JPS5785259A - Light drive type thyristor - Google Patents

Light drive type thyristor

Info

Publication number
JPS5785259A
JPS5785259A JP55160706A JP16070680A JPS5785259A JP S5785259 A JPS5785259 A JP S5785259A JP 55160706 A JP55160706 A JP 55160706A JP 16070680 A JP16070680 A JP 16070680A JP S5785259 A JPS5785259 A JP S5785259A
Authority
JP
Japan
Prior art keywords
layer
layers
dopant
diffused
carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55160706A
Other languages
Japanese (ja)
Inventor
Nobutake Konishi
Mutsuhiro Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55160706A priority Critical patent/JPS5785259A/en
Publication of JPS5785259A publication Critical patent/JPS5785259A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the sensitivity of optical ignition while ameliorating di/dt resisting quantity by forming a concave section, the maximum diameter of the bottom thereof is within the twice of the diffusion length of carriers in an adjacent base, to one part of an emitter layer of a light receiving section. CONSTITUTION:Gallium or aluminum is diffused as a dopant from a pair of N type silicon main surfaces 101, 102, a pE layer 1 and the pB layer 3 are formed simultaneously, and nE layers 4 and nEO layers 40 are diffused from the main surface 102 while using phosphorus as a dopant. The excessive nE layers are removed through a selective chemical etching method while a short-circuiting hole 7 and the concave sections 401 of the light receiving section region are shaped. The width W of the concave sections 401 is within the twice of the diffusion length L of carriers in the pB layer 3 at that time.
JP55160706A 1980-11-17 1980-11-17 Light drive type thyristor Pending JPS5785259A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160706A JPS5785259A (en) 1980-11-17 1980-11-17 Light drive type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160706A JPS5785259A (en) 1980-11-17 1980-11-17 Light drive type thyristor

Publications (1)

Publication Number Publication Date
JPS5785259A true JPS5785259A (en) 1982-05-27

Family

ID=15720698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160706A Pending JPS5785259A (en) 1980-11-17 1980-11-17 Light drive type thyristor

Country Status (1)

Country Link
JP (1) JPS5785259A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157159A (en) * 1982-03-13 1983-09-19 Toshiba Corp Photo-driven type semiconductor device
FR2541513A1 (en) * 1983-02-18 1984-08-24 Westinghouse Electric Corp SELF-PROTECTED THYRISTOR AND MANUFACTURING METHOD THEREOF
JPS61113279A (en) * 1984-11-08 1986-05-31 Fuji Electric Co Ltd Photo thyristor
US5169790A (en) * 1990-03-12 1992-12-08 Siemens Aktiengesellschaft Method of making thyristor having low reflection light-triggering structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157159A (en) * 1982-03-13 1983-09-19 Toshiba Corp Photo-driven type semiconductor device
JPH0346983B2 (en) * 1982-03-13 1991-07-17 Tokyo Shibaura Electric Co
FR2541513A1 (en) * 1983-02-18 1984-08-24 Westinghouse Electric Corp SELF-PROTECTED THYRISTOR AND MANUFACTURING METHOD THEREOF
JPS61113279A (en) * 1984-11-08 1986-05-31 Fuji Electric Co Ltd Photo thyristor
US5169790A (en) * 1990-03-12 1992-12-08 Siemens Aktiengesellschaft Method of making thyristor having low reflection light-triggering structure

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