FR2181573A1 - Light-emitting diode - by heating aluminium-doped cadmium/magnesium telluride monocrystal in phosphorus/cadmium vapour - Google Patents

Light-emitting diode - by heating aluminium-doped cadmium/magnesium telluride monocrystal in phosphorus/cadmium vapour

Info

Publication number
FR2181573A1
FR2181573A1 FR7215378A FR7215378A FR2181573A1 FR 2181573 A1 FR2181573 A1 FR 2181573A1 FR 7215378 A FR7215378 A FR 7215378A FR 7215378 A FR7215378 A FR 7215378A FR 2181573 A1 FR2181573 A1 FR 2181573A1
Authority
FR
France
Prior art keywords
cadmium
monocrystal
phosphorus
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7215378A
Other languages
French (fr)
Other versions
FR2181573B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19722221952 priority Critical patent/DE2221952B2/en
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to FR7215378A priority patent/FR2181573A1/en
Priority to NL7206222A priority patent/NL7206222A/xx
Publication of FR2181573A1 publication Critical patent/FR2181573A1/en
Application granted granted Critical
Publication of FR2181573B1 publication Critical patent/FR2181573B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0029—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The diode is produced from a wafer of a monocrystal of an n-type solid soln. of CdTe and MgTe contg. 0.001-0.01 atom % Al as dopant by heating 15 min. to 72 h. esp., 15 min. to 10 h, in a vapour phase of P and Cd at 670-850 (670-800) esp., 670-790 degrees C to provide a wafer with a thin coating of a p-type solid soln. of CdTe and MgTe. The luminance of the emitted light is good.
FR7215378A 1972-04-27 1972-04-28 Light-emitting diode - by heating aluminium-doped cadmium/magnesium telluride monocrystal in phosphorus/cadmium vapour Granted FR2181573A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19722221952 DE2221952B2 (en) 1972-04-27 1972-04-27 Method of manufacturing a light emitting diode
FR7215378A FR2181573A1 (en) 1972-04-27 1972-04-28 Light-emitting diode - by heating aluminium-doped cadmium/magnesium telluride monocrystal in phosphorus/cadmium vapour
NL7206222A NL7206222A (en) 1972-04-27 1972-05-08

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19722221952 DE2221952B2 (en) 1972-04-27 1972-04-27 Method of manufacturing a light emitting diode
FR7215378A FR2181573A1 (en) 1972-04-27 1972-04-28 Light-emitting diode - by heating aluminium-doped cadmium/magnesium telluride monocrystal in phosphorus/cadmium vapour
NL7206222A NL7206222A (en) 1972-04-27 1972-05-08

Publications (2)

Publication Number Publication Date
FR2181573A1 true FR2181573A1 (en) 1973-12-07
FR2181573B1 FR2181573B1 (en) 1975-10-24

Family

ID=27184393

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7215378A Granted FR2181573A1 (en) 1972-04-27 1972-04-28 Light-emitting diode - by heating aluminium-doped cadmium/magnesium telluride monocrystal in phosphorus/cadmium vapour

Country Status (3)

Country Link
DE (1) DE2221952B2 (en)
FR (1) FR2181573A1 (en)
NL (1) NL7206222A (en)

Also Published As

Publication number Publication date
FR2181573B1 (en) 1975-10-24
DE2221952B2 (en) 1974-07-18
DE2221952A1 (en) 1973-11-08
NL7206222A (en) 1973-11-12

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Legal Events

Date Code Title Description
ST Notification of lapse