JP2005516419A - 発光ダイオードのクラスタ実装 - Google Patents
発光ダイオードのクラスタ実装 Download PDFInfo
- Publication number
- JP2005516419A JP2005516419A JP2003564940A JP2003564940A JP2005516419A JP 2005516419 A JP2005516419 A JP 2005516419A JP 2003564940 A JP2003564940 A JP 2003564940A JP 2003564940 A JP2003564940 A JP 2003564940A JP 2005516419 A JP2005516419 A JP 2005516419A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diodes
- score line
- semiconductor substrate
- unitized subset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
Description
Claims (20)
- 発光領域が形成された半導体基板に刻み目を入れて複数の発光ダイオードのうちの個々の発光ダイオード間に刻み目線を提供するステップと、
前記刻み目線のうちの選択刻み目線に沿って前記半導体基板を分離して前記複数の発光ダイオードの、少なくとも2個の発光ダイオードを含むユニット化サブセットを提供するステップと、
前記複数の発光ダイオードの前記ユニット化サブセットの発光ダイオードに電気的接続を提供するステップと
を含むことを特徴とする発光ダイオードを形成する方法。 - 前記半導体基板は炭化ケイ素基板を含むことを特徴とする請求項1に記載の方法。
- 前記半導体基板はサファイア基板を含むことを特徴とする請求項1に記載の方法。
- 前記刻み目線のうちの前記半導体基板をそれに沿って分離する前記選択刻み目線は、細片の発光ダイオードを前記ユニット化サブセットとして提供するように選択される刻み目線を含むことを特徴とする請求項1に記載の方法。
- 前記刻み目線のうちの前記半導体基板をそれに沿って分離する前記選択刻み目線は、少なくとも2行の平行な行の発光ダイオードを有する長方形の発光ダイオードを前記ユニット化サブセットとして提供するように選択される刻み目線を含むことを特徴とする請求項1に記載の方法。
- 前記刻み目線のうちの前記半導体基板をそれに沿って分離する前記選択刻み目線は、正方形の発光ダイオードを前記ユニット化サブセットとして提供するように選択される刻み目線を含むことを特徴とする請求項1に記載の方法。
- 前記電気的接続を提供するステップは、前記発光ダイオードの接点にハンダ付けを行うことを含むことを特徴とする請求項1に記載の方法。
- 発光ダイオードの前記ユニット化サブセットの前記複数の発光ダイオードは、前記ユニット化サブセット中の前記発光ダイオードのそれぞれに対する共通接点と、前記ユニット化サブセット中の前記発光ダイオードのそれぞれに対応する個別接点とを有しており、前記電気的接続を提供するステップは、
前記共通接点用の共通接続を提供するステップと、
前記個別接点の並列接続を提供するステップと
を含むことを特徴とする請求項1に記載の方法。 - 前記共通接続を提供するステップは、前記共通接点にハンダ付けによる接続を行うことを含むことを特徴とする請求項8に記載の方法。
- 並列接続を提供する前記ステップは、前記個別接点のうちの接点を導電性バスストリップに接続することを含むことを特徴とする請求項8に記載の方法。
- 前記並列接続を提供するステップは、
前記個別接点のうちの第1の接点を導電性バスに接続するステップと
前記個別接点のうちの残りの接点を前記個別接点のうちの前記第1の接点にデイジーチェーン接続するステップと
を含むことを特徴とする請求項8に記載の方法。 - 前記刻み目線のうちの前記半導体基板をそれに沿って分離する前記選択刻み目線は、選択された波長プロファイルを提供した、発光ダイオードのユニット化サブセットを提供するように選択される刻み目線を含むことを特徴とする請求項1に記載の方法。
- 前記選択された波長プロファイルは、選択された範囲の波長を含むことを特徴とする請求項12に記載の方法。
- 前記刻み目線のうちの前記半導体基板をそれに沿って分離する前記選択刻み目線は、選択された光出力レベルを提供した、発光ダイオードのユニット化サブセットを提供するように選択される刻み目線を含むことを特徴とする請求項1に記載の方法。
- 前記刻み目線は、前記発光ダイオードのうちの発光ダイオードにATON形を提供することを特徴とする請求項1に記載の方法。
- 前記電気的接続を提供するステップは、前記複数の発光ダイオードの前記ユニット化サブセットの前記発光ダイオードを選択的に接続して既定の特性を有する1組の発光ダイオードを提供することを含むことを特徴とする請求項1に記載の方法。
- 前記既定の特性は光出力特性を含むことを特徴とする請求項16に記載の方法。
- 前記既定の特性は電気的特性を含むことを特徴とする請求項16に記載の方法。
- 前記電気的特性は順バイアス電圧を含むことを特徴とする請求項18に記載の方法。
- 前記刻み目線は、前記複数の発光ダイオードのうちの個々の発光ダイオードを画定することを特徴とする請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/058,369 US6635503B2 (en) | 2002-01-28 | 2002-01-28 | Cluster packaging of light emitting diodes |
PCT/US2002/033315 WO2003065457A2 (en) | 2002-01-28 | 2002-10-18 | Cluster packaging of light emitting diodes |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005516419A true JP2005516419A (ja) | 2005-06-02 |
JP2005516419A5 JP2005516419A5 (ja) | 2006-01-05 |
JP4489436B2 JP4489436B2 (ja) | 2010-06-23 |
Family
ID=27609572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003564940A Expired - Lifetime JP4489436B2 (ja) | 2002-01-28 | 2002-10-18 | 発光ダイオードのクラスタ実装 |
Country Status (12)
Country | Link |
---|---|
US (1) | US6635503B2 (ja) |
EP (1) | EP1470591B1 (ja) |
JP (1) | JP4489436B2 (ja) |
KR (1) | KR100923485B1 (ja) |
CN (1) | CN1938855A (ja) |
AT (1) | ATE492032T1 (ja) |
AU (1) | AU2002335082A1 (ja) |
CA (1) | CA2473722A1 (ja) |
DE (1) | DE60238641D1 (ja) |
MY (1) | MY129737A (ja) |
TW (1) | TWI253764B (ja) |
