GB1477415A - Light emitting diodes - Google Patents
Light emitting diodesInfo
- Publication number
- GB1477415A GB1477415A GB1468875A GB1468875A GB1477415A GB 1477415 A GB1477415 A GB 1477415A GB 1468875 A GB1468875 A GB 1468875A GB 1468875 A GB1468875 A GB 1468875A GB 1477415 A GB1477415 A GB 1477415A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contacts
- substrate
- layer
- regions
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 6
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 239000002775 capsule Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
1477415 Semiconductor devices INTERNATIONAL BUSINESS MACHINES CORP 10 April 1975 [6 June 1974] 14688/75 Heading H1K [Also in Division C4] A L.E.D. is formed of monocrystalline Ga As 1 _x Px where 0À42>x>0À10. An array of LED's is formed from a structure comprising a Ga As substrate 3, a layer 2 of Ga AsP with a varying P content and a final N type layer 1 of Ga As 0À6 P 0À4 doped with Te or Sn. Zn is diffused through a mask 5 to form P regions 7 using a closed capsule process An <SP>#</SP>/ 4 antireflection layer 6, e.g. of Si 3 N 4 or SiO and contact tacts 8, 13, 14 are added. The contacts 8 are formed by depositing Ag Te 0À01 in holes 7A etched in layers 5, 6 through patterned masks 10. The mask ends are removed and the contacts sintered at 575‹C contacts 13, 14 of Ag Zn 0À02 and Al leads are added in a similar manner. Light is emitted through the substrate side by removing the light absorbing substrate 3, graded layer 2 and part of layer 1 either over the entire area of the device or in the regions of the junctions. The device is thenmounted on a substrate with the contacts adjacent one face thereof using solder ball connections described in Specification 1143,815. or by adding solder to the contacts and using a substrate with an appropriate lead pattern. In this arrangement edge emission increases the diode effective light emitting area and the use of 'incompatable' substrates, e.g. of Si containing integrated drive circuitry is possible.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47681274A | 1974-06-06 | 1974-06-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1477415A true GB1477415A (en) | 1977-06-22 |
Family
ID=23893355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1468875A Expired GB1477415A (en) | 1974-06-06 | 1975-04-10 | Light emitting diodes |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | UST979005I4 (en) |
| JP (1) | JPS516493A (en) |
| DE (1) | DE2517978A1 (en) |
| FR (1) | FR2280205A1 (en) |
| GB (1) | GB1477415A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2242783A (en) * | 1990-04-06 | 1991-10-09 | Telefunken Electronic Gmbh | Light emitting semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5129636B1 (en) * | 1970-12-25 | 1976-08-26 | ||
| US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
-
1975
- 1975-04-10 GB GB1468875A patent/GB1477415A/en not_active Expired
- 1975-04-23 DE DE19752517978 patent/DE2517978A1/en active Pending
- 1975-04-29 FR FR7514029A patent/FR2280205A1/en active Granted
- 1975-06-04 JP JP6665375A patent/JPS516493A/en active Pending
-
1977
- 1977-04-18 US US05/788,179 patent/UST979005I4/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2242783A (en) * | 1990-04-06 | 1991-10-09 | Telefunken Electronic Gmbh | Light emitting semiconductor device |
| US5194922A (en) * | 1990-04-06 | 1993-03-16 | Telefunken Electronic Gmbh | Luminescent semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS516493A (en) | 1976-01-20 |
| UST979005I4 (en) | 1979-02-06 |
| DE2517978A1 (en) | 1976-01-02 |
| FR2280205B1 (en) | 1977-07-08 |
| FR2280205A1 (en) | 1976-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5710992A (en) | Semiconductor device and manufacture therefor | |
| GB1530085A (en) | Semiconductor device manufacture | |
| GB1480592A (en) | Light emitting diodes | |
| GB1477415A (en) | Light emitting diodes | |
| GB1487024A (en) | Integral lens light emitting diode | |
| GB1499509A (en) | Light emitting diode display devices | |
| JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
| JPS57111076A (en) | Semiconductor light-emitting device | |
| JPS5591186A (en) | Light emitting diode display device | |
| JPS54107689A (en) | Semiconductor laser element | |
| JPS5779684A (en) | Light emitting diode device | |
| JPS6430277A (en) | Light convergent type light-emitting device | |
| GB1392955A (en) | Light emitting diode | |
| JPS5795683A (en) | Semiconductor light emitting display device | |
| JPS56157077A (en) | Semiconductor light emitting device | |
| JPS5578580A (en) | Manufacture of semiconductor light-emitting diode | |
| JPS5376692A (en) | Semiconductor light emitting device | |
| JPS56108287A (en) | Semiconductor light emission element | |
| JPS5565483A (en) | Manufacture of semiconductor light emitting element | |
| JPS5736876A (en) | Semiconductor photodetector | |
| JPS54127691A (en) | Semiconductor light emission device | |
| JPS52147088A (en) | Light emitting device | |
| JPS5553469A (en) | Light emission diode | |
| JPS6433975A (en) | Manufacture of semiconductor light emitting device | |
| JPS6459981A (en) | Manufacture of semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |