Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/311—Etching the insulating layers by chemical or physical means
  • H01L21/31127—Etching organic layers
  • H01L21/31133—Etching organic layers by chemical means
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
  • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
  • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
  • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02057—Cleaning during device manufacture
  • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
  • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

Definitions

• the present invention relates to a wet stripping composition and process useful for silicate stripping, e.g., wet stripping removal of sacrificial anti-reflective silicate material from a substrate or article having such material deposited thereon, particularly where the sacrificial anti-reflective silicate material is present with permanent silicate materials desired to be unaffected by the wet stripping composition.
• silicate materials may be used as sacrificial layers, with the sacrificial layer being removed before completion of the device.
• U.S. Patent No. 6,365,529 (assigned to Intel), "Method for Patterning Dual Damascene Interconnects Using a Light Absorbing Material,” describes a method for making dual-damascene structures using a dyed spin-on glass (SOG) material as a sacrificial anti-reflective coating that minimizes reflectivity variations during photolithographic patterning.
• SOG dyed spin-on glass
• ILD inter-level dielectrics
• metals metals
• barrier layers inter-level dielectrics
• HF hydrogen fluoride
• ILD materials include, by way of example, silicon dioxide, fluorinated silicate glass (FSG), and organosilicate glass (OSG), including both porous and non-porous materials.
• the HF acid solution may be buffered with amines or other bases such as ammonia or alkylamines, since buffering reduces the concentration of the active HF.
• the etch rate and/or selectivity of the fluoride solutions towards silicate glasses may be controlled by adding specific chelators to the solutions.
• the chelator interacts with the fluoride silicate reaction, and thus is capable of accelerating or retarding the etch rate.
• Chelators interact with different substrates by specific interactions that are both chelator- specific and substrate-specific. This specificity allows modification of the etch rate selectivity of a solution towards different substrates.
• U.S. Patent Nos. 5,905,063 and 5,792,274 (Tokyo Ohka Kogyo) describe residue cleaning formulations for semiconductor substrates, in which the cleaning formulations contain a hydrofluoric acid salt with a metal-free base, solvents and a buffer system, having a pH of 5 to 8.
• U.S. Patent Nos. 6,235,693 and 6,248,704 (EKC Technology) describe cleaning formulations containing fluoride, water, and solvent(s), for cleaning residue from semiconductor substrates, in which the cleaning formulations have a pH of 6 to 10.
• U.S. Patent No. 6,365,529 (Intel) describes a method for making dual damascene structures using a dyed spin-on glass (SOG) material as a SARC material.
• SOG dyed spin-on glass
• U.S. Patent No. 6,306,807 discloses formulations for cleaning post-plasma etch residues from semiconductor substrates, containing boric acid, amine(s), water, and optionally a glycol solvent or chelator.
• U.S. Patent No. 6,224,785 discloses formulations containing ammonium fluoride, amine(s), water, and a chelating agent, as useful for cleaning post plasma ash residues from semiconductor substrates.
• U.S. Patent No. 6,383,410 discloses formulations for selective etching of silicon oxides utilizing compositions containing fluoride salts, chelating agent, and glycol solvent.
• U.S. Patent No. 4,343,677 discloses a formulation for etching silicon dioxide, utilizing ammonium fluoride/hydrofluoric acid in a molar ratio of about 10:1 in water/ethylene glycol.
• the present invention relates generally to compositions and processes useful for wet stripping removal of siliceous materials, such as the removal of sacrificial anti-reflective silicate material from a material, substrate, surface or article including such sacrificial anti-reflective silicate material or having such sacrificial anti-reflective silicate material deposited thereon, particularly where the sacrificial anti-reflective material is present with permanent silicate materials desired to be unaffected by the wet stripping operation.
• the present invention in one aspect relates to a wet stripping composition, comprising:
• a nitrogenous hydrofluoride deionized water; organic solvent; and optionally: chelator and/or amine/carboxylic acid buffer.