WO (1) | WO2003065457A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007511105A (ja) * | 2003-11-12 | 2007-04-26 | クリー インコーポレイテッド | 発光デバイス(led)をその上に有する半導体ウエハ裏面を加工する方法およびその方法により形成されたled |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7858403B2 (en) | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US7432536B2 (en) * | 2004-11-04 | 2008-10-07 | Cree, Inc. | LED with self aligned bond pad |
US8288942B2 (en) * | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
WO2007073496A2 (en) | 2005-12-22 | 2007-06-28 | Cree Led Lighting Solutions, Inc. | Lighting device |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
US8998444B2 (en) | 2006-04-18 | 2015-04-07 | Cree, Inc. | Solid state lighting devices including light mixtures |
US7821194B2 (en) | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
WO2007139781A2 (en) | 2006-05-23 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Lighting device |
US8596819B2 (en) | 2006-05-31 | 2013-12-03 | Cree, Inc. | Lighting device and method of lighting |
US7789531B2 (en) | 2006-10-02 | 2010-09-07 | Illumitex, Inc. | LED system and method |
US9318327B2 (en) | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
CN101652861B (zh) * | 2007-01-22 | 2013-01-23 | 科锐公司 | 容错发光体、包含容错发光体的系统以及制造容错发光体的方法 |
TWI440210B (zh) * | 2007-01-22 | 2014-06-01 | Cree Inc | 使用發光裝置外部互連陣列之照明裝置及其製造方法 |
US20080198572A1 (en) | 2007-02-21 | 2008-08-21 | Medendorp Nicholas W | LED lighting systems including luminescent layers on remote reflectors |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
EP2203938A1 (en) * | 2007-10-26 | 2010-07-07 | Cree Led Lighting Solutions, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
US7955875B2 (en) * | 2008-09-26 | 2011-06-07 | Cree, Inc. | Forming light emitting devices including custom wavelength conversion structures |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US7967652B2 (en) | 2009-02-19 | 2011-06-28 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US8333631B2 (en) | 2009-02-19 | 2012-12-18 | Cree, Inc. | Methods for combining light emitting devices in a package and packages including combined light emitting devices |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
EP2480816A1 (en) | 2009-09-25 | 2012-08-01 | Cree, Inc. | Lighting device with low glare and high light level uniformity |
US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
US20190221728A1 (en) * | 2018-01-17 | 2019-07-18 | Epistar Corporation | Light-emitting device and the manufacturing method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680182A (en) * | 1979-12-05 | 1981-07-01 | Mitsubishi Electric Corp | Luminous diode |
JPS56130980A (en) * | 1980-03-17 | 1981-10-14 | Sanyo Electric Co Ltd | Manufacture of solid state display unit |
JPS60136788A (ja) * | 1983-12-26 | 1985-07-20 | 日本ビクター株式会社 | Led平面パネルデイスプレイの製作法 |
JPH01280368A (ja) * | 1988-05-06 | 1989-11-10 | Sharp Corp | 化合物半導体発光素子 |
WO2001061765A1 (de) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
JP2003023176A (ja) * | 2001-07-06 | 2003-01-24 | Toyoda Gosei Co Ltd | 発光素子 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3343026A (en) * | 1963-11-27 | 1967-09-19 | H P Associates | Semi-conductive radiation source |
US4396929A (en) | 1979-10-19 | 1983-08-02 | Matsushita Electric Industrial Company, Ltd. | Gallium nitride light-emitting element and method of manufacturing the same |
US4476620A (en) * | 1979-10-19 | 1984-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of making a gallium nitride light-emitting diode |
JPS56131977A (en) | 1980-03-19 | 1981-10-15 | Sanyo Electric Co Ltd | Manufacture of gan light emitting diode |
JPH01225377A (ja) | 1988-03-04 | 1989-09-08 | Mitsubishi Cable Ind Ltd | Ledアレイ |
