JP2005517026A - スルホナート誘導体及び潜酸としてのその使用 - Google Patents

スルホナート誘導体及び潜酸としてのその使用 Download PDF

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Publication number
JP2005517026A
JP2005517026A JP2003566624A JP2003566624A JP2005517026A JP 2005517026 A JP2005517026 A JP 2005517026A JP 2003566624 A JP2003566624 A JP 2003566624A JP 2003566624 A JP2003566624 A JP 2003566624A JP 2005517026 A JP2005517026 A JP 2005517026A
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JP
Japan
Prior art keywords
twenty
alkyl
cycloalkyl
haloalkyl
oso
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Pending
Application number
JP2003566624A
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English (en)
Japanese (ja)
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JP2005517026A5 (enExample
Inventor
松本　啓
山戸　斉
朝倉　敏景
ムーレル，ペーター
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BASF Schweiz AG
Original Assignee
Ciba Spezialitaetenchemie Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Spezialitaetenchemie Holding AG filed Critical Ciba Spezialitaetenchemie Holding AG
Publication of JP2005517026A publication Critical patent/JP2005517026A/ja
Publication of JP2005517026A5 publication Critical patent/JP2005517026A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/64—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton
    • C07C323/66—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and sulfur atoms, not being part of thio groups, bound to the same carbon skeleton containing sulfur atoms of sulfo, esterified sulfo or halosulfonyl groups, bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Indole Compounds (AREA)
  • Optical Filters (AREA)
  • Detergent Compositions (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Hydrogenated Pyridines (AREA)
JP2003566624A 2002-02-06 2003-01-28 スルホナート誘導体及び潜酸としてのその使用 Pending JP2005517026A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02405082 2002-02-06
PCT/EP2003/000821 WO2003067332A2 (en) 2002-02-06 2003-01-28 Sulfonate derivatives and the use therof as latent acids

Publications (2)

Publication Number Publication Date
JP2005517026A true JP2005517026A (ja) 2005-06-09
JP2005517026A5 JP2005517026A5 (enExample) 2006-03-16

Family

ID=27675790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003566624A Pending JP2005517026A (ja) 2002-02-06 2003-01-28 スルホナート誘導体及び潜酸としてのその使用

Country Status (11)

