JP2005517026A - スルホナート誘導体及び潜酸としてのその使用 - Google Patents

スルホナート誘導体及び潜酸としてのその使用 Download PDF

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Publication number
JP2005517026A
JP2005517026A JP2003566624A JP2003566624A JP2005517026A JP 2005517026 A JP2005517026 A JP 2005517026A JP 2003566624 A JP2003566624 A JP 2003566624A JP 2003566624 A JP2003566624 A JP 2003566624A JP 2005517026 A JP2005517026 A JP 2005517026A
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JP
Japan
Prior art keywords
twenty
alkyl
cycloalkyl
haloalkyl
oso
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Pending
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JP2003566624A
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English (en)
Japanese (ja)
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JP2005517026A5 (enExample
Inventor
松本　啓
山戸　斉
朝倉　敏景
ムーレル，ペーター
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BASF Schweiz AG
Original Assignee
Ciba Spezialitaetenchemie Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ciba Spezialitaetenchemie Holding AG filed Critical Ciba Spezialitaetenchemie Holding AG
Publication of JP2005517026A publication Critical patent/JP2005517026A/ja
Publication of JP2005517026A5 publication Critical patent/JP2005517026A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
    • C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Materials For Photolithography (AREA)
  • Hydrogenated Pyridines (AREA)
  • Optical Filters (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Indole Compounds (AREA)
  • Detergent Compositions (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
JP2003566624A 2002-02-06 2003-01-28 スルホナート誘導体及び潜酸としてのその使用 Pending JP2005517026A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02405082 2002-02-06
PCT/EP2003/000821 WO2003067332A2 (en) 2002-02-06 2003-01-28 Sulfonate derivatives and the use therof as latent acids

Publications (2)

Publication Number Publication Date
JP2005517026A true JP2005517026A (ja) 2005-06-09
JP2005517026A5 JP2005517026A5 (enExample) 2006-03-16

Family

ID=27675790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003566624A Pending JP2005517026A (ja) 2002-02-06 2003-01-28 スルホナート誘導体及び潜酸としてのその使用

Country Status (11)

Country Link
US (2) US7326511B2 (enExample)
EP (1) EP1472576B1 (enExample)
JP (1) JP2005517026A (enExample)
KR (1) KR20040089607A (enExample)
CN (1) CN100475798C (enExample)
AU (1) AU2003206787A1 (enExample)
BR (1) BR0307501A (enExample)
CA (1) CA2474532A1 (enExample)
MX (1) MXPA04006581A (enExample)
TW (1) TWI288859B (enExample)
WO (1) WO2003067332A2 (enExample)

Cited By (6)

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JP2007304125A (ja) * 2006-05-08 2007-11-22 Tokyo Institute Of Technology ポジ型感光性樹脂組成物
JP2008275942A (ja) * 2007-04-27 2008-11-13 Tokyo Ohka Kogyo Co Ltd レジスト組成物およびレジストパターン形成方法
JP2010159243A (ja) * 2008-07-28 2010-07-22 Sumitomo Chemical Co Ltd 化合物、該化合物の製造法及び該化合物を含むフォトレジスト組成物
JP2015147926A (ja) * 2014-01-10 2015-08-20 住友化学株式会社 樹脂及びレジスト組成物
JP2017134375A (ja) * 2016-01-29 2017-08-03 ウシオ電機株式会社 露光装置及び露光方法
JP2020173470A (ja) * 2020-06-30 2020-10-22 株式会社アドテックエンジニアリング 露光方法

