TW200408003A - Composition and method for wet stripping removal of sacrificial anti-reflective material - Google Patents

Composition and method for wet stripping removal of sacrificial anti-reflective material Download PDF

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Publication number
TW200408003A
TW200408003A TW092119794A TW92119794A TW200408003A TW 200408003 A TW200408003 A TW 200408003A TW 092119794 A TW092119794 A TW 092119794A TW 92119794 A TW92119794 A TW 92119794A TW 200408003 A TW200408003 A TW 200408003A
Authority
TW
Taiwan
Prior art keywords
item
patent application
formulation
composition according
photoresist peeling
Prior art date
Application number
TW092119794A
Other languages
English (en)
Chinese (zh)
Inventor
Thomas H Baum
David Bernhard
David Minsek
Melissa Murphy
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200408003A publication Critical patent/TW200408003A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW092119794A 2002-07-23 2003-07-21 Composition and method for wet stripping removal of sacrificial anti-reflective material TW200408003A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/201,340 US6849200B2 (en) 2002-07-23 2002-07-23 Composition and process for wet stripping removal of sacrificial anti-reflective material

Publications (1)

Publication Number Publication Date
TW200408003A true TW200408003A (en) 2004-05-16

Family

ID=30769632

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092119794A TW200408003A (en) 2002-07-23 2003-07-21 Composition and method for wet stripping removal of sacrificial anti-reflective material

Country Status (7)

Country Link
US (1) US6849200B2 (enExample)
EP (1) EP1551936A4 (enExample)
JP (1) JP2005533896A (enExample)
CN (1) CN1671821A (enExample)
AU (1) AU2003249279A1 (enExample)
TW (1) TW200408003A (enExample)
WO (1) WO2004009730A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI408212B (zh) * 2005-06-07 2013-09-11 Advanced Tech Materials 金屬及介電相容犧牲抗反射塗層清洗及移除組成物

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EP2798669B1 (en) 2011-12-28 2021-03-31 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
KR102105381B1 (ko) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. 조성물을 이용한 cmp-후 제거 방법 및 그의 이용 방법
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408212B (zh) * 2005-06-07 2013-09-11 Advanced Tech Materials 金屬及介電相容犧牲抗反射塗層清洗及移除組成物

Also Published As

Publication number Publication date
US6849200B2 (en) 2005-02-01
US20040016904A1 (en) 2004-01-29
EP1551936A4 (en) 2008-04-16
AU2003249279A1 (en) 2004-02-09
CN1671821A (zh) 2005-09-21
JP2005533896A (ja) 2005-11-10
EP1551936A1 (en) 2005-07-13
WO2004009730A1 (en) 2004-01-29

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