Country Link
US (2) US7326511B2 (enExample)
EP (1) EP1472576B1 (enExample)
JP (1) JP2005517026A (enExample)
KR (1) KR20040089607A (enExample)
CN (1) CN100475798C (enExample)
AU (1) AU2003206787A1 (enExample)
BR (1) BR0307501A (enExample)
CA (1) CA2474532A1 (enExample)
MX (1) MXPA04006581A (enExample)
TW (1) TWI288859B (enExample)
WO (1) WO2003067332A2 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304125A (ja) * 2006-05-08 2007-11-22 Tokyo Institute Of Technology ポジ型感光性樹脂組成物
JP2008275942A (ja) * 2007-04-27 2008-11-13 Tokyo Ohka Kogyo Co Ltd レジスト組成物およびレジストパターン形成方法
JP2010159243A (ja) * 2008-07-28 2010-07-22 Sumitomo Chemical Co Ltd 化合物、該化合物の製造法及び該化合物を含むフォトレジスト組成物
JP2015147926A (ja) * 2014-01-10 2015-08-20 住友化学株式会社 樹脂及びレジスト組成物
JP2017134375A (ja) * 2016-01-29 2017-08-03 ウシオ電機株式会社 露光装置及び露光方法
JP2020173470A (ja) * 2020-06-30 2020-10-22 株式会社アドテックエンジニアリング 露光方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003301344A1 (en) * 2002-10-16 2004-05-04 Georgia Tech Research Corporation Polymers, methods of use thereof, and methods of decomposition thereof
CA2511979A1 (en) * 2003-02-19 2004-09-02 Akira Matsumoto Halogenated oxime derivatives and the use thereof as latent acids
KR101193824B1 (ko) * 2004-07-20 2012-10-24 시바 홀딩 인크 옥심 유도체 및 잠산으로서의 이의 용도
JP4924813B2 (ja) * 2004-10-29 2012-04-25 日産化学工業株式会社 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター
US7183036B2 (en) * 2004-11-12 2007-02-27 International Business Machines Corporation Low activation energy positive resist
JP4484681B2 (ja) * 2004-12-03 2010-06-16 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
CN101473268A (zh) * 2006-06-20 2009-07-01 西巴控股有限公司 肟磺酸酯和其作为潜伏酸的用途
BRPI0715723A2 (pt) * 2006-08-24 2013-09-17 Ciba Holding Inc indicadores de doses de uv
GB2450975B (en) 2007-07-12 2010-02-24 Ciba Holding Inc Yellow radiation curing inks
EP2297613B1 (en) * 2008-05-23 2017-11-29 Cornell University Orthogonal processing of organic materials used in electronic and electrical devices
TW201039382A (en) * 2009-03-06 2010-11-01 Du Pont Process for forming an electroactive layer
US20120043480A1 (en) 2009-03-30 2012-02-23 Basf Se Uv-dose indicator films
JP5850863B2 (ja) * 2010-02-24 2016-02-03 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 潜在性酸及びそれらの使用
EP2613198B1 (en) * 2010-08-30 2016-12-28 FUJIFILM Corporation Photosensitive resin composition, oxime sulfonate compound, method for forming cured film, cured film, organic el display device, and liquid crystal display device
WO2012098952A1 (ja) * 2011-01-17 2012-07-26 株式会社クラレ ビニルスルホン酸エステル誘導体、高分子化合物およびフォトレジスト組成物
US9125829B2 (en) 2012-08-17 2015-09-08 Hallstar Innovations Corp. Method of photostabilizing UV absorbers, particularly dibenzyolmethane derivatives, e.g., Avobenzone, with cyano-containing fused tricyclic compounds
US9145383B2 (en) 2012-08-10 2015-09-29 Hallstar Innovations Corp. Compositions, apparatus, systems, and methods for resolving electronic excited states
US9867800B2 (en) 2012-08-10 2018-01-16 Hallstar Innovations Corp. Method of quenching singlet and triplet excited states of pigments, such as porphyrin compounds, particularly protoporphyrin IX, with conjugated fused tricyclic compounds have electron withdrawing groups, to reduce generation of reactive oxygen species, particularly singlet oxygen
US9950999B2 (en) 2016-08-12 2018-04-24 International Business Machines Corporation Non-ionic low diffusing photo-acid generators
US11014927B2 (en) 2017-03-20 2021-05-25 Forma Therapeutics, Inc. Pyrrolopyrrole compositions as pyruvate kinase (PKR) activators
ES2989438T3 (es) 2018-09-19 2024-11-26 Novo Nordisk Healthcare Ag Activación de la piruvato cinasa R
US12053458B2 (en) 2018-09-19 2024-08-06 Novo Nordisk Health Care Ag Treating sickle cell disease with a pyruvate kinase R activating compound
EP4031132A4 (en) 2019-09-19 2023-09-13 Forma Therapeutics, Inc. Activating pyruvate kinase r
IT201900022233A1 (it) * 2019-11-27 2021-05-27 Epta Inks S P A Inchiostro fotosensibile e embossabile
US12128035B2 (en) 2021-03-19 2024-10-29 Novo Nordisk Health Care Ag Activating pyruvate kinase R
CN117042327B (zh) * 2022-12-27 2024-01-30 珠海浩奕电子科技有限公司 一种高强度低介电常数印刷电路板及其制备工艺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09222725A (ja) * 1995-10-31 1997-08-26 Ciba Geigy Ag オキシムスルホン酸エステルおよび潜伏性スルホン酸としてのそれらの使用
JPH09230588A (ja) * 1995-12-20 1997-09-05 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JP2000314956A (ja) * 1999-03-31 2000-11-14 Ciba Specialty Chem Holding Inc オキシム誘導体及びその潜在酸としての使用
JP2000517067A (ja) * 1996-09-02 2000-12-19 チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド 高感度の高解像度ｉ線ホトレジスト用のアルキルスルホニルオキシム類
JP2002303979A (ja) * 2001-04-05 2002-10-18 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2003182218A (ja) * 2001-12-13 2003-07-03 Fuji Photo Film Co Ltd 感熱記録材料

