JP4359151B2 - アセタール及びケタールを溶剤として含むフォトレジスト組成物 - Google Patents

アセタール及びケタールを溶剤として含むフォトレジスト組成物 Download PDF

Info

Publication number
JP4359151B2
JP4359151B2 JP2003582581A JP2003582581A JP4359151B2 JP 4359151 B2 JP4359151 B2 JP 4359151B2 JP 2003582581 A JP2003582581 A JP 2003582581A JP 2003582581 A JP2003582581 A JP 2003582581A JP 4359151 B2 JP4359151 B2 JP 4359151B2
Authority
JP
Japan
Prior art keywords
photoresist
photoresist composition
solvent
composition
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003582581A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005526989A (ja
JP2005526989A5 (enExample
Inventor
ウォナート・スタンレイ・エフ
プラス・ロバート・アール
オーバーランダー・ヨーゼフ・イー
マッケンジー・ダグラス
チャン・ホン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Publication of JP2005526989A publication Critical patent/JP2005526989A/ja
Publication of JP2005526989A5 publication Critical patent/JP2005526989A5/ja
Application granted granted Critical
Publication of JP4359151B2 publication Critical patent/JP4359151B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2003582581A 2002-04-11 2003-03-28 アセタール及びケタールを溶剤として含むフォトレジスト組成物 Expired - Fee Related JP4359151B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/120,952 US6911293B2 (en) 2002-04-11 2002-04-11 Photoresist compositions comprising acetals and ketals as solvents
PCT/EP2003/003255 WO2003085455A2 (en) 2002-04-11 2003-03-28 Photoresist compositions comprising acetals and ketals as solvents

Publications (3)

Publication Number Publication Date
JP2005526989A JP2005526989A (ja) 2005-09-08
JP2005526989A5 JP2005526989A5 (enExample) 2006-04-13
JP4359151B2 true JP4359151B2 (ja) 2009-11-04

Family

ID=28790215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003582581A Expired - Fee Related JP4359151B2 (ja) 2002-04-11 2003-03-28 アセタール及びケタールを溶剤として含むフォトレジスト組成物

Country Status (7)

