JP2005517810A - 回路製造用のインライン堆積法 - Google Patents

回路製造用のインライン堆積法 Download PDF

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Publication number
JP2005517810A
JP2005517810A JP2003568122A JP2003568122A JP2005517810A JP 2005517810 A JP2005517810 A JP 2005517810A JP 2003568122 A JP2003568122 A JP 2003568122A JP 2003568122 A JP2003568122 A JP 2003568122A JP 2005517810 A JP2005517810 A JP 2005517810A
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JP
Japan
Prior art keywords
web
film
deposition
mask pattern
aperture
Prior art date
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Pending
Application number
JP2003568122A
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English (en)
Japanese (ja)
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JP2005517810A5 (enExample
Inventor
エフ． ボード，ポール
アール． フレミング，パトリック
エー． ハース，マイケル
ダブリュ． ケリー，トミー
ブイ． マイヤース，ドーン
ディー． セイス，スティーブン
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3M Innovative Properties Co
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3M Innovative Properties Co
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Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2005517810A publication Critical patent/JP2005517810A/ja
Publication of JP2005517810A5 publication Critical patent/JP2005517810A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/15—Position of the PCB during processing
    • H05K2203/1545—Continuous processing, i.e. involving rolls moving a band-like or solid carrier along a continuous production path
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003568122A 2002-02-14 2003-01-21 回路製造用のインライン堆積法 Pending JP2005517810A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/076,005 US6821348B2 (en) 2002-02-14 2002-02-14 In-line deposition processes for circuit fabrication
PCT/US2003/001821 WO2003069016A2 (en) 2002-02-14 2003-01-21 In-line deposition processes for circuit fabrication

Publications (2)

Publication Number Publication Date
JP2005517810A true JP2005517810A (ja) 2005-06-16
JP2005517810A5 JP2005517810A5 (enExample) 2006-03-09

Family

ID=27660172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003568122A Pending JP2005517810A (ja) 2002-02-14 2003-01-21 回路製造用のインライン堆積法

Country Status (7)

Country Link
US (3) US6821348B2 (enExample)
EP (1) EP1474543A2 (enExample)
JP (1) JP2005517810A (enExample)
KR (1) KR20040085191A (enExample)
CN (1) CN100351425C (enExample)
AU (1) AU2003210596A1 (enExample)
WO (1) WO2003069016A2 (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007043116A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置
JP2009024208A (ja) * 2007-07-18 2009-02-05 Fujifilm Corp 蒸着装置及び蒸着方法並びにその方法を用いてパターン形成した層を有する電子素子及び有機エレクトロルミネッセンス素子
KR101223261B1 (ko) 2011-08-09 2013-01-17 퓨솅 일렉트로닉스 코포레이션 열경화성 플라스틱 발광 다이오드 지지대의 제조방법
JP2013020764A (ja) * 2011-07-08 2013-01-31 V Technology Co Ltd 薄膜パターン形成方法及び有機ｅｌ表示装置の製造方法。
WO2013039196A1 (ja) * 2011-09-16 2013-03-21 株式会社ブイ・テクノロジー 蒸着マスク、蒸着マスクの製造方法及び薄膜パターン形成方法
JP2013077541A (ja) * 2011-09-16 2013-04-25 V Technology Co Ltd 薄膜パターン形成方法及び有機ｅｌ表示装置の製造方法
JP2013095992A (ja) * 2011-11-04 2013-05-20 V Technology Co Ltd 薄膜パターン形成方法及びマスク
JP2013095993A (ja) * 2011-11-04 2013-05-20 V Technology Co Ltd マスクの製造方法
JP2013108143A (ja) * 2011-11-22 2013-06-06 V Technology Co Ltd マスクの製造方法及びマスクの製造装置
JP2013173968A (ja) * 2012-02-24 2013-09-05 V Technology Co Ltd 蒸着マスク及び蒸着マスクの製造方法
WO2015115136A1 (ja) * 2014-02-03 2015-08-06 株式会社ブイ・テクノロジー 成膜マスクの製造方法及び成膜マスク
US9334556B2 (en) 2011-09-16 2016-05-10 V Technology Co., Ltd. Deposition mask, producing method therefor and forming method for thin film pattern
KR20160146654A (ko) 2014-05-02 2016-12-21 브이 테크놀로지 씨오. 엘티디 빔 정형 마스크, 레이저 가공 장치 및 레이저 가공 방법
JP2017125264A (ja) * 2017-04-06 2017-07-20 大日本印刷株式会社 蒸着マスクの製造方法、金属マスク付き樹脂層、及び有機半導体素子の製造方法
JP2018124713A (ja) * 2017-01-31 2018-08-09 富士フイルム株式会社 巻取ロール
WO2020138226A1 (ja) * 2018-12-26 2020-07-02 京セラ株式会社 半導体素子の製造方法、半導体素子および基板

Families Citing this family (192)

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US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
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US6878208B2 (en) * 2002-04-26 2005-04-12 Tohoku Pioneer Corporation Mask for vacuum deposition and organic EL display manufactured by using the same
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JP2004186395A (ja) * 2002-12-03 2004-07-02 Fujitsu Ltd セラミック基板の製造方法
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US7294209B2 (en) 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
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JP4729843B2 (ja) * 2003-10-15 2011-07-20 凸版印刷株式会社 薄膜トランジスタの製造方法
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
KR101207442B1 (ko) * 2003-12-15 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막 집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로 장치를 가지는 아이디 태그 및 동전
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US6882897B1 (en) 2004-01-05 2005-04-19 Dennis S. Fernandez Reconfigurable garment definition and production method
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JP5652405B2 (ja) * 2009-12-11 2015-01-14 コニカミノルタ株式会社 有機ｅｌ素子の製造方法
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US6821348B2 (en) 2004-11-23
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