JP4087336B2 - 能動バイアス回路 - Google Patents

能動バイアス回路 Download PDF

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Publication number
JP4087336B2
JP4087336B2 JP2003518034A JP2003518034A JP4087336B2 JP 4087336 B2 JP4087336 B2 JP 4087336B2 JP 2003518034 A JP2003518034 A JP 2003518034A JP 2003518034 A JP2003518034 A JP 2003518034A JP 4087336 B2 JP4087336 B2 JP 4087336B2
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JP
Japan
Prior art keywords
transistor
source
circuit
power amplifier
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003518034A
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English (en)
Japanese (ja)
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JP2005526412A (ja
JP2005526412A5 (enExample
Inventor
デイビッド シー、チューミン
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
JP2003518034A 2001-07-30 2002-06-26 能動バイアス回路 Expired - Fee Related JP4087336B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/918,015 US6492874B1 (en) 2001-07-30 2001-07-30 Active bias circuit
PCT/US2002/020309 WO2003012980A1 (en) 2001-07-30 2002-06-26 Active bias circuit

Publications (3)

Publication Number Publication Date
JP2005526412A JP2005526412A (ja) 2005-09-02
JP2005526412A5 JP2005526412A5 (enExample) 2006-01-05
JP4087336B2 true JP4087336B2 (ja) 2008-05-21

Family

ID=25439654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003518034A Expired - Fee Related JP4087336B2 (ja) 2001-07-30 2002-06-26 能動バイアス回路

Country Status (5)

Country Link
US (1) US6492874B1 (enExample)
JP (1) JP4087336B2 (enExample)
KR (1) KR100830361B1 (enExample)
CN (1) CN100502230C (enExample)
WO (1) WO2003012980A1 (enExample)

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US6831517B1 (en) * 2002-12-23 2004-12-14 Intersil Americas, Inc. Bias-management system and method for programmable RF power amplifier
US6864748B2 (en) * 2003-01-31 2005-03-08 Lsi Logic Corporation Differential current amplifier with common mode rejection and high frequency boost
JP2004274433A (ja) * 2003-03-10 2004-09-30 Mitsubishi Electric Corp 高周波集積回路装置
US6946912B2 (en) * 2003-10-21 2005-09-20 Northrop Grumman Corporation MMIC distributed amplifier gate control using active bias
US6956437B2 (en) * 2003-12-23 2005-10-18 Agere Systems Inc. Metal-oxide-semiconductor device having integrated bias circuit
JP4569165B2 (ja) * 2004-05-13 2010-10-27 ソニー株式会社 バイアス回路およびこれを有する増幅回路ならびに通信装置
US7057462B2 (en) * 2004-05-28 2006-06-06 Freescale Semiconductor, Inc. Temperature compensated on-chip bias circuit for linear RF HBT power amplifiers
KR100605258B1 (ko) * 2005-02-28 2006-07-31 삼성전자주식회사 초 저전력 소모 특성을 갖는 기준전압 발생회로
TW200637139A (en) * 2005-04-06 2006-10-16 Richwave Technology Corp Adaptive linear biasing circuit
US20070030064A1 (en) * 2005-08-03 2007-02-08 Yinglei Yu Integrated laterally diffused metal oxide semiconductor power detector
US7274258B2 (en) * 2005-09-08 2007-09-25 Industrial Technology Research Institute Dynamic bias circuit for a radio-frequency amplifier
EP1943678A1 (fr) 2005-11-04 2008-07-16 Thomson Licensing Élement electro-optique integrant une diode organique electroluminescente et un transistor organique de modulation de cette diode.
US7365604B2 (en) * 2005-12-16 2008-04-29 Mediatek Inc. RF amplifier with a bias boosting scheme
JP2007329831A (ja) * 2006-06-09 2007-12-20 Matsushita Electric Ind Co Ltd 増幅回路
US7446612B2 (en) * 2006-09-08 2008-11-04 Skyworks Solutions, Inc. Amplifier feedback and bias configuration
US7869775B2 (en) 2006-10-30 2011-01-11 Skyworks Solutions, Inc. Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
JP2010514281A (ja) * 2006-12-21 2010-04-30 イセラ・カナダ・ユーエルシー 電流操作を基にした高周波可変利得増幅器のための電流制御されたバイアシング
US8093952B2 (en) * 2006-12-29 2012-01-10 Broadcom Corporation Method and system for precise current matching in deep sub-micron technology
JP4271708B2 (ja) * 2007-02-01 2009-06-03 シャープ株式会社 電力増幅器、およびそれを備えた多段増幅回路
ES2391231T3 (es) * 2007-07-03 2012-11-22 St-Ericsson Sa Dispositivo electrónico y un método para polarizar un transistor MOS en un circuito integrado
JP2009165100A (ja) * 2007-12-11 2009-07-23 Hitachi Metals Ltd 高周波増幅器及び高周波モジュール並びにそれらを用いた移動体無線機
JP5107272B2 (ja) * 2009-01-15 2012-12-26 株式会社東芝 温度補償回路
US8710812B1 (en) * 2009-01-27 2014-04-29 Xilinx, Inc. Regulating a supply voltage provided to a load circuit
US9166533B2 (en) 2009-07-30 2015-10-20 Qualcomm Incorporated Bias current monitor and control mechanism for amplifiers
CN102006017B (zh) * 2010-12-02 2013-11-06 无锡中普微电子有限公司 偏置电路及其功率放大电路
CN102638230B (zh) * 2011-02-10 2015-08-05 启碁科技股份有限公司 温度补偿装置及卫星信号接收系统
US8665015B1 (en) * 2012-08-17 2014-03-04 Cambridge Silicon Radio Limited Power amplifier circuit
JP6043599B2 (ja) * 2012-11-15 2016-12-14 サムソン エレクトロ−メカニックス カンパニーリミテッド． バイアス回路、および増幅装置
JP5821876B2 (ja) * 2013-03-05 2015-11-24 株式会社村田製作所 電力増幅モジュール
EP2779452B1 (en) * 2013-03-13 2018-08-15 Nxp B.V. Switchable current source circuit and method
EP2922199B1 (en) * 2014-03-17 2020-05-13 Nxp B.V. A bias circuit for a transistor amplifier
US9780736B1 (en) * 2016-03-30 2017-10-03 Synaptics Incorporated Temperature compensated offset cancellation for high-speed amplifiers
US10224918B2 (en) * 2016-12-07 2019-03-05 Infineon Technologies Americas Corp. Active gate bias driver
US11054447B2 (en) * 2018-08-13 2021-07-06 Avago Technologies International Sales Pte. Limited System and method for controlling the impact of process and temperature in passive signal detector for automotive ethernet
US10615893B1 (en) * 2018-09-27 2020-04-07 Intel Corporation Transmitter with feedback control
KR102262903B1 (ko) 2019-04-18 2021-06-09 삼성전기주식회사 듀얼 보상 기능을 갖는 바이어스 회로 및 증폭 장치
JP7567909B2 (ja) * 2020-06-11 2024-10-16 株式会社ソシオネクスト 増幅回路、差動増幅回路、受信回路及び半導体集積回路
EP4020798A1 (en) 2020-12-23 2022-06-29 Carrier Corporation Oscillator circuit comprising surface integrated waveguide resonator

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US3995228A (en) 1975-09-26 1976-11-30 Threshold Corporation Active bias circuit for operating push-pull amplifiers in class A mode
US4220930A (en) 1978-12-26 1980-09-02 Rca Corporation Quasi-linear amplifier with feedback-controlled idling currents
US4789842A (en) 1987-11-23 1988-12-06 Jiri Naxera Composite transistor device with over-current protection
FR2623951B1 (fr) * 1987-11-27 1990-03-09 Thomson Hybrides Microondes Amplificateur lineaire hyperfrequence a tres large bande passante
US4975632A (en) 1989-03-29 1990-12-04 Texas Instruments Incorporated Stable bias current source
US5469111A (en) 1994-08-24 1995-11-21 National Semiconductor Corporation Circuit for generating a process variation insensitive reference bias current
US5570065A (en) 1994-08-26 1996-10-29 Motorola, Inc. Active bias for radio frequency power amplifier
US5608353A (en) 1995-03-29 1997-03-04 Rf Micro Devices, Inc. HBT power amplifier
JP3039611B2 (ja) * 1995-05-26 2000-05-08 日本電気株式会社 カレントミラー回路
US5689211A (en) 1996-02-14 1997-11-18 Lucent Technologies Inc. Quiescent current control for the output stage of an amplifier
US5724004A (en) * 1996-06-13 1998-03-03 Motorola, Inc. Voltage bias and temperature compensation circuit for radio frequency power amplifier
US5986508A (en) 1996-08-26 1999-11-16 Nevin; Larry J. Bias concept for intrinsic gain stabilization over temperature
US5854578A (en) 1997-09-15 1998-12-29 Motorola, Inc. Active circuit having a temperature stable bias
US5949274A (en) 1997-09-22 1999-09-07 Atmel Corporation High impedance bias circuit for AC signal amplifiers
JP4158214B2 (ja) 1997-10-31 2008-10-01 沖電気工業株式会社 半導体集積回路
KR100272508B1 (ko) 1997-12-12 2000-11-15 김영환 내부전압(vdd) 발생회로
FI105611B (fi) 1998-03-13 2000-09-15 Nokia Mobile Phones Ltd Radiotajuusvahvistimet
US6091279A (en) 1998-04-13 2000-07-18 Lucent Technologies, Inc. Temperature compensation of LDMOS devices
US6046642A (en) 1998-09-08 2000-04-04 Motorola, Inc. Amplifier with active bias compensation and method for adjusting quiescent current
US6087820A (en) 1999-03-09 2000-07-11 Siemens Aktiengesellschaft Current source
IT1313384B1 (it) * 1999-04-28 2002-07-23 St Microelectronics Srl Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut
US6313705B1 (en) * 1999-12-20 2001-11-06 Rf Micro Devices, Inc. Bias network for high efficiency RF linear power amplifier
US6300837B1 (en) * 2000-03-28 2001-10-09 Philips Electronics North America Corporation Dynamic bias boosting circuit for a power amplifier
US6259324B1 (en) 2000-06-23 2001-07-10 International Business Machines Corporation Active bias network circuit for radio frequency amplifier

Also Published As

Publication number Publication date
WO2003012980A1 (en) 2003-02-13
CN100502230C (zh) 2009-06-17
US6492874B1 (en) 2002-12-10
JP2005526412A (ja) 2005-09-02
KR20040028963A (ko) 2004-04-03
KR100830361B1 (ko) 2008-05-20
CN1537358A (zh) 2004-10-13

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