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KR20050083777A (ko) * 2002-10-16 2005-08-26 조지아 테크 리서치 코오포레이션 중합체, 그의 사용 방법, 및 그의 분해 방법
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US7687220B2 (en) * 2004-07-20 2010-03-30 Ciba Specialty Chemicals Corporation Oxime derivatives and use thereof as latent acids
WO2006046398A1 (ja) * 2004-10-29 2006-05-04 Nissan Chemical Industries, Ltd. 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター
US7183036B2 (en) * 2004-11-12 2007-02-27 International Business Machines Corporation Low activation energy positive resist
JP4484681B2 (ja) * 2004-12-03 2010-06-16 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP2009541254A (ja) * 2006-06-20 2009-11-26 チバ ホールディング インコーポレーテッド オキシムスルホネート及び潜酸としてのその使用
CN101506734B (zh) * 2006-08-24 2012-04-11 西巴控股有限公司 Uv量指示剂
GB2450975B (en) 2007-07-12 2010-02-24 Ciba Holding Inc Yellow radiation curing inks
CN102037409B (zh) * 2008-05-23 2013-12-11 康奈尔大学 在电子和电气设备中使用的有机材料的正交工艺
EP2404315A4 (en) * 2009-03-06 2012-08-08 Du Pont METHOD FOR FORMING AN ELECTROACTIVE LAYER
JP2012522084A (ja) 2009-03-30 2012-09-20 ビーエーエスエフ ソシエタス・ヨーロピア Ｕｖ線量インジケータフィルム
WO2011104127A1 (en) * 2010-02-24 2011-09-01 Basf Se Latent acids and their use
WO2012029758A1 (ja) * 2010-08-30 2012-03-08 富士フイルム株式会社 感光性樹脂組成物、オキシムスルホネート化合物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP5840146B2 (ja) * 2011-01-17 2016-01-06 株式会社クラレ ビニルスルホン酸エステル誘導体、高分子化合物およびフォトレジスト組成物
US9867800B2 (en) 2012-08-10 2018-01-16 Hallstar Innovations Corp. Method of quenching singlet and triplet excited states of pigments, such as porphyrin compounds, particularly protoporphyrin IX, with conjugated fused tricyclic compounds have electron withdrawing groups, to reduce generation of reactive oxygen species, particularly singlet oxygen
US9125829B2 (en) 2012-08-17 2015-09-08 Hallstar Innovations Corp. Method of photostabilizing UV absorbers, particularly dibenzyolmethane derivatives, e.g., Avobenzone, with cyano-containing fused tricyclic compounds
US9765051B2 (en) 2012-08-10 2017-09-19 Hallstar Innovations Corp. Compositions, apparatus, systems, and methods for resolving electronic excited states
US9145383B2 (en) 2012-08-10 2015-09-29 Hallstar Innovations Corp. Compositions, apparatus, systems, and methods for resolving electronic excited states
US9926289B2 (en) 2012-08-10 2018-03-27 Hallstar Innovations Corp. Compositions, apparatus, systems, and methods for resolving electronic excited states
US9950999B2 (en) 2016-08-12 2018-04-24 International Business Machines Corporation Non-ionic low diffusing photo-acid generators
AR111295A1 (es) 2017-03-20 2019-06-26 Forma Therapeutics Inc Composiciones de pirrolopirrol como activadores de piruvato quinasa (pkr)
WO2020061255A1 (en) 2018-09-19 2020-03-26 Forma Therapeutics, Inc. Activating pyruvate kinase r
US20200129485A1 (en) 2018-09-19 2020-04-30 Forma Therapeutics, Inc. Treating sickle cell disease with a pyruvate kinase r activating compound
MX2022003025A (es) 2019-09-19 2022-04-07 Forma Therapeutics Inc Activacion de la piruvato cinasa r.
IT201900022233A1 (it) * 2019-11-27 2021-05-27 Epta Inks S P A Inchiostro fotosensibile e embossabile
US12128035B2 (en) 2021-03-19 2024-10-29 Novo Nordisk Health Care Ag Activating pyruvate kinase R
CN117042327B (zh) * 2022-12-27 2024-01-30 珠海浩奕电子科技有限公司 一种高强度低介电常数印刷电路板及其制备工艺
CN117756702A (zh) * 2023-12-28 2024-03-26 河北凯诺中星科技有限公司 一种n-羟基-5-冰片烯-2，3-二甲酰亚胺-全氟代丁烷磺酸酯的合成方法
CN117756701A (zh) * 2023-12-28 2024-03-26 河北凯诺中星科技有限公司 一种n-羟基-5-冰片烯-2，3-二甲酰亚胺三氟甲磺酸酯的合成方法

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JP2007304125A (ja) * 2006-05-08 2007-11-22 Tokyo Institute Of Technology ポジ型感光性樹脂組成物
JP2008275942A (ja) * 2007-04-27 2008-11-13 Tokyo Ohka Kogyo Co Ltd レジスト組成物およびレジストパターン形成方法
JP2010159243A (ja) * 2008-07-28 2010-07-22 Sumitomo Chemical Co Ltd 化合物、該化合物の製造法及び該化合物を含むフォトレジスト組成物
JP2015147926A (ja) * 2014-01-10 2015-08-20 住友化学株式会社 樹脂及びレジスト組成物
JP2017134375A (ja) * 2016-01-29 2017-08-03 ウシオ電機株式会社 露光装置及び露光方法
JP2020173470A (ja) * 2020-06-30 2020-10-22 株式会社アドテックエンジニアリング 露光方法

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EP1472576A2 (en) 2004-11-03
EP1472576B1 (en) 2013-04-24
MXPA04006581A (es) 2004-10-04
KR20040089607A (ko) 2004-10-21
AU2003206787A8 (en) 2003-09-02
US20080286693A1 (en) 2008-11-20
BR0307501A (pt) 2004-12-07
AU2003206787A1 (en) 2003-09-02
WO2003067332A2 (en) 2003-08-14
CN100475798C (zh) 2009-04-08
TWI288859B (en) 2007-10-21
TW200302952A (en) 2003-08-16
CA2474532A1 (en) 2003-08-14
CN1628268A (zh) 2005-06-15
US7326511B2 (en) 2008-02-05
US20050153244A1 (en) 2005-07-14

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