JP2005533896A - 犠牲的反射防止材料の湿式剥離除去のための組成物および方法 - Google Patents

犠牲的反射防止材料の湿式剥離除去のための組成物および方法 Download PDF

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Publication number
JP2005533896A
JP2005533896A JP2004523443A JP2004523443A JP2005533896A JP 2005533896 A JP2005533896 A JP 2005533896A JP 2004523443 A JP2004523443 A JP 2004523443A JP 2004523443 A JP2004523443 A JP 2004523443A JP 2005533896 A JP2005533896 A JP 2005533896A
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Japan
Prior art keywords
formulation
composition
wet stripping
stripping composition
water
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JP2004523443A
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English (en)
Japanese (ja)
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JP2005533896A5 (enExample
Inventor
バウム，トーマス，エイチ．
バーンハード，デービッド
ミンセク，デービッド
マーフィ，メリッサ
Original Assignee
アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
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Publication of JP2005533896A publication Critical patent/JP2005533896A/ja
Publication of JP2005533896A5 publication Critical patent/JP2005533896A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2004523443A 2002-07-23 2003-07-16 犠牲的反射防止材料の湿式剥離除去のための組成物および方法 Withdrawn JP2005533896A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/201,340 US6849200B2 (en) 2002-07-23 2002-07-23 Composition and process for wet stripping removal of sacrificial anti-reflective material
PCT/US2003/022148 WO2004009730A1 (en) 2002-07-23 2003-07-16 Composition and process for wet stripping removal of sacrificial anti-reflective material

Publications (2)

Publication Number Publication Date
JP2005533896A true JP2005533896A (ja) 2005-11-10
JP2005533896A5 JP2005533896A5 (enExample) 2006-09-21

Family

ID=30769632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004523443A Withdrawn JP2005533896A (ja) 2002-07-23 2003-07-16 犠牲的反射防止材料の湿式剥離除去のための組成物および方法

Country Status (7)

Country Link
US (1) US6849200B2 (enExample)
EP (1) EP1551936A4 (enExample)
JP (1) JP2005533896A (enExample)
CN (1) CN1671821A (enExample)
AU (1) AU2003249279A1 (enExample)
TW (1) TW200408003A (enExample)
WO (1) WO2004009730A1 (enExample)

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WO2023176642A1 (ja) * 2022-03-14 2023-09-21 日本化薬株式会社 処理液およびその使用方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023176642A1 (ja) * 2022-03-14 2023-09-21 日本化薬株式会社 処理液およびその使用方法
JP7395795B1 (ja) * 2022-03-14 2023-12-11 日本化薬株式会社 処理液およびその使用方法

Also Published As

Publication number Publication date
EP1551936A4 (en) 2008-04-16
WO2004009730A1 (en) 2004-01-29
EP1551936A1 (en) 2005-07-13
AU2003249279A1 (en) 2004-02-09
US20040016904A1 (en) 2004-01-29
CN1671821A (zh) 2005-09-21
TW200408003A (en) 2004-05-16
US6849200B2 (en) 2005-02-01

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