JP2005526412A5 - - Google Patents

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Publication number
JP2005526412A5
JP2005526412A5 JP2003518034A JP2003518034A JP2005526412A5 JP 2005526412 A5 JP2005526412 A5 JP 2005526412A5 JP 2003518034 A JP2003518034 A JP 2003518034A JP 2003518034 A JP2003518034 A JP 2003518034A JP 2005526412 A5 JP2005526412 A5 JP 2005526412A5
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JP
Japan
Prior art keywords
transistor
source
reference voltage
gate
current mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003518034A
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English (en)
Japanese (ja)
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JP4087336B2 (ja
JP2005526412A (ja
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Publication date
Priority claimed from US09/918,015 external-priority patent/US6492874B1/en
Application filed filed Critical
Publication of JP2005526412A publication Critical patent/JP2005526412A/ja
Publication of JP2005526412A5 publication Critical patent/JP2005526412A5/ja
Application granted granted Critical
Publication of JP4087336B2 publication Critical patent/JP4087336B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003518034A 2001-07-30 2002-06-26 能動バイアス回路 Expired - Fee Related JP4087336B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/918,015 US6492874B1 (en) 2001-07-30 2001-07-30 Active bias circuit
PCT/US2002/020309 WO2003012980A1 (en) 2001-07-30 2002-06-26 Active bias circuit

Publications (3)

Publication Number Publication Date
JP2005526412A JP2005526412A (ja) 2005-09-02
JP2005526412A5 true JP2005526412A5 (enExample) 2006-01-05
JP4087336B2 JP4087336B2 (ja) 2008-05-21

Family

ID=25439654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003518034A Expired - Fee Related JP4087336B2 (ja) 2001-07-30 2002-06-26 能動バイアス回路

Country Status (5)

Country Link
US (1) US6492874B1 (enExample)
JP (1) JP4087336B2 (enExample)
KR (1) KR100830361B1 (enExample)
CN (1) CN100502230C (enExample)
WO (1) WO2003012980A1 (enExample)

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US6946912B2 (en) * 2003-10-21 2005-09-20 Northrop Grumman Corporation MMIC distributed amplifier gate control using active bias
US6956437B2 (en) * 2003-12-23 2005-10-18 Agere Systems Inc. Metal-oxide-semiconductor device having integrated bias circuit
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US7057462B2 (en) * 2004-05-28 2006-06-06 Freescale Semiconductor, Inc. Temperature compensated on-chip bias circuit for linear RF HBT power amplifiers
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TW200637139A (en) * 2005-04-06 2006-10-16 Richwave Technology Corp Adaptive linear biasing circuit
US20070030064A1 (en) * 2005-08-03 2007-02-08 Yinglei Yu Integrated laterally diffused metal oxide semiconductor power detector
US7274258B2 (en) * 2005-09-08 2007-09-25 Industrial Technology Research Institute Dynamic bias circuit for a radio-frequency amplifier
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US7365604B2 (en) * 2005-12-16 2008-04-29 Mediatek Inc. RF amplifier with a bias boosting scheme
JP2007329831A (ja) * 2006-06-09 2007-12-20 Matsushita Electric Ind Co Ltd 増幅回路
US7446612B2 (en) * 2006-09-08 2008-11-04 Skyworks Solutions, Inc. Amplifier feedback and bias configuration
US7869775B2 (en) 2006-10-30 2011-01-11 Skyworks Solutions, Inc. Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
JP2010514281A (ja) * 2006-12-21 2010-04-30 イセラ・カナダ・ユーエルシー 電流操作を基にした高周波可変利得増幅器のための電流制御されたバイアシング
US8093952B2 (en) * 2006-12-29 2012-01-10 Broadcom Corporation Method and system for precise current matching in deep sub-micron technology
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ES2391231T3 (es) * 2007-07-03 2012-11-22 St-Ericsson Sa Dispositivo electrónico y un método para polarizar un transistor MOS en un circuito integrado
JP2009165100A (ja) * 2007-12-11 2009-07-23 Hitachi Metals Ltd 高周波増幅器及び高周波モジュール並びにそれらを用いた移動体無線機
JP5107272B2 (ja) * 2009-01-15 2012-12-26 株式会社東芝 温度補償回路
US8710812B1 (en) * 2009-01-27 2014-04-29 Xilinx, Inc. Regulating a supply voltage provided to a load circuit
US9166533B2 (en) 2009-07-30 2015-10-20 Qualcomm Incorporated Bias current monitor and control mechanism for amplifiers
CN102006017B (zh) * 2010-12-02 2013-11-06 无锡中普微电子有限公司 偏置电路及其功率放大电路
CN102638230B (zh) * 2011-02-10 2015-08-05 启碁科技股份有限公司 温度补偿装置及卫星信号接收系统
US8665015B1 (en) * 2012-08-17 2014-03-04 Cambridge Silicon Radio Limited Power amplifier circuit
JP6043599B2 (ja) * 2012-11-15 2016-12-14 サムソン エレクトロ−メカニックス カンパニーリミテッド． バイアス回路、および増幅装置
JP5821876B2 (ja) * 2013-03-05 2015-11-24 株式会社村田製作所 電力増幅モジュール
EP2779452B1 (en) * 2013-03-13 2018-08-15 Nxp B.V. Switchable current source circuit and method
EP2922199B1 (en) * 2014-03-17 2020-05-13 Nxp B.V. A bias circuit for a transistor amplifier
US9780736B1 (en) * 2016-03-30 2017-10-03 Synaptics Incorporated Temperature compensated offset cancellation for high-speed amplifiers
US10224918B2 (en) * 2016-12-07 2019-03-05 Infineon Technologies Americas Corp. Active gate bias driver
US11054447B2 (en) * 2018-08-13 2021-07-06 Avago Technologies International Sales Pte. Limited System and method for controlling the impact of process and temperature in passive signal detector for automotive ethernet
US10615893B1 (en) * 2018-09-27 2020-04-07 Intel Corporation Transmitter with feedback control
KR102262903B1 (ko) 2019-04-18 2021-06-09 삼성전기주식회사 듀얼 보상 기능을 갖는 바이어스 회로 및 증폭 장치
JP7567909B2 (ja) * 2020-06-11 2024-10-16 株式会社ソシオネクスト 増幅回路、差動増幅回路、受信回路及び半導体集積回路
EP4020798A1 (en) 2020-12-23 2022-06-29 Carrier Corporation Oscillator circuit comprising surface integrated waveguide resonator

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