CN103376660A - 用于负显影的含保护羟基的光致抗蚀剂组合物和使用其的图案形成方法 - Google Patents
用于负显影的含保护羟基的光致抗蚀剂组合物和使用其的图案形成方法 Download PDFInfo
- Publication number
- CN103376660A CN103376660A CN2013101408333A CN201310140833A CN103376660A CN 103376660 A CN103376660 A CN 103376660A CN 2013101408333 A CN2013101408333 A CN 2013101408333A CN 201310140833 A CN201310140833 A CN 201310140833A CN 103376660 A CN103376660 A CN 103376660A
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- China
- Prior art keywords
- methyl
- corrosion
- photo
- agent composition
- resisting agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/457,735 US8846295B2 (en) | 2012-04-27 | 2012-04-27 | Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof |
US13/457,735 | 2012-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103376660A true CN103376660A (zh) | 2013-10-30 |
CN103376660B CN103376660B (zh) | 2017-12-05 |
Family
ID=49461984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310140833.3A Expired - Fee Related CN103376660B (zh) | 2012-04-27 | 2013-04-22 | 用于负显影的含保护羟基的光致抗蚀剂组合物和使用其的图案形成方法 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8846295B2 (zh) |
CN (1) | CN103376660B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107533288A (zh) * | 2015-05-28 | 2018-01-02 | 英特尔公司 | 用于解耦合光致抗蚀剂的扩散和溶解性切换机制的手段 |
JP2018173607A (ja) * | 2017-03-31 | 2018-11-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
CN110515272A (zh) * | 2018-05-21 | 2019-11-29 | 信越化学工业株式会社 | 图案形成方法 |
CN110515266A (zh) * | 2018-05-21 | 2019-11-29 | 信越化学工业株式会社 | 图案形成方法 |
CN110997734A (zh) * | 2017-08-24 | 2020-04-10 | 国际商业机器公司 | 用于极紫外光刻的聚合物刷 |
US10921711B2 (en) | 2017-03-31 | 2021-02-16 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
CN112987515A (zh) * | 2019-12-02 | 2021-06-18 | 台湾积体电路制造股份有限公司 | 制造半导体器件的方法和半导体器件制造工具 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6472129B2 (ja) * | 2013-12-03 | 2019-02-20 | Hoya株式会社 | 転写用マスクの製造方法および現像液 |
JP6220695B2 (ja) * | 2014-02-18 | 2017-10-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法及び電子デバイスの製造方法 |
JP6237551B2 (ja) * | 2014-09-18 | 2017-11-29 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
US9563122B2 (en) | 2015-04-28 | 2017-02-07 | International Business Machines Corporation | Method to harden photoresist for directed self-assembly processes |
US9659824B2 (en) | 2015-04-28 | 2017-05-23 | International Business Machines Corporation | Graphoepitaxy directed self-assembly process for semiconductor fin formation |
KR102619528B1 (ko) | 2015-12-09 | 2023-12-29 | 삼성전자주식회사 | 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법 |
US10649339B2 (en) * | 2016-12-13 | 2020-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Resist material and method for forming semiconductor structure using resist layer |
US11550220B2 (en) * | 2019-10-31 | 2023-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Negative tone photoresist for EUV lithography |
Citations (4)
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US6114082A (en) * | 1996-09-16 | 2000-09-05 | International Business Machines Corporation | Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same |
WO2011118853A1 (en) * | 2010-03-26 | 2011-09-29 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same |
WO2011149035A1 (en) * | 2010-05-25 | 2011-12-01 | Fujifilm Corporation | Pattern forming method and actinic-ray- or radiation-sensitive resin composition |
CN102346371A (zh) * | 2010-05-31 | 2012-02-08 | 罗门哈斯电子材料有限公司 | 光致抗蚀剂组合物以及形成光刻图案的方法 |
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US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US5258257A (en) | 1991-09-23 | 1993-11-02 | Shipley Company Inc. | Radiation sensitive compositions comprising polymer having acid labile groups |
EP0605089B1 (en) | 1992-11-03 | 1999-01-07 | International Business Machines Corporation | Photoresist composition |
JP2654339B2 (ja) | 1992-11-24 | 1997-09-17 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 感光性レジスト組成物及び基板上にレジスト像を形成する方法 |
US6232417B1 (en) | 1996-03-07 | 2001-05-15 | The B. F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
US6037107A (en) | 1997-08-28 | 2000-03-14 | Shipley Company, L.L.C. | Photoresist compositions |
KR100520183B1 (ko) | 1999-08-23 | 2005-10-10 | 주식회사 하이닉스반도체 | 두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체 |
US6818376B2 (en) | 1999-08-23 | 2004-11-16 | Hynix Semiconductor Inc. | Cross-linker monomer comprising double bond and photoresist copolymer containing the same |
