KR100869085B1 - 용매로서 아세탈 및 케탈을 포함하는 포토레지스트 조성물 - Google Patents

용매로서 아세탈 및 케탈을 포함하는 포토레지스트 조성물 Download PDF

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Publication number
KR100869085B1
KR100869085B1 KR1020047016107A KR20047016107A KR100869085B1 KR 100869085 B1 KR100869085 B1 KR 100869085B1 KR 1020047016107 A KR1020047016107 A KR 1020047016107A KR 20047016107 A KR20047016107 A KR 20047016107A KR 100869085 B1 KR100869085 B1 KR 100869085B1
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South Korea
Prior art keywords
photoresist
photoresist composition
solvent
film
composition
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Expired - Fee Related
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KR1020047016107A
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English (en)
Korean (ko)
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KR20040105238A (ko
Inventor
스탠리 에프 와낫
로버트 알. 플래스
조셉 이. 오버랜더
더글라스 맥켄지
홍 쭈앙
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
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Publication of KR20040105238A publication Critical patent/KR20040105238A/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020047016107A 2002-04-11 2003-03-28 용매로서 아세탈 및 케탈을 포함하는 포토레지스트 조성물 Expired - Fee Related KR100869085B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/120,952 2002-04-11
US10/120,952 US6911293B2 (en) 2002-04-11 2002-04-11 Photoresist compositions comprising acetals and ketals as solvents
PCT/EP2003/003255 WO2003085455A2 (en) 2002-04-11 2003-03-28 Photoresist compositions comprising acetals and ketals as solvents

Publications (2)

Publication Number Publication Date
KR20040105238A KR20040105238A (ko) 2004-12-14
KR100869085B1 true KR100869085B1 (ko) 2008-11-18

Family

ID=28790215

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047016107A Expired - Fee Related KR100869085B1 (ko) 2002-04-11 2003-03-28 용매로서 아세탈 및 케탈을 포함하는 포토레지스트 조성물

Country Status (7)

Country Link
US (1) US6911293B2 (enExample)
EP (1) EP1497697B1 (enExample)
JP (1) JP4359151B2 (enExample)
KR (1) KR100869085B1 (enExample)
CN (2) CN1650232A (enExample)
TW (2) TWI318330B (enExample)
WO (1) WO2003085455A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180023249A (ko) * 2016-08-25 2018-03-07 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상표시장치

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KR20030036948A (ko) * 2001-11-01 2003-05-12 삼성전자주식회사 포토레지스트용 노르보넨계 공중합체, 이의 제조방법 및이를 포함하는 포토레지스트 조성물
US7108958B2 (en) * 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
EP1673801B1 (en) * 2003-10-15 2014-04-09 Brewer Science, Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
DE102006006022A1 (de) * 2006-02-08 2007-08-09 Clariant International Limited Verfahren zur Reinigung von Metallteilen
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US20080096785A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue
FR2912414B1 (fr) * 2007-02-13 2012-09-28 Imaje Sa Composition d'encre pour l'impression par jet d'encre.
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
CN101971102B (zh) 2008-01-29 2012-12-12 布鲁尔科技公司 用来通过多次暗视场曝光对硬掩模进行图案化的在线法
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JP5329999B2 (ja) * 2009-01-29 2013-10-30 ＡｚエレクトロニックマテリアルズＩｐ株式会社 パターン形成方法
KR101677058B1 (ko) * 2009-10-13 2016-11-18 금호석유화학 주식회사 폴리아세탈 수지, 그 합성 방법 및 포토레지스트 조성물
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US8853438B2 (en) 2012-11-05 2014-10-07 Dynaloy, Llc Formulations of solutions and processes for forming a substrate including an arsenic dopant
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
US9587136B2 (en) 2013-10-08 2017-03-07 Wisconsin Alumni Research Foundation Block copolymers with high Flory-Huggins interaction parameters for block copolymer lithography
JP6655628B2 (ja) * 2015-11-05 2020-02-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法
CN114730130B (zh) * 2019-11-25 2025-04-18 默克专利股份有限公司 化学增幅型光致抗蚀剂
CN116256945A (zh) * 2023-03-15 2023-06-13 青岛物元技术有限公司 光刻胶材料及其应用

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EP0273026A2 (en) * 1986-12-23 1988-06-29 Shipley Company Inc. Solvents for Photoresist compositions
EP0284868A2 (en) * 1987-03-30 1988-10-05 MicroSi, Inc. (a Delaware corporation) Photoresist compositions
JPH02177031A (ja) * 1988-12-09 1990-07-10 Basf Ag 感放射線混合物
US6238831B1 (en) 1998-06-05 2001-05-29 Kodak Polychrome Graphics Llc Offset printing plates having high print run stability

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EP0273026A2 (en) * 1986-12-23 1988-06-29 Shipley Company Inc. Solvents for Photoresist compositions
EP0284868A2 (en) * 1987-03-30 1988-10-05 MicroSi, Inc. (a Delaware corporation) Photoresist compositions
JPH02177031A (ja) * 1988-12-09 1990-07-10 Basf Ag 感放射線混合物
US6238831B1 (en) 1998-06-05 2001-05-29 Kodak Polychrome Graphics Llc Offset printing plates having high print run stability

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180023249A (ko) * 2016-08-25 2018-03-07 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상표시장치
KR102475604B1 (ko) * 2016-08-25 2022-12-08 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상표시장치

Also Published As

Publication number Publication date
WO2003085455A2 (en) 2003-10-16
US20030194636A1 (en) 2003-10-16
TW201005441A (en) 2010-02-01
CN102520583B (zh) 2014-05-07
TW200405127A (en) 2004-04-01
TWI396939B (zh) 2013-05-21
EP1497697A2 (en) 2005-01-19
CN102520583A (zh) 2012-06-27
JP4359151B2 (ja) 2009-11-04
TWI318330B (en) 2009-12-11
WO2003085455A3 (en) 2004-05-21
EP1497697B1 (en) 2012-08-08
CN1650232A (zh) 2005-08-03
US6911293B2 (en) 2005-06-28
JP2005526989A (ja) 2005-09-08
KR20040105238A (ko) 2004-12-14

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