UST979005I4 - Light emitting diodes with back-side emission - Google Patents
Light emitting diodes with back-side emission Download PDFInfo
- Publication number
- UST979005I4 UST979005I4 US05/788,179 US78817977A UST979005I4 US T979005 I4 UST979005 I4 US T979005I4 US 78817977 A US78817977 A US 78817977A US T979005 I4 UST979005 I4 US T979005I4
- Authority
- US
- United States
- Prior art keywords
- light emitting
- emitting diodes
- side emission
- planar
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
a back-side light-emitting diode comprised of an N-type free-standing monocrystalline planar substrate of a III-V ternary compound in which a P-type impurity is diffused into one of the planar surfaces, of the substrate, with the distance x in microns from the junction depth to the other planar surface conforming to the relationship x = 0.5/α, where α is the absorption coefficient of said compound at a 7,000 Angstrom wavelength.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47681274A | 1974-06-06 | 1974-06-06 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US47681274A Continuation | 1974-06-06 | 1974-06-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
UST979005I4 true UST979005I4 (en) | 1979-02-06 |
Family
ID=23893355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/788,179 Pending UST979005I4 (en) | 1974-06-06 | 1977-04-18 | Light emitting diodes with back-side emission |
Country Status (5)
Country | Link |
---|---|
US (1) | UST979005I4 (en) |
JP (1) | JPS516493A (en) |
DE (1) | DE2517978A1 (en) |
FR (1) | FR2280205A1 (en) |
GB (1) | GB1477415A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4011145A1 (en) * | 1990-04-06 | 1991-10-10 | Telefunken Electronic Gmbh | LUMINESCENCE SEMICONDUCTOR ELEMENT |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5129636B1 (en) * | 1970-12-25 | 1976-08-26 | ||
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
-
1975
- 1975-04-10 GB GB1468875A patent/GB1477415A/en not_active Expired
- 1975-04-23 DE DE19752517978 patent/DE2517978A1/en active Pending
- 1975-04-29 FR FR7514029A patent/FR2280205A1/en active Granted
- 1975-06-04 JP JP6665375A patent/JPS516493A/en active Pending
-
1977
- 1977-04-18 US US05/788,179 patent/UST979005I4/en active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2280205B1 (en) | 1977-07-08 |
DE2517978A1 (en) | 1976-01-02 |
GB1477415A (en) | 1977-06-22 |
FR2280205A1 (en) | 1976-02-20 |
JPS516493A (en) | 1976-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1065450A (en) | Electro-optical transistor chopper | |
CA2054242A1 (en) | Light-emitting semiconductor device using gallium nitride group compound | |
JPS52104091A (en) | Light-emitting semiconductor | |
UST979005I4 (en) | Light emitting diodes with back-side emission | |
GB1173162A (en) | Injection-Luminescent Diodes | |
JPS55141769A (en) | Electric field light emitting element | |
GB1300067A (en) | Process for the fabrication of light-emitting semiconductor diodes | |
GB1442506A (en) | Production of yellow output radiation gallium phosphide lumin escence diodes | |
US3883888A (en) | Efficiency light emitting diode | |
GB1448606A (en) | Semiconductor luminescence diodes | |
GB1385634A (en) | Gaa1as lasers | |
JPS5642388A (en) | Semiconductor light emitting device | |
JPS6435968A (en) | Gallium arsenide/aluminum mixed crystal epitaxial wafer | |
GB1108027A (en) | Light emitting diodes | |
JPS54117692A (en) | Semiconductor light emitting diode | |
GB1353954A (en) | Methods of producing gallium phosphide light emitting diodes | |
JPS5563887A (en) | Light-emitting diode | |
FR2181573A1 (en) | Light-emitting diode - by heating aluminium-doped cadmium/magnesium telluride monocrystal in phosphorus/cadmium vapour | |
JPS5418691A (en) | Manufacture of pn-junction type light emitting diode | |
GB1328303A (en) | Ga as diode-phosphor lamps | |
JPS57193080A (en) | Plane light emission type high intensity light emitting diode | |
JPS5375881A (en) | Compound semiconductor light emitting device | |
JPS55124280A (en) | Method of fabricating light emitting diode | |
JPS5615032A (en) | Semiconductor device and manufacture thereof | |
JPS5779685A (en) | Light emitting diode device |