JP2005526989A5 - - Google Patents

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Publication number
JP2005526989A5
JP2005526989A5 JP2003582581A JP2003582581A JP2005526989A5 JP 2005526989 A5 JP2005526989 A5 JP 2005526989A5 JP 2003582581 A JP2003582581 A JP 2003582581A JP 2003582581 A JP2003582581 A JP 2003582581A JP 2005526989 A5 JP2005526989 A5 JP 2005526989A5
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JP
Japan
Prior art keywords
photoresist composition
photoresist
composition
film
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003582581A
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English (en)
Japanese (ja)
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JP2005526989A (ja
JP4359151B2 (ja
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Publication date
Priority claimed from US10/120,952 external-priority patent/US6911293B2/en
Application filed filed Critical
Publication of JP2005526989A publication Critical patent/JP2005526989A/ja
Publication of JP2005526989A5 publication Critical patent/JP2005526989A5/ja
Application granted granted Critical
Publication of JP4359151B2 publication Critical patent/JP4359151B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003582581A 2002-04-11 2003-03-28 アセタール及びケタールを溶剤として含むフォトレジスト組成物 Expired - Fee Related JP4359151B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/120,952 US6911293B2 (en) 2002-04-11 2002-04-11 Photoresist compositions comprising acetals and ketals as solvents
PCT/EP2003/003255 WO2003085455A2 (en) 2002-04-11 2003-03-28 Photoresist compositions comprising acetals and ketals as solvents

Publications (3)

Publication Number Publication Date
JP2005526989A JP2005526989A (ja) 2005-09-08
JP2005526989A5 true JP2005526989A5 (enExample) 2006-04-13
JP4359151B2 JP4359151B2 (ja) 2009-11-04

Family

ID=28790215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003582581A Expired - Fee Related JP4359151B2 (ja) 2002-04-11 2003-03-28 アセタール及びケタールを溶剤として含むフォトレジスト組成物

Country Status (7)

Country Link
US (1) US6911293B2 (enExample)
EP (1) EP1497697B1 (enExample)
JP (1) JP4359151B2 (enExample)
KR (1) KR100869085B1 (enExample)
CN (2) CN1650232A (enExample)
TW (2) TWI318330B (enExample)
WO (1) WO2003085455A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030036948A (ko) * 2001-11-01 2003-05-12 삼성전자주식회사 포토레지스트용 노르보넨계 공중합체, 이의 제조방법 및이를 포함하는 포토레지스트 조성물
US7108958B2 (en) * 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
JP5368674B2 (ja) * 2003-10-15 2013-12-18 ブルーワー サイエンス アイ エヌ シー. 現像液に可溶な材料および現像液に可溶な材料をビアファーストデュアルダマシン適用において用いる方法
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Azエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
DE102006006022A1 (de) * 2006-02-08 2007-08-09 Clariant International Limited Verfahren zur Reinigung von Metallteilen
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US20080096785A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue
FR2912414B1 (fr) * 2007-02-13 2012-09-28 Imaje Sa Composition d'encre pour l'impression par jet d'encre.
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
KR101647158B1 (ko) 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JP5329999B2 (ja) * 2009-01-29 2013-10-30 AzエレクトロニックマテリアルズIp株式会社 パターン形成方法
KR101677058B1 (ko) * 2009-10-13 2016-11-18 금호석유화학 주식회사 폴리아세탈 수지, 그 합성 방법 및 포토레지스트 조성물
TWI539493B (zh) * 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US8853438B2 (en) 2012-11-05 2014-10-07 Dynaloy, Llc Formulations of solutions and processes for forming a substrate including an arsenic dopant
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
US9587136B2 (en) 2013-10-08 2017-03-07 Wisconsin Alumni Research Foundation Block copolymers with high Flory-Huggins interaction parameters for block copolymer lithography
CN118672057A (zh) * 2015-11-05 2024-09-20 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、图案形成方法及电子器件的制造方法
KR102475604B1 (ko) * 2016-08-25 2022-12-08 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상표시장치
EP4066059B1 (en) * 2019-11-25 2024-02-28 Merck Patent GmbH Chemically amplified photoresist
CN116256945A (zh) * 2023-03-15 2023-06-13 青岛物元技术有限公司 光刻胶材料及其应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3752371T2 (de) 1986-12-23 2004-04-15 Shipley Co. Inc., Marlborough Fotoresistzusammensetzungen und ihre Bestandteile
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
DE3841437A1 (de) * 1988-12-09 1990-06-13 Basf Ag Strahlungsempfindliches gemisch
DE4005212A1 (de) * 1990-02-20 1991-08-22 Basf Ag Strahlungsempfindliches gemisch
EP0520654A1 (en) * 1991-06-21 1992-12-30 Hoechst Celanese Corporation Deep UV light sensitive positive photoresist compositions
JPH08297372A (ja) * 1995-04-26 1996-11-12 Minolta Co Ltd 有機感光体
JP3689937B2 (ja) 1995-07-19 2005-08-31 住友化学株式会社 ナフトキノンジアジド系感光剤の製造方法
US6060217A (en) * 1997-09-02 2000-05-09 Kodak Polychrome Graphics Llc Thermal lithographic printing plates
JP4219435B2 (ja) * 1997-12-15 2009-02-04 東京応化工業株式会社 ポリフェノールジエステル化物の製造方法およびポジ型感光性組成物
DE19825244A1 (de) * 1998-06-05 1999-12-16 Kodak Polychrome Graphics Gmbh Offsetdruckplatte mit hoher Auflagenstabilität
US6613494B2 (en) * 2001-03-13 2003-09-02 Kodak Polychrome Graphics Llc Imageable element having a protective overlayer
US6706454B2 (en) * 2001-07-05 2004-03-16 Kodak Polychrome Graphics Llc Method for the production of a printing plate using particle growing acceleration by an additive polymer
US6517988B1 (en) * 2001-07-12 2003-02-11 Kodak Polychrome Graphics Llc Radiation-sensitive, positive working coating composition based on carboxylic copolymers
US6645689B2 (en) * 2002-03-13 2003-11-11 Kodak Polychrome Graphics Llc Solvent resistant polymers with improved bakeability features

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