• the nitrogenous hydrofluoride may be of any suitable type, and comprises compounds such as ammonium fluoride and other amine hydrofluoride salts.
• Another aspect of the invention relates to a wet stripping composition
• a wet stripping composition comprising:
• weight percentages are based on total weight of the composition, and total weight percentages do not exceed 100 weight %.
• the invention relates to a wet stripping composition selected from the group consisting of Formulations A-K:
• Yet another aspect of the invention relates to a wet stripping composition
• a wet stripping composition comprising semi- aqueous solvent, ammonium fluoride and an amino acid conferring on the composition etch rate selectivity between SARC and ILD materials.
• the invention relates to a method of etchingly removing sacrificial silicate material from a locus comprising same, in which the sacrificial silicate material is exposed to an etchant composition comprising:
• a nitrogenous hydrofluoride deionized water; organic solvent; and optionally: chelator and/or amine/carboxylic acid buffer, for sufficient time to at least partially etchingly remove the sacrificial silicate from the locus.
• DIW deionized water
• percentages of the components are percentages by weight, based on total weight of the composition, and wherein the total of the weight percentages of such components of the composition does not exceed 100 weight %.
• the stripping composition specified above may optionally include additional components, including active as well as inactive ingredients, e.g., stabilizers, dispersants, anti-oxidants, fillers, penetration agents, adjuvants, additives, fillers, excipients, etc.
• additional components including active as well as inactive ingredients, e.g., stabilizers, dispersants, anti-oxidants, fillers, penetration agents, adjuvants, additives, fillers, excipients, etc.
• the stripping composition consists essentially of the specified components listed by weight percentages above, wherein the specified components are present in the composition at concentrations within the respective specified weight % ranges.
• the stripping composition contains only the specified components listed by weight percentages above, in concentrations within the respective specified weight % ranges, and wherein the weight percentages of all of such specified components that are present in the composition total to 100 weight %.
• the organic solvent in stripping compositions of the present invention may include any suitable organic solvent species.
• the organic solvent in stripping compositions of the invention include one or more of (i) glycols such as ethylene glycol, propylene glycol, neopentyl glycol, etc., (ii) polyglycol(s) such as polyethylene glycol, polypropylene glycol, etc, (iii) glycol ethers, or (iv) polyglycol ethers, or the organic solvent in such stripping compositions of the invention may alternatively include compatible mixtures, blends or solutions of two or more solvent components selected from among such classes (i)- (iv).
• the chelator in stripping compositions of the invention may be of any suitable type.
• the chelator comprises an ⁇ -amino acid, such as iminodiacetic acid (IDA), whose formula is shown below.
• IDA iminodiacetic acid
• Iminodiacetic acid IDA
• Other chelatingly effective species may be employed, alternatively or in various combinations, to provide the stripping composition with a chelator that serves the function of controlling the etch rate selectivity between SARC and ILD materials.
• the amine/carboxylic acid buffer in stripping compositions of the invention may be of any suitable type, and may for example include alkyl-, dialkyl-, and/or trialkyl-amine(s) with mono-, di-, and/or tri-carboxylic acid(s).
• the buffer serves the function of appropriately stabilizing the pH of the stripping composition, since silicate etch rates are strongly pH- dependent.
• the buffer may also serve the function of controlling the etch rate selectivity between the SARC and ELD materials in use of the stripping composition.
• stripping compositions of the invention are easily formulated by simple addition of the respective ingredients and mixing to homogeneous condition.
• the stripping composition is applied in any suitable manner to the material to be stripped, e.g., by spraying the stripping composition on the surface of the material to be stripped, by dipping (in a volume of the stripping composition) of the material or article including the material to be stripped, by contacting the material or article to be stripped with another material, e.g., a pad, or fibrous sorbent applicator element, that is saturated with the stripping composition, or by any other suitable means, manner or technique, by which the stripping composition is brought into stripping contact with material to be stripped.
• a pad e.g., a pad, or fibrous sorbent applicator element
• the stripping compositions of the present invention are usefully employed to etchingly remove sacrificial silicate materials from substrates and semiconductor device structures on which the sacrificial silicate material has been deposited.
• the sacrificial silicate may be applied as an anti-reflective coating to minimize reflectivity variations during photolithographic patterning on a semiconductor device structure.
• compositions of the present invention by virtue of their selectivity for such sacrificial silicates, relative to other materials that may be present on the semiconductor substrate and exposed to the stripping composition, such as ILD structures, metallization, barrier layers, etc., achieve etch removal of the sacrificial silicates in a highly efficient manner.
• the stripping composition is readily removed from the substrate or article to which it has previously been applied, e.g., by rinse, wash, or other removal step(s), as may be desired and efficacious in a given end use application of the compositions of the present invention.
• Formulations A, B, C, and D were prepared as described below, wherein IDA is iminodiacetic acid and NHL 4 F is ammonium fluoride (anhydrous).
• Etch rates of Formulations A-D were measured for thin films coated on silicon wafers.
• Etch rates in Angstroms per minute (A/min), are given in Table 1 below, for borophosphate silicate glass (BPSG) and plasma-enhanced chemical vapor deposited tetraethoxysilicate (TEOS). Table 1 Etch Rates (A min) of Formulations A-D on BPSG and TEOS Films
• SARC a commercially available dyed silicon oxide sacrificial material
• ILD a commercially available CVD porous OSG dielectric material
• CORAL ⁇ TM dielectric an OSG low-k dielectric material commercially available from Novellus Systems
• PECVD TEOS a silicon dioxide coating deposited by plasma-enhanced chemical vapor deposition using tetraethylorthosilicate precursor.
• Formulations E, F, G and H were prepared as described below.
• Formulation E 0.5 % IDA 1.0 % NH
• FSG a low-k dielectric fluorinated silicate glass.
• LKD-5109 a spin-on, porous, low-k OSG dielectric material commercially available from JSR; OrionTM dielectric, a CVD porous low-k OSG dielectric material commercially available from Trikon;
• DUO 248 TM and DUO 193TM spin-on SARC materials (having a siloxane backbone incorporating organic light-absorbing chromophores), which are currently commercially available from Honeywell Electronic Materials, and which are commercially utilized for 248 nm and 193 nm photolithography, respectively.
• stripping compositions of the invention possess high etch rate selectivity, exhibiting high etch rates on sacrificial silicate materials and low etch rate on permanent silicate ILD materials.
• the stripping compositions of the invention therefore are highly useful in applications where sacrificial and permanent silicates are both present in the original material.
• stripping compositions of the invention are readily formulated with suitable solvent systems, e.g., semi-aqueous solvent systems, having low toxicity and low combustibility. Accordingly, the stripping compositions of the present invention achieve a substantial advance in the art of removing sacrificial silicate materials, e.g., in applications in which the sacrificial silicate is present with permanent silicate materials, in the manufacture of integrated circuit devices.

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• General Chemical & Material Sciences (AREA)
• Power Engineering (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Life Sciences & Earth Sciences (AREA)
• Geochemistry & Mineralogy (AREA)
• Inorganic Chemistry (AREA)
• Cleaning Or Drying Semiconductors (AREA)
• Weting (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Publications (1)

Family

ID=30769632

Family Applications (1)

Country Status (7)

Cited By (4)

Families Citing this family (38)

Citations (5)

Family Cites Families (20)

• 2002
  • 2002-07-23 US US10/201,340 patent/US6849200B2/en not_active Expired - Lifetime
• 2003
  • 2003-07-16 CN CNA038173972A patent/CN1671821A/zh active Pending
  • 2003-07-16 WO PCT/US2003/022148 patent/WO2004009730A1/en not_active Ceased
  • 2003-07-16 AU AU2003249279A patent/AU2003249279A1/en not_active Abandoned
  • 2003-07-16 EP EP03765600A patent/EP1551936A4/en not_active Withdrawn
  • 2003-07-16 JP JP2004523443A patent/JP2005533896A/ja not_active Withdrawn
  • 2003-07-21 TW TW092119794A patent/TW200408003A/zh unknown

Patent Citations (5)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events