Country Link
US (1) US6911293B2 (enExample)
EP (1) EP1497697B1 (enExample)
JP (1) JP4359151B2 (enExample)
KR (1) KR100869085B1 (enExample)
CN (2) CN1650232A (enExample)
TW (2) TWI318330B (enExample)
WO (1) WO2003085455A2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030036948A (ko) * 2001-11-01 2003-05-12 삼성전자주식회사 포토레지스트용 노르보넨계 공중합체, 이의 제조방법 및이를 포함하는 포토레지스트 조성물
US7108958B2 (en) * 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
WO2005038878A2 (en) * 2003-10-15 2005-04-28 Brewer Science Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
DE102006006022A1 (de) * 2006-02-08 2007-08-09 Clariant International Limited Verfahren zur Reinigung von Metallteilen
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US20080096785A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue
FR2912414B1 (fr) * 2007-02-13 2012-09-28 Imaje Sa Composition d'encre pour l'impression par jet d'encre.
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
WO2009097436A2 (en) 2008-01-29 2009-08-06 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JP5329999B2 (ja) * 2009-01-29 2013-10-30 ＡｚエレクトロニックマテリアルズＩｐ株式会社 パターン形成方法
KR101677058B1 (ko) * 2009-10-13 2016-11-18 금호석유화학 주식회사 폴리아세탈 수지, 그 합성 방법 및 포토레지스트 조성물
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US8853438B2 (en) 2012-11-05 2014-10-07 Dynaloy, Llc Formulations of solutions and processes for forming a substrate including an arsenic dopant
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
US9587136B2 (en) 2013-10-08 2017-03-07 Wisconsin Alumni Research Foundation Block copolymers with high Flory-Huggins interaction parameters for block copolymer lithography
KR102093677B1 (ko) * 2015-11-05 2020-03-26 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
KR102475604B1 (ko) * 2016-08-25 2022-12-08 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상표시장치
JP7637137B2 (ja) * 2019-11-25 2025-02-27 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 化学増幅型フォトレジスト
CN116256945A (zh) * 2023-03-15 2023-06-13 青岛物元技术有限公司 光刻胶材料及其应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0273026B2 (en) 1986-12-23 2003-08-20 Shipley Company Inc. Solvents for Photoresist compositions
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
DE3841437A1 (de) * 1988-12-09 1990-06-13 Basf Ag Strahlungsempfindliches gemisch
DE4005212A1 (de) * 1990-02-20 1991-08-22 Basf Ag Strahlungsempfindliches gemisch
EP0520654A1 (en) * 1991-06-21 1992-12-30 Hoechst Celanese Corporation Deep UV light sensitive positive photoresist compositions
JPH08297372A (ja) * 1995-04-26 1996-11-12 Minolta Co Ltd 有機感光体
JP3689937B2 (ja) 1995-07-19 2005-08-31 住友化学株式会社 ナフトキノンジアジド系感光剤の製造方法
US6060217A (en) * 1997-09-02 2000-05-09 Kodak Polychrome Graphics Llc Thermal lithographic printing plates
JP4219435B2 (ja) * 1997-12-15 2009-02-04 東京応化工業株式会社 ポリフェノールジエステル化物の製造方法およびポジ型感光性組成物
DE19825244A1 (de) * 1998-06-05 1999-12-16 Kodak Polychrome Graphics Gmbh Offsetdruckplatte mit hoher Auflagenstabilität
US6613494B2 (en) * 2001-03-13 2003-09-02 Kodak Polychrome Graphics Llc Imageable element having a protective overlayer
US6706454B2 (en) 2001-07-05 2004-03-16 Kodak Polychrome Graphics Llc Method for the production of a printing plate using particle growing acceleration by an additive polymer
US6517988B1 (en) * 2001-07-12 2003-02-11 Kodak Polychrome Graphics Llc Radiation-sensitive, positive working coating composition based on carboxylic copolymers
US6645689B2 (en) * 2002-03-13 2003-11-11 Kodak Polychrome Graphics Llc Solvent resistant polymers with improved bakeability features

Also Published As

Publication number Publication date
KR20040105238A (ko) 2004-12-14
TW200405127A (en) 2004-04-01
WO2003085455A2 (en) 2003-10-16
EP1497697A2 (en) 2005-01-19
CN102520583B (zh) 2014-05-07
US6911293B2 (en) 2005-06-28
WO2003085455A3 (en) 2004-05-21
JP2005526989A (ja) 2005-09-08
EP1497697B1 (en) 2012-08-08
TW201005441A (en) 2010-02-01
CN1650232A (zh) 2005-08-03
TWI318330B (en) 2009-12-11
KR100869085B1 (ko) 2008-11-18
TWI396939B (zh) 2013-05-21
US20030194636A1 (en) 2003-10-16
CN102520583A (zh) 2012-06-27

Similar Documents

Publication Publication Date Title
JP4359151B2 (ja) アセタール及びケタールを溶剤として含むフォトレジスト組成物
EP2203783B1 (en) Thick film resists
JP5051395B2 (ja) 厚いフィルムに像を形成するためのフォトレジスト組成物
US20130108956A1 (en) Nanocomposite positive photosensitive composition and use thereof
US6852465B2 (en) Photoresist composition for imaging thick films
US6733949B2 (en) Novolak resin mixtures and photosensitive compositions comprising the same
JP3562673B2 (ja) ポジ型フォトレジスト組成物
JP3076523B2 (ja) ポジ型ホトレジスト組成物
US7524606B2 (en) Nanocomposite photoresist composition for imaging thick films
JP3636503B2 (ja) 感放射線性樹脂組成物
JP2005010486A (ja) レジストパターン形成方法
JP3631289B2 (ja) ポジ型ホトレジスト組成物
HK1079577A (en) Photoresist compositions comprising acetals and ketals as solvents

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050810

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20050810

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060224

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090407

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090605

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090721

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090807

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120814

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130814

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130814

Year of fee payment: 4

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130814

Year of fee payment: 4

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees