TWI278918B - High K dielectric film and method for making - Google Patents

High K dielectric film and method for making Download PDF

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Publication number
TWI278918B
TWI278918B TW092105614A TW92105614A TWI278918B TW I278918 B TWI278918 B TW I278918B TW 092105614 A TW092105614 A TW 092105614A TW 92105614 A TW92105614 A TW 92105614A TW I278918 B TWI278918 B TW I278918B
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Taiwan
Prior art keywords
dielectric
layer
nitrogen
dielectric layer
conductor
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TW092105614A
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English (en)
Chinese (zh)
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TW200305936A (en
Inventor
Bich-Yen Nguyen
Hong-Wei Zhou
Xiao-Ping Wang
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Freescale Semiconductor Inc
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Publication of TW200305936A publication Critical patent/TW200305936A/zh
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Publication of TWI278918B publication Critical patent/TWI278918B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)
TW092105614A 2002-03-15 2003-03-14 High K dielectric film and method for making TWI278918B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/099,794 US6770923B2 (en) 2001-03-20 2002-03-15 High K dielectric film

Publications (2)

Publication Number Publication Date
TW200305936A TW200305936A (en) 2003-11-01
TWI278918B true TWI278918B (en) 2007-04-11

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Family Applications (1)

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TW092105614A TWI278918B (en) 2002-03-15 2003-03-14 High K dielectric film and method for making

Country Status (7)

Country Link
US (1) US6770923B2 (enExample)
EP (1) EP1485941A2 (enExample)
JP (1) JP2005534163A (enExample)
KR (2) KR20040087343A (enExample)
AU (1) AU2003220232A1 (enExample)
TW (1) TWI278918B (enExample)
WO (1) WO2003079413A2 (enExample)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7476925B2 (en) 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US6963103B2 (en) 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US7075829B2 (en) 2001-08-30 2006-07-11 Micron Technology, Inc. Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
US7087954B2 (en) 2001-08-30 2006-08-08 Micron Technology, Inc. In service programmable logic arrays with low tunnel barrier interpoly insulators
US6754108B2 (en) 2001-08-30 2004-06-22 Micron Technology, Inc. DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US7132711B2 (en) 2001-08-30 2006-11-07 Micron Technology, Inc. Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
US7068544B2 (en) 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
US7042043B2 (en) * 2001-08-30 2006-05-09 Micron Technology, Inc. Programmable array logic or memory devices with asymmetrical tunnel barriers
US6778441B2 (en) 2001-08-30 2004-08-17 Micron Technology, Inc. Integrated circuit memory device and method
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
JP4643884B2 (ja) * 2002-06-27 2011-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6790791B2 (en) 2002-08-15 2004-09-14 Micron Technology, Inc. Lanthanide doped TiOx dielectric films
US6984592B2 (en) * 2002-08-28 2006-01-10 Micron Technology, Inc. Systems and methods for forming metal-doped alumina
US7199023B2 (en) 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
JP2004214366A (ja) * 2002-12-27 2004-07-29 Nec Electronics Corp 半導体装置及びその製造方法
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
JP2005158998A (ja) * 2003-11-26 2005-06-16 Toshiba Corp 半導体装置の製造方法
US7102875B2 (en) * 2003-12-29 2006-09-05 Hynix Semiconductor Inc. Capacitor with aluminum oxide and lanthanum oxide containing dielectric structure and fabrication method thereof
US7109068B2 (en) * 2004-08-31 2006-09-19 Micron Technology, Inc. Through-substrate interconnect fabrication methods
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7202562B2 (en) * 2004-12-02 2007-04-10 Micron Technology, Inc. Integrated circuit cooling system and method
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7564108B2 (en) * 2004-12-20 2009-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Nitrogen treatment to improve high-k gate dielectrics
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7374964B2 (en) 2005-02-10 2008-05-20 Micron Technology, Inc. Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
US7399666B2 (en) * 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US7365027B2 (en) 2005-03-29 2008-04-29 Micron Technology, Inc. ALD of amorphous lanthanide doped TiOx films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7390756B2 (en) 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7429529B2 (en) * 2005-08-05 2008-09-30 Farnworth Warren M Methods of forming through-wafer interconnects and structures resulting therefrom
US7410910B2 (en) * 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
US7517798B2 (en) 2005-09-01 2009-04-14 Micron Technology, Inc. Methods for forming through-wafer interconnects and structures resulting therefrom
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
US7892972B2 (en) 2006-02-03 2011-02-22 Micron Technology, Inc. Methods for fabricating and filling conductive vias and conductive vias so formed
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20070237697A1 (en) * 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US20080001237A1 (en) * 2006-06-29 2008-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming same
US7956168B2 (en) * 2006-07-06 2011-06-07 Praxair Technology, Inc. Organometallic compounds having sterically hindered amides
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7432548B2 (en) 2006-08-31 2008-10-07 Micron Technology, Inc. Silicon lanthanide oxynitride films
JP4504392B2 (ja) * 2007-03-15 2010-07-14 株式会社東芝 半導体装置
JP5221065B2 (ja) * 2007-06-22 2013-06-26 株式会社東芝 不揮発性半導体メモリ装置
KR100877261B1 (ko) * 2007-07-23 2009-01-07 주식회사 동부하이텍 반도체 소자의 ｍｉｍ 커패시터 제조 방법
US7998820B2 (en) 2007-08-07 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. High-k gate dielectric and method of manufacture
JP2009054951A (ja) * 2007-08-29 2009-03-12 Toshiba Corp 不揮発性半導体記憶素子及びその製造方法
JP5100313B2 (ja) * 2007-10-31 2012-12-19 株式会社東芝 酸化ランタン化合物の製造方法
US20090142899A1 (en) * 2007-12-04 2009-06-04 Jensen Jacob M Interfacial layer for hafnium-based high-k/metal gate transistors
JP2010040994A (ja) * 2008-08-08 2010-02-18 Toshiba Corp 半導体記憶装置、及びその製造方法
JP5127694B2 (ja) * 2008-12-26 2013-01-23 パナソニック株式会社 半導体装置及びその製造方法
JP5232035B2 (ja) * 2009-02-06 2013-07-10 株式会社東芝 半導体装置及びその製造方法
JP5235784B2 (ja) 2009-05-25 2013-07-10 パナソニック株式会社 半導体装置
JP5475807B2 (ja) * 2010-01-22 2014-04-16 株式会社東芝 半導体装置及びその製造方法
CN102650051A (zh) * 2011-02-25 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102650039A (zh) * 2011-02-28 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102677007A (zh) * 2011-03-14 2012-09-19 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102756513A (zh) * 2011-04-28 2012-10-31 鸿富锦精密工业（深圳）有限公司 铝合金或镁合金防腐处理方法及铝合金或镁合金制品
TW201324587A (zh) * 2011-12-15 2013-06-16 Univ Nat Chiao Tung 半導體元件及其製作方法
US20130277765A1 (en) 2012-04-23 2013-10-24 Globalfoundries Inc. Semiconductor device including graded gate stack, related method and design structure
US9405290B1 (en) 2013-01-17 2016-08-02 Kla-Tencor Corporation Model for optical dispersion of high-K dielectrics including defects
JP6272612B2 (ja) 2013-05-31 2018-01-31 住友化学株式会社 半導体基板、半導体基板の製造方法および電子デバイス
WO2015047317A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Semiconductor device having group iii-v material active region and graded gate dielectric
US9728597B2 (en) * 2014-12-04 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal structure and method for forming the same
WO2017111872A1 (en) * 2015-12-24 2017-06-29 Intel Corporation Dielectric metal oxide cap for channel containing germanium
JP2022046097A (ja) * 2020-09-10 2022-03-23 東京エレクトロン株式会社 成膜方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879079A (en) 1984-07-16 1989-11-07 Gte Products Corporation Formation of lanthanum aluminate
EP0546779A1 (en) * 1991-12-13 1993-06-16 Shimadzu Corporation Oxynitride glass fiber for composite products, and glass fiber-reinforced products
JPH05279129A (ja) * 1992-03-31 1993-10-26 Isuzu Motors Ltd 低熱伝導セラミックス及びその製造方法
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials
US5585300A (en) 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
JP3190274B2 (ja) * 1996-12-28 2001-07-23 ティーディーケイ株式会社 光記録媒体およびその製造方法
US6020243A (en) 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
JPH11135755A (ja) * 1997-10-31 1999-05-21 Nippon Steel Corp 半導体装置の製造方法
US5940698A (en) 1997-12-01 1999-08-17 Advanced Micro Devices Method of making a semiconductor device having high performance gate electrode structure
US6008091A (en) 1998-01-27 1999-12-28 Lucent Technologies Inc. Floating gate avalanche injection MOS transistors with high K dielectric control gates
US6069387A (en) 1998-04-06 2000-05-30 Advanced Micro Devices, Inc. Lightly doped drain formation integrated with source/drain formation for high-performance transistor formation
US6153477A (en) 1998-04-14 2000-11-28 Advanced Micro Devices, Inc. Ultra short transistor channel length formed using a gate dielectric having a relatively high dielectric constant
JP2000012804A (ja) * 1998-06-24 2000-01-14 Matsushita Electron Corp 半導体記憶装置
KR100297938B1 (ko) * 1998-07-11 2001-10-26 윤종용 비휘발성메모리장치및그제조방법
US6255122B1 (en) * 1999-04-27 2001-07-03 International Business Machines Corporation Amorphous dielectric capacitors on silicon
JP4472056B2 (ja) * 1999-07-23 2010-06-02 株式会社半導体エネルギー研究所 エレクトロルミネッセンス表示装置及びその作製方法
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6541079B1 (en) 1999-10-25 2003-04-01 International Business Machines Corporation Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
AU2001234468A1 (en) 2000-01-19 2001-07-31 North Carolina State University Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same
JP2001298099A (ja) * 2000-04-14 2001-10-26 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置およびその製造方法
EP1297565A2 (en) 2000-06-26 2003-04-02 North Carolina State University Novel non-crystalline oxides for use in microelectronic, optical, and other applications
WO2002009167A2 (en) 2000-07-20 2002-01-31 North Carolina State University High dielectric constant metal silicates formed by controlled metal-surface reactions
US6524967B1 (en) * 2000-08-01 2003-02-25 Motorola, Inc. Method for incorporating nitrogen into a dielectric layer using a special precursor

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WO2003079413A2 (en) 2003-09-25
US6770923B2 (en) 2004-08-03
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AU2003220232A8 (en) 2003-09-29
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