JP2005518672A - 高くなったガードリングを有するパワーＳｉＣデバイス - Google Patents

高くなったガードリングを有するパワーＳｉＣデバイス Download PDF

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Publication number
JP2005518672A
JP2005518672A JP2003572069A JP2003572069A JP2005518672A JP 2005518672 A JP2005518672 A JP 2005518672A JP 2003572069 A JP2003572069 A JP 2003572069A JP 2003572069 A JP2003572069 A JP 2003572069A JP 2005518672 A JP2005518672 A JP 2005518672A
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sic
atoms
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junction
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Japanese (ja)
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JP2005518672A5 (enExample
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サンキン，イーゴリ
デュフレーヌ，ジャンナ・ビー
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Semisouth Laboratories Inc
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Semisouth Laboratories Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures

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  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2003572069A 2002-02-22 2003-02-21 高くなったガードリングを有するパワーＳｉＣデバイス Pending JP2005518672A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/079,892 US6693308B2 (en) 2002-02-22 2002-02-22 Power SiC devices having raised guard rings
PCT/US2003/005156 WO2003073471A2 (en) 2002-02-22 2003-02-21 POWER SiC DEVICES HAVING RAISED GUARD RINGS

Publications (2)

Publication Number Publication Date
JP2005518672A true JP2005518672A (ja) 2005-06-23
JP2005518672A5 JP2005518672A5 (enExample) 2006-04-06

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JP2003572069A Pending JP2005518672A (ja) 2002-02-22 2003-02-21 高くなったガードリングを有するパワーＳｉＣデバイス

Country Status (5)

Country Link
US (1) US6693308B2 (enExample)
EP (1) EP1485942B1 (enExample)
JP (1) JP2005518672A (enExample)
AU (1) AU2003230555A1 (enExample)
WO (1) WO2003073471A2 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173705A (ja) * 2005-12-26 2007-07-05 Toyota Central Res & Dev Lab Inc 窒化物半導体装置
JP2008177369A (ja) * 2007-01-18 2008-07-31 Sumitomo Electric Ind Ltd ショットキバリアダイオード
JP2011003727A (ja) * 2009-06-18 2011-01-06 Fuji Electric Systems Co Ltd 半導体装置およびその製造方法
WO2013021636A1 (ja) * 2011-08-10 2013-02-14 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2014041920A (ja) * 2012-08-22 2014-03-06 Rohm Co Ltd 半導体装置
JP2015061065A (ja) * 2013-09-20 2015-03-30 株式会社東芝 半導体装置およびその製造方法
US9577118B2 (en) 2011-07-28 2017-02-21 Rohm Co., Ltd. Semiconductor device
JP2021022745A (ja) * 2015-05-21 2021-02-18 パナソニック株式会社 窒化物半導体装置

