JPS5541712A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5541712A
JPS5541712A JP11397978A JP11397978A JPS5541712A JP S5541712 A JPS5541712 A JP S5541712A JP 11397978 A JP11397978 A JP 11397978A JP 11397978 A JP11397978 A JP 11397978A JP S5541712 A JPS5541712 A JP S5541712A
Authority
JP
Japan
Prior art keywords
injection
impurity
ion
production
distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11397978A
Other languages
Japanese (ja)
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP11397978A priority Critical patent/JPS5541712A/en
Publication of JPS5541712A publication Critical patent/JPS5541712A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To improve the luminous efficiency by making a gentle slop distribution of impurity ion at around p-n joint part with injection of gallium ion into the p-n joint part when some impurity is injected, in the case of production of p-n type light emitting diode.
CONSTITUTION: In the case of production of light emitting diode whose p-n junction is made with injection of impurity ion into compound semiconductor base where in the one compound element being gallium. The p-n junction is formed with injection of gallium ion when some impurity is injected. Further, with injection of both Ga and Zn ions, the generation of Ga hole is limited. As the resutls, the diffusion of Zn is abnormally multiplied, and a gentle slop distribution of acceptor concentration is obtained. With this distribution of impurity ion, the luminous efficiency is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP11397978A 1978-09-16 1978-09-16 Production of semiconductor device Pending JPS5541712A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11397978A JPS5541712A (en) 1978-09-16 1978-09-16 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11397978A JPS5541712A (en) 1978-09-16 1978-09-16 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5541712A true JPS5541712A (en) 1980-03-24

Family

ID=14626000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11397978A Pending JPS5541712A (en) 1978-09-16 1978-09-16 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5541712A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281780A (en) * 1985-10-05 1987-04-15 Fujitsu Ltd Manufacture of light receiving element
JPH02197583A (en) * 1988-10-12 1990-08-06 Deitsupusoole Kk Formation of ceramic film by laser beam irradiation
JPH02254174A (en) * 1989-03-27 1990-10-12 Deitsupusoole Kk Formation of ceramic film by laser irradiation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281780A (en) * 1985-10-05 1987-04-15 Fujitsu Ltd Manufacture of light receiving element
JPH02197583A (en) * 1988-10-12 1990-08-06 Deitsupusoole Kk Formation of ceramic film by laser beam irradiation
JPH02254174A (en) * 1989-03-27 1990-10-12 Deitsupusoole Kk Formation of ceramic film by laser irradiation

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