TWI318330B - Photoresist compositions comprising acetals and ketals as solvents - Google Patents

Photoresist compositions comprising acetals and ketals as solvents

Info

Publication number
TWI318330B
TWI318330B TW092108231A TW92108231A TWI318330B TW I318330 B TWI318330 B TW I318330B TW 092108231 A TW092108231 A TW 092108231A TW 92108231 A TW92108231 A TW 92108231A TW I318330 B TWI318330 B TW I318330B
Authority
TW
Taiwan
Prior art keywords
ketals
acetals
solvents
photoresist compositions
photoresist
Prior art date
Application number
TW092108231A
Other languages
English (en)
Other versions
TW200405127A (en
Inventor
F Wanat Stanley
E Oberlander Joseph
R Plass Robert
Mckenzie Douglas
Zhuang Hong
Original Assignee
Clariant Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Int Ltd filed Critical Clariant Int Ltd
Publication of TW200405127A publication Critical patent/TW200405127A/zh
Application granted granted Critical
Publication of TWI318330B publication Critical patent/TWI318330B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW092108231A 2002-04-11 2003-04-10 Photoresist compositions comprising acetals and ketals as solvents TWI318330B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/120,952 US6911293B2 (en) 2002-04-11 2002-04-11 Photoresist compositions comprising acetals and ketals as solvents

Publications (2)

Publication Number Publication Date
TW200405127A TW200405127A (en) 2004-04-01
TWI318330B true TWI318330B (en) 2009-12-11

Family

ID=28790215

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098131968A TWI396939B (zh) 2002-04-11 2003-04-10 含縮醛及縮酮作為溶劑之光阻組合物
TW092108231A TWI318330B (en) 2002-04-11 2003-04-10 Photoresist compositions comprising acetals and ketals as solvents

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW098131968A TWI396939B (zh) 2002-04-11 2003-04-10 含縮醛及縮酮作為溶劑之光阻組合物

Country Status (7)

Country Link
US (1) US6911293B2 (zh)
EP (1) EP1497697B1 (zh)
JP (1) JP4359151B2 (zh)
KR (1) KR100869085B1 (zh)
CN (2) CN102520583B (zh)
TW (2) TWI396939B (zh)
WO (1) WO2003085455A2 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030036948A (ko) * 2001-11-01 2003-05-12 삼성전자주식회사 포토레지스트용 노르보넨계 공중합체, 이의 제조방법 및이를 포함하는 포토레지스트 조성물
US7108958B2 (en) * 2002-07-31 2006-09-19 Brewer Science Inc. Photosensitive bottom anti-reflective coatings
KR101189397B1 (ko) * 2003-10-15 2012-10-11 브레우어 사이언스 인코포레이션 비아-퍼스트 듀얼 다마신 적용예에서 사용되는 현상제에 용해성인 물질 및 상기 물질 사용 방법
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
DE102006006022A1 (de) * 2006-02-08 2007-08-09 Clariant International Limited Verfahren zur Reinigung von Metallteilen
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US20080096785A1 (en) * 2006-10-19 2008-04-24 Air Products And Chemicals, Inc. Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue
FR2912414B1 (fr) * 2007-02-13 2012-09-28 Imaje Sa Composition d'encre pour l'impression par jet d'encre.
US7709178B2 (en) * 2007-04-17 2010-05-04 Brewer Science Inc. Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride
US8133659B2 (en) 2008-01-29 2012-03-13 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
TWI450052B (zh) * 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JP5329999B2 (ja) * 2009-01-29 2013-10-30 ＡｚエレクトロニックマテリアルズＩｐ株式会社 パターン形成方法
KR101677058B1 (ko) * 2009-10-13 2016-11-18 금호석유화학 주식회사 폴리아세탈 수지, 그 합성 방법 및 포토레지스트 조성물
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US8853438B2 (en) 2012-11-05 2014-10-07 Dynaloy, Llc Formulations of solutions and processes for forming a substrate including an arsenic dopant
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
US9587136B2 (en) 2013-10-08 2017-03-07 Wisconsin Alumni Research Foundation Block copolymers with high Flory-Huggins interaction parameters for block copolymer lithography
CN108351592A (zh) * 2015-11-05 2018-07-31 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、图案形成方法及电子器件的制造方法
KR102475604B1 (ko) * 2016-08-25 2022-12-08 동우 화인켐 주식회사 착색 감광성 수지 조성물, 이를 이용하여 제조된 컬러필터 및 화상표시장치
WO2021105054A1 (en) * 2019-11-25 2021-06-03 Merck Patent Gmbh Chemically amplified photoresist

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0718693B1 (en) 1986-12-23 2003-07-02 Shipley Company Inc. Photoresist compositions and components
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
DE3841437A1 (de) * 1988-12-09 1990-06-13 Basf Ag Strahlungsempfindliches gemisch
DE4005212A1 (de) 1990-02-20 1991-08-22 Basf Ag Strahlungsempfindliches gemisch
EP0520654A1 (en) * 1991-06-21 1992-12-30 Hoechst Celanese Corporation Deep UV light sensitive positive photoresist compositions
JPH08297372A (ja) * 1995-04-26 1996-11-12 Minolta Co Ltd 有機感光体
JP3689937B2 (ja) 1995-07-19 2005-08-31 住友化学株式会社 ナフトキノンジアジド系感光剤の製造方法
US6060217A (en) * 1997-09-02 2000-05-09 Kodak Polychrome Graphics Llc Thermal lithographic printing plates
JP4219435B2 (ja) * 1997-12-15 2009-02-04 東京応化工業株式会社 ポリフェノールジエステル化物の製造方法およびポジ型感光性組成物
DE19825244A1 (de) 1998-06-05 1999-12-16 Kodak Polychrome Graphics Gmbh Offsetdruckplatte mit hoher Auflagenstabilität
US6613494B2 (en) * 2001-03-13 2003-09-02 Kodak Polychrome Graphics Llc Imageable element having a protective overlayer
US6706454B2 (en) * 2001-07-05 2004-03-16 Kodak Polychrome Graphics Llc Method for the production of a printing plate using particle growing acceleration by an additive polymer
US6517988B1 (en) * 2001-07-12 2003-02-11 Kodak Polychrome Graphics Llc Radiation-sensitive, positive working coating composition based on carboxylic copolymers
US6645689B2 (en) * 2002-03-13 2003-11-11 Kodak Polychrome Graphics Llc Solvent resistant polymers with improved bakeability features

Also Published As

Publication number Publication date
TWI396939B (zh) 2013-05-21
JP2005526989A (ja) 2005-09-08
EP1497697A2 (en) 2005-01-19
KR20040105238A (ko) 2004-12-14
CN1650232A (zh) 2005-08-03
KR100869085B1 (ko) 2008-11-18
EP1497697B1 (en) 2012-08-08
CN102520583B (zh) 2014-05-07
WO2003085455A3 (en) 2004-05-21
WO2003085455A2 (en) 2003-10-16
TW200405127A (en) 2004-04-01
TW201005441A (en) 2010-02-01
US20030194636A1 (en) 2003-10-16
US6911293B2 (en) 2005-06-28
JP4359151B2 (ja) 2009-11-04
CN102520583A (zh) 2012-06-27

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MM4A Annulment or lapse of patent due to non-payment of fees