JPS5680182A - Luminous diode - Google Patents

Luminous diode

Info

Publication number
JPS5680182A
JPS5680182A JP15850479A JP15850479A JPS5680182A JP S5680182 A JPS5680182 A JP S5680182A JP 15850479 A JP15850479 A JP 15850479A JP 15850479 A JP15850479 A JP 15850479A JP S5680182 A JPS5680182 A JP S5680182A
Authority
JP
Japan
Prior art keywords
partition grooves
junction
flank
lights
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15850479A
Other languages
Japanese (ja)
Inventor
Yoshiaki Hisamoto
Shigeru Kitabi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15850479A priority Critical patent/JPS5680182A/en
Publication of JPS5680182A publication Critical patent/JPS5680182A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To increase the quantities of flank lights by a method wherein a plurality of P-N junction bodies formed to a conductor base body are juxtaposed under conditions that are mutually separated through partition grooves. CONSTITUTION:A plurality of P-N junction bodies 5 consisting of N type epitaxial layers 2, high specific resistance P type epitaxial layers 3 and low specific resistance P type layers 4 are formed on an upper surface of a silicon dope N type GaAs substrate 1 of a III-V group compound semiconductor, on a lower surface thereof one metallic electrode 6 is made up. Each P-N junction body 5 is juxtaposed under conditions that are mutually separated through partition grooves 17 located so as to surround the flanks. Each one of the other metallic electrodes 7 is made up on the upper surfaces of each P-N junction body 5. When the partition grooves 17 are formed in V shapes, luminous output is increased because flank lights are not attenuated excessively and upward go out of the partition grooves 17.
JP15850479A 1979-12-05 1979-12-05 Luminous diode Pending JPS5680182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15850479A JPS5680182A (en) 1979-12-05 1979-12-05 Luminous diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15850479A JPS5680182A (en) 1979-12-05 1979-12-05 Luminous diode

Publications (1)

Publication Number Publication Date
JPS5680182A true JPS5680182A (en) 1981-07-01

Family

ID=15673172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15850479A Pending JPS5680182A (en) 1979-12-05 1979-12-05 Luminous diode

Country Status (1)

Country Link
JP (1) JPS5680182A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065457A3 (en) * 2002-01-28 2004-02-05 Cree Inc Cluster packaging of light emitting diodes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003065457A3 (en) * 2002-01-28 2004-02-05 Cree Inc Cluster packaging of light emitting diodes
JP2005516419A (en) * 2002-01-28 2005-06-02 クリー　インコーポレイテッド Cluster implementation of light emitting diode
KR100923485B1 (en) 2002-01-28 2009-10-27 크리 인코포레이티드 Methods of forming a light emitting device

Similar Documents

Publication Publication Date Title
EP0385450A3 (en) Semiconductor device with mis capacitor
JPS57128983A (en) Pin diode
JPS5680182A (en) Luminous diode
JPS5473585A (en) Gate turn-off thyristor
JPS5793584A (en) Semiconductor photoreceiving element
JPS5785266A (en) Zener diode
JPS57178387A (en) Indicator for luminescence and its manufacture
JPS5785259A (en) Light drive type thyristor
JPS56162866A (en) Composite thyristor
JPS5624986A (en) Injection type light emitting semiconductor device and manufacture thereof
JPS55115357A (en) Semiconductor device
JPS5715466A (en) Semiconductor device
JPS5563879A (en) Semiconductor device
JPS57132378A (en) Light-emitting semiconductor device
JPS5541712A (en) Production of semiconductor device
JPS5750480A (en) Constant voltage diode
JPS5779685A (en) Light emitting diode device
JPS56157077A (en) Semiconductor light emitting device
JPS57121283A (en) Semiconductor device
JPS5598873A (en) Temperature compensated type constant-voltage diode
JPS55124260A (en) Method of fabricating high withstand voltage semiconductor device
JPS5745283A (en) Semiconductor device
JPS62250679A (en) Light-emitting diode
JPS5658288A (en) Semiconductor device
JPS5618461A (en) Planar type semiconductor element