US5187547A (en) | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
JP2704181B2 (ja) | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | 化合物半導体単結晶薄膜の成長方法 |
US5087949A (en) | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
JP3160914B2 (ja) | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
US5459337A (en) * | 1993-02-19 | 1995-10-17 | Sony Corporation | Semiconductor display device with red, green and blue emission |
EP1450415A3 (en) | 1993-04-28 | 2005-05-04 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device |
US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
WO1996011498A1 (en) * | 1994-10-11 | 1996-04-18 | International Business Machines Corporation | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
JPH0982587A (ja) | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | 非方形電子チップの製造方法 |
US5917202A (en) | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
US5718760A (en) | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JP3239774B2 (ja) * | 1996-09-20 | 2001-12-17 | 豊田合成株式会社 | 3族窒化物半導体発光素子の基板分離方法 |
JPH10256604A (ja) | 1997-03-11 | 1998-09-25 | Rohm Co Ltd | 半導体発光素子 |
JPH10275936A (ja) * | 1997-03-28 | 1998-10-13 | Rohm Co Ltd | 半導体発光素子の製法 |
JP3769872B2 (ja) | 1997-05-06 | 2006-04-26 | ソニー株式会社 | 半導体発光素子 |
DE19861398B4 (de) | 1997-10-03 | 2010-12-09 | Rohm Co. Ltd., Kyoto | Licht abstrahlende Halbleitervorrichtung |
US5952681A (en) | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
EP1928034A3 (en) | 1997-12-15 | 2008-06-18 | Philips Lumileds Lighting Company LLC | Light emitting device |
CH689339A5 (de) * | 1998-02-12 | 1999-02-26 | Staufert Gerhard | Konfektionierbares LED-Leuchpaneel. |
US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
US6046465A (en) | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
JPH11340576A (ja) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体デバイス |
US6097041A (en) | 1998-08-24 | 2000-08-01 | Kingmax Technology Inc. | Light-emitting diode with anti-reflector |
KR100269540B1 (ko) * | 1998-08-28 | 2000-10-16 | 윤종용 | 웨이퍼 상태에서의 칩 스케일 패키지 제조 방법 |
US6169294B1 (en) | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
US6229120B1 (en) | 1998-11-12 | 2001-05-08 | Hewlett-Packard Company | Controlling the power dissipation of a fixing device |
US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
JP2000195827A (ja) | 1998-12-25 | 2000-07-14 | Oki Electric Ind Co Ltd | Ledアレイチップおよびその製造方法ならびにダイシング装置 |
US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US6222207B1 (en) | 1999-05-24 | 2001-04-24 | Lumileds Lighting, U.S. Llc | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip |
US6133589A (en) | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
DE10111501B4 (de) * | 2001-03-09 | 2019-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
-
2002
- 2002-01-28 US US10/058,369 patent/US6635503B2/en not_active Expired - Lifetime
- 2002-10-18 DE DE60238641T patent/DE60238641D1/de not_active Expired - Lifetime
- 2002-10-18 EP EP02806684A patent/EP1470591B1/en not_active Expired - Lifetime
- 2002-10-18 WO PCT/US2002/033315 patent/WO2003065457A2/en active Application Filing
- 2002-10-18 AU AU2002335082A patent/AU2002335082A1/en not_active Abandoned
- 2002-10-18 CN CNA028275896A patent/CN1938855A/zh active Pending
- 2002-10-18 KR KR1020047010605A patent/KR100923485B1/ko not_active IP Right Cessation
- 2002-10-18 CA CA002473722A patent/CA2473722A1/en not_active Abandoned
- 2002-10-18 JP JP2003564940A patent/JP4489436B2/ja not_active Expired - Lifetime
- 2002-10-18 AT AT02806684T patent/ATE492032T1/de not_active IP Right Cessation
