JP2010153752A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 98
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 50
- 238000000137 annealing Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 32
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 28
- 230000007423 decrease Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910010037 TiAlN Inorganic materials 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 95
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000005121 nitriding Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002604 lanthanum compounds Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
【解決手段】半導体装置は、半導体基板1と、半導体基板1の上に形成された界面層5と、界面層5の上に形成された高誘電率ゲート絶縁膜6と、高誘電率ゲート絶縁膜6上に形成されたゲート電極とを備える。高誘電率ゲート絶縁膜6はランタンを含有し、高誘電率ゲート絶縁膜6におけるゲート電極との界面に含まれているランタンの濃度は、高誘電率ゲート絶縁膜における界面層との界面に含まれているランタンの濃度よりも大きい。
【選択図】図5
Description
ここで、上述した本発明の例示的一実施形態の半導体装置及びその製造方法の変形例について説明する。
2 分離絶縁膜
3 nウェル領域
4 pウェル領域
5 界面層
6 high−k絶縁膜
8 TiN層
9 ランタン層
10 TiN層
11a 接合深さが比較的浅いp型不純物拡散層
11b 接合深さが比較的浅いn型不純物拡散層
12 サイドウォール
13a 接合深さが比較的深いp型不純物拡散層
13b 接合深さが比較的深いn型不純物拡散層
14 シリサイド層
15 層間絶縁膜
16 コンタクトプラグ
Claims (11)
- 半導体基板と、
前記半導体基板の上に形成された界面層と、
前記界面層の上に形成された高誘電率ゲート絶縁膜と、
前記高誘電率ゲート絶縁膜上に形成されたゲート電極とを備え、
前記高誘電率ゲート絶縁膜はランタンを含有しており、
前記高誘電率ゲート絶縁膜における前記ゲート電極との界面に含まれている前記ランタンの濃度は、前記高誘電率ゲート絶縁膜における前記界面層との界面に含まれている前記ランタンの濃度よりも大きく、
前記高誘電率ゲート絶縁膜における前記界面層との界面中の前記ランタンの濃度(atm%)は、3%以下である、半導体装置。 - 請求項1に記載の半導体装置において、
前記高誘電率ゲート絶縁膜における前記界面層との界面中の前記ランタンの濃度(atm%)は、2%以下である、半導体装置。 - 請求項1又は2に記載の半導体装置において、
前記高誘電率ゲート絶縁膜における前記ゲート電極との界面中の前記ランタンの濃度(atm%)は、7%以下である、半導体装置。 - 請求項1〜3のうちのいずれか1項に記載の半導体装置において、
前記界面層における前記半導体基板との界面中の前記ランタンの濃度(atm%)は、2%以下である、半導体装置。 - 請求項4に記載の半導体装置において、
前記界面層における前記半導体基板との界面中の前記ランタンの濃度(atm%)は、1%以下である、半導体装置。 - 請求項1〜5のうちのいずれか1項に記載の半導体装置において、
前記高誘電率ゲート絶縁膜中に含有される前記ランタンの濃度分布は、前記ゲート電極側から前記半導体基板側に向かって単調に減少している、半導体装置。 - 請求項6に記載の半導体装置において、
前記高誘電率ゲート絶縁膜中に含有される前記ランタンの濃度分布は、前記ゲート電極側から前記高誘電率ゲート絶縁膜の高さ方向の中央部に向かって急峻に減少した後、前記界面層側に向かってなだらかに減少している、半導体装置。 - 請求項1〜7のうちのいずれか1項に記載の半導体装置において、
前記高誘電率ゲート絶縁膜は、ハフニウム若しくはジルコニウムを含む酸化膜又はシリコン酸化膜からなる、半導体装置。 - 請求項1〜8のうちのいずれか1項に記載の半導体装置において、
前記ゲート電極は、窒化チタン(TiN)、窒化タンタル(TaN)、炭素含有タンタル(TaC)、又はアルミニウム含有窒化チタン(TiAlN)からなる、半導体装置。 - P型トランジスタ形成領域とN型トランジスタ形成領域とを有する半導体基板の上に界面層を形成する工程(a)と、
前記界面層の上に高誘電率ゲート絶縁膜を形成する工程(b)と、
前記高誘電率ゲート絶縁膜上に、前記P型トランジスタ形成領域を覆うハードマスクを形成する工程(c)と、
前記工程(c)の後に、前記半導体基板上に、ランタン層を形成する工程(d)と、
アニール処理により、前記N型トランジスタ形成領域における前記高誘電率ゲート絶縁膜中に前記ランタン層からのランタンを拡散させる工程(e)と、
前記工程(e)の後に残存している前記ランタン層を除去する工程(f)と、
前記工程(f)の後に、前記P型トランジスタ形成領域には、前記高誘電率ゲート絶縁膜上に前記ハードマスクを介してP型ゲート電極を形成する一方で、前記N型トランジスタ形成領域には、前記高誘電率ゲート絶縁膜上にN型ゲート電極を形成する工程(g)とを備え、
前記高誘電率ゲート絶縁膜における前記ゲート電極との界面に含まれている前記ランタンの濃度は、前記高誘電率ゲート絶縁膜における前記界面層との界面に含まれている前記ランタンの濃度よりも大きい、半導体装置の製造方法。 - 請求項10に記載の半導体装置の製造方法において、
前記工程(d)における前記ランタン層の形成は、La若しくはLa2O3からなるターゲットを用いたPVD法、CVD法、又は、原子層堆積法を用いて行う工程であり、
前記工程(e)における前記アニール処理は、400℃以上で且つ800℃以下の温度で行う工程である、半導体装置の製造方法。
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