KR810002083B1 - Fabricating method of silicon controlled rectifier element - Google Patents

Fabricating method of silicon controlled rectifier element

Info

Publication number
KR810002083B1
KR810002083B1 KR8002444A KR800002444A KR810002083B1 KR 810002083 B1 KR810002083 B1 KR 810002083B1 KR 8002444 A KR8002444 A KR 8002444A KR 800002444 A KR800002444 A KR 800002444A KR 810002083 B1 KR810002083 B1 KR 810002083B1
Authority
KR
South Korea
Prior art keywords
layer
type
controlled rectifier
silicon controlled
fabricating method
Prior art date
Application number
KR8002444A
Other languages
Korean (ko)
Inventor
S Lim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to KR8002444A priority Critical patent/KR810002083B1/en
Application granted granted Critical
Publication of KR810002083B1 publication Critical patent/KR810002083B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Abstract

In this method, where thick wafer can be used, 3 heavydoped p-type layer which is isolated by constant spacing (1a) is diffused on the thick p-type wafer and after the first n-type impurity layer (1) is deposited on said layer, lightdoped p-type layer(16) is diffused in the row of (1a), and then the secondary n-type impurity layer is deposited. After this process, through high-temperature diffusion process after diffusing heavy-doped p-type layer (1c) in the row of (1b) a PNPN structure of SCR can be fabricated.
KR8002444A 1980-06-21 1980-06-21 Fabricating method of silicon controlled rectifier element KR810002083B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR8002444A KR810002083B1 (en) 1980-06-21 1980-06-21 Fabricating method of silicon controlled rectifier element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR8002444A KR810002083B1 (en) 1980-06-21 1980-06-21 Fabricating method of silicon controlled rectifier element

Publications (1)

Publication Number Publication Date
KR810002083B1 true KR810002083B1 (en) 1981-12-27

Family

ID=19216887

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8002444A KR810002083B1 (en) 1980-06-21 1980-06-21 Fabricating method of silicon controlled rectifier element

Country Status (1)

Country Link
KR (1) KR810002083B1 (en)

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