- 2002-10-29 MY MYPI20024049A patent/MY129737A/en unknown
- 2002-10-30 TW TW091132155A patent/TWI253764B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680182A (en) * | 1979-12-05 | 1981-07-01 | Mitsubishi Electric Corp | Luminous diode |
JPS56130980A (en) * | 1980-03-17 | 1981-10-14 | Sanyo Electric Co Ltd | Manufacture of solid state display unit |
JPS60136788A (ja) * | 1983-12-26 | 1985-07-20 | 日本ビクター株式会社 | Led平面パネルデイスプレイの製作法 |
JPH01280368A (ja) * | 1988-05-06 | 1989-11-10 | Sharp Corp | 化合物半導体発光素子 |
WO2001061765A1 (de) * | 2000-02-15 | 2001-08-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
JP2003023176A (ja) * | 2001-07-06 | 2003-01-24 | Toyoda Gosei Co Ltd | 発光素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007511105A (ja) * | 2003-11-12 | 2007-04-26 | クリー インコーポレイテッド | 発光デバイス(led)をその上に有する半導体ウエハ裏面を加工する方法およびその方法により形成されたled |
Also Published As
Publication number | Publication date |
---|---|
KR20040073549A (ko) | 2004-08-19 |
EP1470591A2 (en) | 2004-10-27 |
MY129737A (en) | 2007-04-30 |
US20030143767A1 (en) | 2003-07-31 |
KR100923485B1 (ko) | 2009-10-27 |
WO2003065457A2 (en) | 2003-08-07 |
US6635503B2 (en) | 2003-10-21 |
TW200303622A (en) | 2003-09-01 |
ATE492032T1 (de) | 2011-01-15 |
CA2473722A1 (en) | 2003-08-07 |
CN1938855A (zh) | 2007-03-28 |
EP1470591B1 (en) | 2010-12-15 |
DE60238641D1 (de) | 2011-01-27 |
TWI253764B (en) | 2006-04-21 |
WO2003065457A3 (en) | 2004-02-05 |
JP4489436B2 (ja) | 2010-06-23 |
AU2002335082A1 (en) | 2003-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4489436B2 (ja) | 発光ダイオードのクラスタ実装 | |
US20200243492A1 (en) | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same | |
US7632691B2 (en) | Surface mountable chip | |
JP5148849B2 (ja) | Ledパッケージ、それを用いた発光装置およびledパッケージの製造方法 | |
TWI422044B (zh) | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 | |
JP2005516419A5 (ja) | ||
KR20050119635A (ko) | 트렌치 커트형 발광 다이오드 및 이의 제조 방법 | |
JP2015005720A (ja) | 金属化された側壁を有する半導体発光デバイス | |
TW201826576A (zh) | 發光二極體(led)結構及形成覆晶led結構之方法 | |
US11088298B2 (en) | Light-emitting device | |
US20160155894A1 (en) | Light-emitting device and manufacturing method thereof | |
KR20010088929A (ko) | AlGaInN계 반도체 LED 소자 및 그 제조 방법 | |
KR20160146547A (ko) | 고전압 엘이디 플립 칩 및 그 제조 방법 | |
US20130034920A1 (en) | Manufacturing method of led package structure | |
KR102544373B1 (ko) | C2 대칭성 led 소자 | |
JP2007019099A (ja) | 発光装置およびその製造方法 | |
JPS58223380A (ja) | 発光ダイオ−ドアレイ | |
KR101926360B1 (ko) | 멀티셀 어레이를 갖는 반도체 발광장치 | |
KR20140097792A (ko) | 발광 모듈 | |
TW201427089A (zh) | 發光晶片及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051013 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051013 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090410 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090721 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091015 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100323 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100331 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130409 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4489436 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130409 Year of fee payment: 3 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D04 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130409 Year of fee payment: 3 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130409 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140409 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
EXPY | Cancellation because of completion of term |