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2816113A1 (fr) * 2000-10-31 2002-05-03 St Microelectronics Sa Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky
WO2003092078A1 (fr) * 2002-04-25 2003-11-06 Sanken Electric Co., Ltd. Element a semiconducteur et procede de fabrication
WO2005119793A2 (en) * 2004-05-28 2005-12-15 Caracal, Inc. Silicon carbide schottky diodes and fabrication method
US7105875B2 (en) * 2004-06-03 2006-09-12 Wide Bandgap, Llc Lateral power diodes
CA2576960A1 (en) * 2004-07-08 2007-01-04 Semisouth Laboratories, Inc. Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
US7834376B2 (en) * 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7449762B1 (en) 2006-04-07 2008-11-11 Wide Bandgap Llc Lateral epitaxial GaN metal insulator semiconductor field effect transistor
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US7372087B2 (en) * 2006-06-01 2008-05-13 Northrop Grumman Corporation Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
US7821097B2 (en) * 2006-06-05 2010-10-26 International Business Machines Corporation Lateral passive device having dual annular electrodes
US7741657B2 (en) * 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) * 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode
US9627552B2 (en) * 2006-07-31 2017-04-18 Vishay-Siliconix Molybdenum barrier metal for SiC Schottky diode and process of manufacture
JP2008085187A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
US7825487B2 (en) * 2008-09-30 2010-11-02 Northrop Grumman Systems Corporation Guard ring structures and method of fabricating thereof
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US20120007097A1 (en) * 2010-07-08 2012-01-12 Intersil Americas Inc. Schottky diode with combined field plate and guard ring
US9396947B2 (en) * 2011-08-25 2016-07-19 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9312133B2 (en) 2011-08-25 2016-04-12 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9378955B2 (en) * 2011-08-25 2016-06-28 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9378956B2 (en) 2011-08-25 2016-06-28 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US8871600B2 (en) 2011-11-11 2014-10-28 International Business Machines Corporation Schottky barrier diodes with a guard ring formed by selective epitaxy
US8921893B2 (en) * 2011-12-01 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit structure having islands between source and drain
CN103681815A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 低比导通电阻的横向双极型晶体管
JP2014146748A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
US9293465B1 (en) * 2014-09-11 2016-03-22 Northrop Grumman Systems Corporation Monolithic bi-directional current conducting device and method of making the same
US9461039B2 (en) * 2015-02-15 2016-10-04 Tower Semiconductor Ltd. Die including a Schottky diode
JP2017011060A (ja) * 2015-06-19 2017-01-12 住友電気工業株式会社 ショットキーバリアダイオード
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
CN106024746B (zh) * 2016-07-25 2018-08-17 扬州扬杰电子科技股份有限公司 一种适用于金属丝键合的trench肖特基芯片及其加工工艺
IT201800004149A1 (it) * 2018-03-30 2019-09-30 St Microelectronics Srl Fotorivelatore di luce ultravioletta di carburo di silicio e suo processo di fabbricazione
WO2020256719A1 (en) 2019-06-19 2020-12-24 Power Integrations, Inc. Coupled polysilicon guard rings for enhancing breakdown voltage in a power semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293852A (ja) * 1996-04-25 1997-11-11 Sansha Electric Mfg Co Ltd 電力用半導体装置及びその製造方法
JPH1187698A (ja) * 1997-09-02 1999-03-30 Kansai Electric Power Co Inc:The 高耐圧半導体装置及びこの装置を用いた電力変換器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL169121C (nl) * 1970-07-10 1982-06-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon.
US4242690A (en) * 1978-06-06 1980-12-30 General Electric Company High breakdown voltage semiconductor device
US4982260A (en) 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5243204A (en) * 1990-05-18 1993-09-07 Sharp Kabushiki Kaisha Silicon carbide light emitting diode and a method for the same
JPH05129656A (ja) * 1991-10-31 1993-05-25 Sharp Corp ｐｎ接合型発光ダイオード
EP0571027A1 (en) 1992-05-21 1993-11-24 Koninklijke Philips Electronics N.V. Semiconductor device comprising a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region
TW286435B (enExample) 1994-07-27 1996-09-21 Siemens Ag
JPH0897441A (ja) 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
US5967795A (en) 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293852A (ja) * 1996-04-25 1997-11-11 Sansha Electric Mfg Co Ltd 電力用半導体装置及びその製造方法
JPH1187698A (ja) * 1997-09-02 1999-03-30 Kansai Electric Power Co Inc:The 高耐圧半導体装置及びこの装置を用いた電力変換器

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173705A (ja) * 2005-12-26 2007-07-05 Toyota Central Res & Dev Lab Inc 窒化物半導体装置
JP2008177369A (ja) * 2007-01-18 2008-07-31 Sumitomo Electric Ind Ltd ショットキバリアダイオード
JP2011003727A (ja) * 2009-06-18 2011-01-06 Fuji Electric Systems Co Ltd 半導体装置およびその製造方法
US10665728B2 (en) 2011-07-28 2020-05-26 Rohm Co., Ltd. Semiconductor device
US11355651B2 (en) 2011-07-28 2022-06-07 Rohm Co., Ltd. Semiconductor device
US12062726B2 (en) 2011-07-28 2024-08-13 Rohm Co., Ltd. Semiconductor device
US9577118B2 (en) 2011-07-28 2017-02-21 Rohm Co., Ltd. Semiconductor device
US9818886B2 (en) 2011-07-28 2017-11-14 Rohm Co., Ltd. Semiconductor device
US10056502B2 (en) 2011-07-28 2018-08-21 Rohm Co., Ltd. Semiconductor device
US10497816B2 (en) 2011-07-28 2019-12-03 Rohm Co., Ltd. Semiconductor device
US11664465B2 (en) 2011-07-28 2023-05-30 Rohm Co., Ltd. Semiconductor device
US10964825B2 (en) 2011-07-28 2021-03-30 Rohm Co., Ltd. Semiconductor device
JP2013038308A (ja) * 2011-08-10 2013-02-21 Denso Corp 炭化珪素半導体装置およびその製造方法
WO2013021636A1 (ja) * 2011-08-10 2013-02-14 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2014041920A (ja) * 2012-08-22 2014-03-06 Rohm Co Ltd 半導体装置
US10141439B2 (en) 2013-09-20 2018-11-27 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP2015061065A (ja) * 2013-09-20 2015-03-30 株式会社東芝 半導体装置およびその製造方法
JP7012137B2 (ja) 2015-05-21 2022-01-27 パナソニック株式会社 窒化物半導体装置
JP2021022745A (ja) * 2015-05-21 2021-02-18 パナソニック株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
WO2003073471A2 (en) 2003-09-04
US6693308B2 (en) 2004-02-17
US20030162355A1 (en) 2003-08-28
WO2003073471A3 (en) 2003-11-27
EP1485942B1 (en) 2012-12-26
EP1485942A4 (en) 2009-12-09
EP1485942A2 (en) 2004-12-15
AU2003230555A1 (en) 2003-09-09
AU2003230555A8 (en) 2003-09-09

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