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346094A (en) 1980-09-22 1982-08-24 Eli Lilly And Company 3-Aryl-5-isothiazolecarboxylic acids and related compounds used to lower uric acid levels
US4540598A (en) 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
EP0199672B1 (de) 1985-04-12 1988-06-01 Ciba-Geigy Ag Oximsulfonate mit reaktiven Gruppen
JPS6336240A (ja) 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
EP0361906A3 (en) 1988-09-29 1991-05-02 Hoechst Celanese Corporation Method of producing an image reversal negative photoresist having a photo-labile blocked imide
JPH03100657A (ja) * 1989-09-14 1991-04-25 Fuji Photo Film Co Ltd 電子写真感光体
JPH03223860A (ja) 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd 新規レジスト材料
JP3008594B2 (ja) 1990-08-31 2000-02-14 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JPH04199152A (ja) * 1990-11-29 1992-07-20 Toshiba Corp 感光性組成物
JPH04295458A (ja) 1991-03-22 1992-10-20 Fuji Photo Film Co Ltd 光照射により酸を発生する化合物
JPH04328552A (ja) 1991-04-26 1992-11-17 Konica Corp 感光性組成物
DE4390097T1 (de) * 1992-01-10 1994-12-01 Fuji Photo Film Co Ltd Vorstufe für eine elektrophotographische Flachdruckplatte
US5714289A (en) * 1992-02-12 1998-02-03 Fuji Photo Film Co., Ltd. Method of preparation of electrophotographic printing plate
EP0571330B1 (de) * 1992-05-22 1999-04-07 Ciba SC Holding AG Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
DE4236068A1 (de) 1992-10-26 1994-04-28 Hoechst Ag Positiv arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial
US6159665A (en) 1993-06-17 2000-12-12 Lucent Technologies Inc. Processes using photosensitive materials including a nitro benzyl ester photoacid generator
EP0648817B1 (de) 1993-10-13 1999-11-10 Ciba SC Holding AG Neue Fluoreszenzfarbstoffe
EP0648770B1 (de) 1993-10-13 2000-05-17 Ciba SC Holding AG Pyrrolo[3,4-c]pyrrole
EP0654711B1 (en) 1993-11-22 1999-06-02 Ciba SC Holding AG Compositions for making structured color images and application thereof
EP0717319B1 (en) 1994-12-06 2001-04-11 Ocg Microelectronic Materials, Inc. Photoacid generating composition used in radiation-sensitive compositions
EP0742255B1 (en) 1995-05-12 2004-04-14 Ciba SC Holding AG Colouration of high molecular weight organic materials in the mass with soluble phthalocyanine precursors
JP3456808B2 (ja) 1995-09-29 2003-10-14 東京応化工業株式会社 ホトレジスト組成物
JP3830183B2 (ja) * 1995-09-29 2006-10-04 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
US20010037037A1 (en) * 1995-10-31 2001-11-01 Kurt Dietliker Oximesulfonic acid esters and the use thereof as latent sulfonic acids
EP0877293B1 (en) 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positive photosensitive composition
EP0878738B1 (en) 1997-05-12 2002-01-09 Fuji Photo Film Co., Ltd. Positive resist composition
TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
TW575792B (en) 1998-08-19 2004-02-11 Ciba Sc Holding Ag New unsaturated oxime derivatives and the use thereof as latent acids
NL1014545C2 (nl) * 1999-03-31 2002-02-26 Ciba Sc Holding Ag Oxim-derivaten en de toepassing daarvan als latente zuren.
TWI272451B (en) * 2000-09-25 2007-02-01 Ciba Sc Holding Ag Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition
DK1392675T3 (da) * 2001-06-01 2005-04-04 Ciba Sc Holding Ag Substituerede oximderivater og anvendelsen deraf som latente syrer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09222725A (ja) * 1995-10-31 1997-08-26 Ciba Geigy Ag オキシムスルホン酸エステルおよび潜伏性スルホン酸としてのそれらの使用
JPH09230588A (ja) * 1995-12-20 1997-09-05 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JP2000517067A (ja) * 1996-09-02 2000-12-19 チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド 高感度の高解像度ｉ線ホトレジスト用のアルキルスルホニルオキシム類
JP2000314956A (ja) * 1999-03-31 2000-11-14 Ciba Specialty Chem Holding Inc オキシム誘導体及びその潜在酸としての使用
JP2002303979A (ja) * 2001-04-05 2002-10-18 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2003182218A (ja) * 2001-12-13 2003-07-03 Fuji Photo Film Co Ltd 感熱記録材料

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007304125A (ja) * 2006-05-08 2007-11-22 Tokyo Institute Of Technology ポジ型感光性樹脂組成物
JP2008275942A (ja) * 2007-04-27 2008-11-13 Tokyo Ohka Kogyo Co Ltd レジスト組成物およびレジストパターン形成方法
JP2010159243A (ja) * 2008-07-28 2010-07-22 Sumitomo Chemical Co Ltd 化合物、該化合物の製造法及び該化合物を含むフォトレジスト組成物
JP2015147926A (ja) * 2014-01-10 2015-08-20 住友化学株式会社 樹脂及びレジスト組成物
JP2017134375A (ja) * 2016-01-29 2017-08-03 ウシオ電機株式会社 露光装置及び露光方法
JP2020173470A (ja) * 2020-06-30 2020-10-22 株式会社アドテックエンジニアリング 露光方法

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AU2003206787A8 (en) 2003-09-02
US20050153244A1 (en) 2005-07-14
CA2474532A1 (en) 2003-08-14
BR0307501A (pt) 2004-12-07
WO2003067332A2 (en) 2003-08-14
MXPA04006581A (es) 2004-10-04
EP1472576B1 (en) 2013-04-24
KR20040089607A (ko) 2004-10-21
WO2003067332A3 (en) 2003-12-24
CN1628268A (zh) 2005-06-15
US7326511B2 (en) 2008-02-05
TWI288859B (en) 2007-10-21
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