP2004523187 A JP 2004523187A JP 2005534174 A JP2005534174 A JP 2005534174A
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JP
Japan
Prior art keywords
chamber
processing
pump
chambers
workpiece
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Pending
Application number
JP2004523187A
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English (en)
Japanese (ja)
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JP2005534174A5 (enExample
Inventor
ワン，アルバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
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Axcelis Technologies Inc
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Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of JP2005534174A publication Critical patent/JP2005534174A/ja
Publication of JP2005534174A5 publication Critical patent/JP2005534174A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2004523187A 2002-07-19 2003-07-21 フォトレジスト・アッシング装置 Pending JP2005534174A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39759202P 2002-07-19 2002-07-19
PCT/US2003/022676 WO2004010482A1 (en) 2002-07-19 2003-07-21 Dual chamber vacuum processing system

Publications (2)

Publication Number Publication Date
JP2005534174A true JP2005534174A (ja) 2005-11-10
JP2005534174A5 JP2005534174A5 (enExample) 2006-09-07

Family

ID=30771084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004523187A Pending JP2005534174A (ja) 2002-07-19 2003-07-21 フォトレジスト・アッシング装置

Country Status (3)

Country Link
US (1) US20040089227A1 (enExample)
JP (1) JP2005534174A (enExample)
WO (1) WO2004010482A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029561A (ja) * 2009-07-29 2011-02-10 Ulvac Japan Ltd 複数のプラズマ処理装置のプラズマ生成方法及びプラズマ処理装置システム
JP2019516242A (ja) * 2016-04-11 2019-06-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハガス放出のためのプラズマエンハンストアニールチャンバ

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US7601648B2 (en) 2006-07-31 2009-10-13 Applied Materials, Inc. Method for fabricating an integrated gate dielectric layer for field effect transistors
KR100826502B1 (ko) 2006-09-18 2008-05-02 삼성전자주식회사 반도체 제조장치
US20120009694A1 (en) * 2010-07-12 2012-01-12 National Institute Of Standards And Technology Apparatus and method for monitoring precursor flux
US20120088370A1 (en) * 2010-10-06 2012-04-12 Lam Research Corporation Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods
US20120222813A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Vacuum chambers with shared pump
CN109563617B (zh) * 2016-08-26 2021-06-08 应用材料公司 低压升降杆腔硬件
DE102017214687A1 (de) * 2017-08-22 2019-02-28 centrotherm international AG Behandlungsvorrichtung für Substrate und Verfahren zum Betrieb einer solchen Behandlungsvorrichtung
KR102886124B1 (ko) 2019-07-29 2025-11-14 에이이에스 글로벌 홀딩스 피티이 리미티드 다수의 부하의 펄스 구동을 위한 채널 오프셋을 갖는 멀티플렉싱된 전력 발생기 출력
DE102021202169A1 (de) 2021-03-05 2022-09-08 centrotherm international AG Verfahren zum Betrieb einer Substrat-Behandlungsvorrichtung und Substrat-Behandlungsvorrichtung

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US4612207A (en) * 1985-01-14 1986-09-16 Xerox Corporation Apparatus and process for the fabrication of large area thin film multilayers
US4638176A (en) * 1985-08-01 1987-01-20 Mullett Associates, Inc. Uninterruptible power supply
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US4692343A (en) * 1985-08-05 1987-09-08 Spectrum Cvd, Inc. Plasma enhanced CVD
US5292393A (en) * 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
US5138973A (en) * 1987-07-16 1992-08-18 Texas Instruments Incorporated Wafer processing apparatus having independently controllable energy sources
US5225771A (en) * 1988-05-16 1993-07-06 Dri Technology Corp. Making and testing an integrated circuit using high density probe points
US5019233A (en) * 1988-10-31 1991-05-28 Eaton Corporation Sputtering system
US5000682A (en) * 1990-01-22 1991-03-19 Semitherm Vertical thermal processor for semiconductor wafers
US5310410A (en) * 1990-04-06 1994-05-10 Sputtered Films, Inc. Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus
KR100230697B1 (ko) * 1992-02-18 1999-11-15 이노우에 쥰이치 감압 처리 장치
US5338423A (en) * 1992-11-06 1994-08-16 Zilog, Inc. Method of eliminating metal voiding in a titanium nitride/aluminum processing
CH687986A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Plasmabehandlungsanlage und Verfahren zu deren Betrieb.
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
JP3332053B2 (ja) * 1993-10-27 2002-10-07 清原 まさ子 チャンバーへのガス供給方法
JP3279038B2 (ja) * 1994-01-31 2002-04-30 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
DE4405427C1 (de) * 1994-02-21 1995-11-02 Hennecke Gmbh Maschf Verfahren und Vorrichtung zur Herstellung von endlosen Polyurethan-Formkörpern
JPH0874028A (ja) * 1994-09-01 1996-03-19 Matsushita Electric Ind Co Ltd 薄膜形成装置および薄膜形成方法
US5595482A (en) * 1994-10-27 1997-01-21 Parsons; Marshall F. Airlocking system and method for feeding bulk granular material
JP2665202B2 (ja) * 1995-05-31 1997-10-22 九州日本電気株式会社 半導体ウェハ処理装置
US5900105A (en) * 1996-07-09 1999-05-04 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
JP3947761B2 (ja) * 1996-09-26 2007-07-25 株式会社日立国際電気 基板処理装置、基板搬送機および基板処理方法
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5955383A (en) * 1997-01-22 1999-09-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling etch rate when using consumable electrodes during plasma etching
US6228773B1 (en) * 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
US6318384B1 (en) * 1999-09-24 2001-11-20 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates
US6227773B1 (en) * 2000-01-03 2001-05-08 The Boeing Company Compact autofeed drill and associated drilling method and apparatus
US6630053B2 (en) * 2000-08-22 2003-10-07 Asm Japan K.K. Semiconductor processing module and apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029561A (ja) * 2009-07-29 2011-02-10 Ulvac Japan Ltd 複数のプラズマ処理装置のプラズマ生成方法及びプラズマ処理装置システム
JP2019516242A (ja) * 2016-04-11 2019-06-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハガス放出のためのプラズマエンハンストアニールチャンバ
US10770272B2 (en) 2016-04-11 2020-09-08 Applied Materials, Inc. Plasma-enhanced anneal chamber for wafer outgassing
JP2020184639A (ja) * 2016-04-11 2020-11-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウエハガス放出のためのプラズマエンハンストアニールチャンバ
US11348769B2 (en) 2016-04-11 2022-05-31 Applied Materials, Inc. Plasma-enhanced anneal chamber for wafer outgassing
CN115206765A (zh) * 2016-04-11 2022-10-18 应用材料公司 用于晶片放气的等离子体增强退火腔室
JP7358301B2 (ja) 2016-04-11 2023-10-10 アプライド マテリアルズ インコーポレイテッド ウエハガス放出のためのプラズマエンハンストアニールチャンバ

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Publication number Publication date
US20040089227A1 (en) 2004-05-13
WO2004010482A1 (en) 2004-01-29

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