US6309797B1 (en) | 2000-04-26 | 2001-10-30 | Spectra Group Limited, Inc. | Selectively colorable polymerizable compositions |
CN1253485C (zh) | 2001-12-12 | 2006-04-26 | 住友电木株式会社 | 聚合物组合物及其用途 |
US6806026B2 (en) * | 2002-05-31 | 2004-10-19 | International Business Machines Corporation | Photoresist composition |
JP4410471B2 (ja) | 2003-01-10 | 2010-02-03 | セントラル硝子株式会社 | 含フッ素重合性単量体、含フッ素高分子化合物、それらを用いたレジスト材料 |
US7081326B2 (en) | 2004-03-11 | 2006-07-25 | International Business Machines Corporation | Negative photoresist and method of using thereof |
US7217496B2 (en) | 2004-11-12 | 2007-05-15 | International Business Machines Corporation | Fluorinated photoresist materials with improved etch resistant properties |
JP2007101715A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | パターン形成方法及びそれに用いるレジスト組成物 |
US7569326B2 (en) * | 2006-10-27 | 2009-08-04 | Shin-Etsu Chemical Co., Ltd. | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process |
US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
JP4562784B2 (ja) | 2007-04-13 | 2010-10-13 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液 |
WO2008140119A1 (ja) | 2007-05-15 | 2008-11-20 | Fujifilm Corporation | パターン形成方法 |
JP4617337B2 (ja) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
US7851140B2 (en) | 2007-06-12 | 2010-12-14 | Fujifilm Corporation | Resist composition for negative tone development and pattern forming method using the same |
JP4590431B2 (ja) | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
JP5019071B2 (ja) * | 2007-09-05 | 2012-09-05 | 信越化学工業株式会社 | 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
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JP5381298B2 (ja) | 2008-05-12 | 2014-01-08 | 信越化学工業株式会社 | レジスト保護膜材料及びパターン形成方法 |
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JP5708082B2 (ja) | 2010-03-24 | 2015-04-30 | 信越化学工業株式会社 | パターン形成方法及びネガ型レジスト組成物 |
JP5387601B2 (ja) | 2010-03-24 | 2014-01-15 | 信越化学工業株式会社 | アセタール化合物、高分子化合物、レジスト材料及びパターン形成方法 |
US20110269071A1 (en) * | 2010-04-28 | 2011-11-03 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, chemical amplification resist composition, and resist film and pattern forming method using the composition |
JP5729171B2 (ja) | 2010-07-06 | 2015-06-03 | 信越化学工業株式会社 | パターン形成方法 |
JP5533797B2 (ja) | 2010-07-08 | 2014-06-25 | 信越化学工業株式会社 | パターン形成方法 |
-
2012
- 2012-04-27 US US13/457,735 patent/US8846295B2/en not_active Expired - Fee Related
-
2013
- 2013-04-22 CN CN201310140833.3A patent/CN103376660B/zh not_active Expired - Fee Related
- 2013-11-15 US US14/081,057 patent/US20140072915A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6114082A (en) * | 1996-09-16 | 2000-09-05 | International Business Machines Corporation | Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same |
WO2011118853A1 (en) * | 2010-03-26 | 2011-09-29 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same |
WO2011149035A1 (en) * | 2010-05-25 | 2011-12-01 | Fujifilm Corporation | Pattern forming method and actinic-ray- or radiation-sensitive resin composition |
CN102346371A (zh) * | 2010-05-31 | 2012-02-08 | 罗门哈斯电子材料有限公司 | 光致抗蚀剂组合物以及形成光刻图案的方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107533288A (zh) * | 2015-05-28 | 2018-01-02 | 英特尔公司 | 用于解耦合光致抗蚀剂的扩散和溶解性切换机制的手段 |
CN107533288B (zh) * | 2015-05-28 | 2021-10-19 | 英特尔公司 | 用于解耦合光致抗蚀剂的扩散和溶解性切换机制的手段 |
JP2018173607A (ja) * | 2017-03-31 | 2018-11-08 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
US10921711B2 (en) | 2017-03-31 | 2021-02-16 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
CN110997734A (zh) * | 2017-08-24 | 2020-04-10 | 国际商业机器公司 | 用于极紫外光刻的聚合物刷 |
CN110515272A (zh) * | 2018-05-21 | 2019-11-29 | 信越化学工业株式会社 | 图案形成方法 |
CN110515266A (zh) * | 2018-05-21 | 2019-11-29 | 信越化学工业株式会社 | 图案形成方法 |
CN110515266B (zh) * | 2018-05-21 | 2023-06-23 | 信越化学工业株式会社 | 图案形成方法 |
CN110515272B (zh) * | 2018-05-21 | 2023-06-23 | 信越化学工业株式会社 | 图案形成方法 |
CN112987515A (zh) * | 2019-12-02 | 2021-06-18 | 台湾积体电路制造股份有限公司 | 制造半导体器件的方法和半导体器件制造工具 |
Also Published As
Publication number | Publication date |
---|---|
CN103376660B (zh) | 2017-12-05 |
US20140072915A1 (en) | 2014-03-13 |
US8846295B2 (en) | 2014-09-30 |
US20130288178A1 (en) | 2013-10-31 |
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Effective date of registration: 20171207 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171207 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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