AU2003230555A1 - POWER SiC DEVICES HAVING RAISED GUARD RINGS - Google Patents

POWER SiC DEVICES HAVING RAISED GUARD RINGS

Info

Publication number
AU2003230555A1
AU2003230555A1 AU2003230555A AU2003230555A AU2003230555A1 AU 2003230555 A1 AU2003230555 A1 AU 2003230555A1 AU 2003230555 A AU2003230555 A AU 2003230555A AU 2003230555 A AU2003230555 A AU 2003230555A AU 2003230555 A1 AU2003230555 A1 AU 2003230555A1
Authority
AU
Australia
Prior art keywords
guard rings
sic devices
power sic
raised guard
raised
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003230555A
Other languages
English (en)
Other versions
AU2003230555A8 (en
Inventor
Janna B. Dufrene
Igor Sankin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semisouth Laboratories Inc
Original Assignee
Semisouth Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semisouth Laboratories Inc filed Critical Semisouth Laboratories Inc
Publication of AU2003230555A1 publication Critical patent/AU2003230555A1/en
Publication of AU2003230555A8 publication Critical patent/AU2003230555A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
AU2003230555A 2002-02-22 2003-02-21 POWER SiC DEVICES HAVING RAISED GUARD RINGS Abandoned AU2003230555A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/079,892 2002-02-22
US10/079,892 US6693308B2 (en) 2002-02-22 2002-02-22 Power SiC devices having raised guard rings
PCT/US2003/005156 WO2003073471A2 (en) 2002-02-22 2003-02-21 POWER SiC DEVICES HAVING RAISED GUARD RINGS

Publications (2)

Publication Number Publication Date
AU2003230555A1 true AU2003230555A1 (en) 2003-09-09
AU2003230555A8 AU2003230555A8 (en) 2003-09-09

Family

ID=27752787

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003230555A Abandoned AU2003230555A1 (en) 2002-02-22 2003-02-21 POWER SiC DEVICES HAVING RAISED GUARD RINGS

Country Status (5)

Country Link
US (1) US6693308B2 (enExample)
EP (1) EP1485942B1 (enExample)
JP (1) JP2005518672A (enExample)
AU (1) AU2003230555A1 (enExample)
WO (1) WO2003073471A2 (enExample)

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WO2003092078A1 (fr) * 2002-04-25 2003-11-06 Sanken Electric Co., Ltd. Element a semiconducteur et procede de fabrication
WO2005119793A2 (en) * 2004-05-28 2005-12-15 Caracal, Inc. Silicon carbide schottky diodes and fabrication method
US7105875B2 (en) * 2004-06-03 2006-09-12 Wide Bandgap, Llc Lateral power diodes
CA2576960A1 (en) * 2004-07-08 2007-01-04 Semisouth Laboratories, Inc. Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
US7834376B2 (en) * 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
JP4982082B2 (ja) * 2005-12-26 2012-07-25 株式会社豊田中央研究所 窒化物半導体装置
US7449762B1 (en) 2006-04-07 2008-11-11 Wide Bandgap Llc Lateral epitaxial GaN metal insulator semiconductor field effect transistor
US7274083B1 (en) * 2006-05-02 2007-09-25 Semisouth Laboratories, Inc. Semiconductor device with surge current protection and method of making the same
US7372087B2 (en) * 2006-06-01 2008-05-13 Northrop Grumman Corporation Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
US7821097B2 (en) * 2006-06-05 2010-10-26 International Business Machines Corporation Lateral passive device having dual annular electrodes
US7741657B2 (en) * 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) * 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode
US9627552B2 (en) * 2006-07-31 2017-04-18 Vishay-Siliconix Molybdenum barrier metal for SiC Schottky diode and process of manufacture
JP2008085187A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
JP2008177369A (ja) * 2007-01-18 2008-07-31 Sumitomo Electric Ind Ltd ショットキバリアダイオード
US7825487B2 (en) * 2008-09-30 2010-11-02 Northrop Grumman Systems Corporation Guard ring structures and method of fabricating thereof
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
JP5310291B2 (ja) * 2009-06-18 2013-10-09 富士電機株式会社 半導体装置およびその製造方法
US20120007097A1 (en) * 2010-07-08 2012-01-12 Intersil Americas Inc. Schottky diode with combined field plate and guard ring
JP2013030618A (ja) 2011-07-28 2013-02-07 Rohm Co Ltd 半導体装置
JP5482745B2 (ja) * 2011-08-10 2014-05-07 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US9396947B2 (en) * 2011-08-25 2016-07-19 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9312133B2 (en) 2011-08-25 2016-04-12 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9378955B2 (en) * 2011-08-25 2016-06-28 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US9378956B2 (en) 2011-08-25 2016-06-28 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
US8871600B2 (en) 2011-11-11 2014-10-28 International Business Machines Corporation Schottky barrier diodes with a guard ring formed by selective epitaxy
US8921893B2 (en) * 2011-12-01 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit structure having islands between source and drain
JP2014041920A (ja) * 2012-08-22 2014-03-06 Rohm Co Ltd 半導体装置
CN103681815A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 低比导通电阻的横向双极型晶体管
JP2014146748A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
JP6271197B2 (ja) 2013-09-20 2018-01-31 株式会社東芝 半導体装置およびその製造方法
US9293465B1 (en) * 2014-09-11 2016-03-22 Northrop Grumman Systems Corporation Monolithic bi-directional current conducting device and method of making the same
US9461039B2 (en) * 2015-02-15 2016-10-04 Tower Semiconductor Ltd. Die including a Schottky diode
JPWO2016185645A1 (ja) * 2015-05-21 2018-03-15 パナソニック株式会社 窒化物半導体装置
JP2017011060A (ja) * 2015-06-19 2017-01-12 住友電気工業株式会社 ショットキーバリアダイオード
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
CN106024746B (zh) * 2016-07-25 2018-08-17 扬州扬杰电子科技股份有限公司 一种适用于金属丝键合的trench肖特基芯片及其加工工艺
IT201800004149A1 (it) * 2018-03-30 2019-09-30 St Microelectronics Srl Fotorivelatore di luce ultravioletta di carburo di silicio e suo processo di fabbricazione
WO2020256719A1 (en) 2019-06-19 2020-12-24 Power Integrations, Inc. Coupled polysilicon guard rings for enhancing breakdown voltage in a power semiconductor device

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Also Published As

Publication number Publication date
WO2003073471A2 (en) 2003-09-04
US6693308B2 (en) 2004-02-17
US20030162355A1 (en) 2003-08-28
JP2005518672A (ja) 2005-06-23
WO2003073471A3 (en) 2003-11-27
EP1485942B1 (en) 2012-12-26
EP1485942A4 (en) 2009-12-09
EP1485942A2 (en) 2004-12-15
AU2003230555A8 (en) 2003-09-09

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase