JP2005534163A - 高ｋ誘電体膜及びその形成方法 - Google Patents

高ｋ誘電体膜及びその形成方法 Download PDF

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JP2005534163A
JP2005534163A JP2003577313A JP2003577313A JP2005534163A JP 2005534163 A JP2005534163 A JP 2005534163A JP 2003577313 A JP2003577313 A JP 2003577313A JP 2003577313 A JP2003577313 A JP 2003577313A JP 2005534163 A JP2005534163 A JP 2005534163A
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dielectric layer
nitrogen
dielectric
layer
semiconductor structure
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Japanese (ja)
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JP2005534163A5 (enExample
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ニュエン、ビチ−エン
ヅオ、ホン−ウェ
ワン、シャォ−ピン
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
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    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)
JP2003577313A 2002-03-15 2003-03-12 高ｋ誘電体膜及びその形成方法 Pending JP2005534163A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/099,794 US6770923B2 (en) 2001-03-20 2002-03-15 High K dielectric film
PCT/US2003/007717 WO2003079413A2 (en) 2002-03-15 2003-03-12 High k dielectric film and method for making

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JP2005534163A true JP2005534163A (ja) 2005-11-10
JP2005534163A5 JP2005534163A5 (enExample) 2006-05-11

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US (1) US6770923B2 (enExample)
EP (1) EP1485941A2 (enExample)
JP (1) JP2005534163A (enExample)
KR (2) KR20040087343A (enExample)
AU (1) AU2003220232A1 (enExample)
TW (1) TWI278918B (enExample)
WO (1) WO2003079413A2 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031760A (ja) * 2002-06-27 2004-01-29 Nec Corp 半導体装置およびその製造方法
JP2008227406A (ja) * 2007-03-15 2008-09-25 Toshiba Corp 半導体装置
JP2009004639A (ja) * 2007-06-22 2009-01-08 Toshiba Corp 不揮発性半導体メモリ装置
JP2009532881A (ja) * 2006-03-31 2009-09-10 東京エレクトロン株式会社 原子層成膜により混合希土類酸化物およびアルミン酸塩の膜を形成する方法
WO2010073434A1 (ja) * 2008-12-26 2010-07-01 パナソニック株式会社 半導体装置及びその製造方法
JP2010182964A (ja) * 2009-02-06 2010-08-19 Toshiba Corp 半導体装置及びその製造方法
WO2011089647A1 (ja) * 2010-01-22 2011-07-28 株式会社 東芝 半導体装置及びその製造方法
JP2013125965A (ja) * 2011-12-15 2013-06-24 Jiaotong Univ 半導体素子及びその製造方法
US9755040B2 (en) 2013-05-31 2017-09-05 Sumitomo Chemical Company, Limited Semiconductor wafer, method of producing semiconductor wafer and electronic device
WO2022054623A1 (ja) * 2020-09-10 2022-03-17 東京エレクトロン株式会社 成膜方法

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US7075829B2 (en) 2001-08-30 2006-07-11 Micron Technology, Inc. Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
US7087954B2 (en) 2001-08-30 2006-08-08 Micron Technology, Inc. In service programmable logic arrays with low tunnel barrier interpoly insulators
US6754108B2 (en) 2001-08-30 2004-06-22 Micron Technology, Inc. DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US7132711B2 (en) 2001-08-30 2006-11-07 Micron Technology, Inc. Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
US7068544B2 (en) 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
US7042043B2 (en) * 2001-08-30 2006-05-09 Micron Technology, Inc. Programmable array logic or memory devices with asymmetrical tunnel barriers
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US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6790791B2 (en) 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US6984592B2 (en) * 2002-08-28 2006-01-10 Micron Technology, Inc. Systems and methods for forming metal-doped alumina
US7199023B2 (en) 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
JP2004214366A (ja) * 2002-12-27 2004-07-29 Nec Electronics Corp 半導体装置及びその製造方法
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
JP2005158998A (ja) * 2003-11-26 2005-06-16 Toshiba Corp 半導体装置の製造方法
US7102875B2 (en) * 2003-12-29 2006-09-05 Hynix Semiconductor Inc. Capacitor with aluminum oxide and lanthanum oxide containing dielectric structure and fabrication method thereof
US7109068B2 (en) * 2004-08-31 2006-09-19 Micron Technology, Inc. Through-substrate interconnect fabrication methods
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
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US7564108B2 (en) * 2004-12-20 2009-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Nitrogen treatment to improve high-k gate dielectrics
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7374964B2 (en) 2005-02-10 2008-05-20 Micron Technology, Inc. Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
US7399666B2 (en) * 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US7365027B2 (en) 2005-03-29 2008-04-29 Micron Technology, Inc. ALD of amorphous lanthanide doped TiOx films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7390756B2 (en) 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7429529B2 (en) * 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
US7410910B2 (en) * 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
US7517798B2 (en) 2005-09-01 2009-04-14 Micron Technology, Inc. Methods for forming through-wafer interconnects and structures resulting therefrom
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US7892972B2 (en) 2006-02-03 2011-02-22 Micron Technology, Inc. Methods for fabricating and filling conductive vias and conductive vias so formed
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20080001237A1 (en) * 2006-06-29 2008-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming same
US7956168B2 (en) * 2006-07-06 2011-06-07 Praxair Technology, Inc. Organometallic compounds having sterically hindered amides
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
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