JP2005340717A - 化合物半導体エピタキシャル基板 - Google Patents
化合物半導体エピタキシャル基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 159
- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 150000001875 compounds Chemical class 0.000 title claims abstract description 127
- 239000013078 crystal Substances 0.000 claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 32
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- -1 InAlP Inorganic materials 0.000 claims 2
- 239000007789 gas Substances 0.000 description 21
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QORIDDWXQPAYGJ-UHFFFAOYSA-N [AsH3].[AsH3] Chemical compound [AsH3].[AsH3] QORIDDWXQPAYGJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical group [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
反りが少ない化合物半導体エピタキシャル基板を提供する。
【解決手段】
単結晶基板上にエピタキシャル成長させることにより形成され、該単結晶基板と格子定数が異なり、格子緩和が生じていない格子不整合化合物半導体層を有してなり、さらに、該格子不整合化合物半導体層とは単結晶基板に対する格子定数の大小関係が逆の別化合物半導体からなり、格子緩和を生じていない応力補償層を該単結晶基板の同一面側に有してなる化合物半導体エピタキシャル基板。単結晶基板上に化合物半導体の層をエピタキシャル成長させる化合物半導体エピタキシャル基板の製造方法において、該単結晶基板と格子定数が異なる前記化合物半導体層と前記応力補償層とをエピタキシャル成長させる製造方法。
【選択図】 図7
Description
図3に示した構造のエピタキシャル基板をMOCVD法により結晶成長した。単結晶基板としては3インチ径の半絶縁性GaAs基板を用いた。チャネル層のIn組成は0.20、膜厚は150Åとした。成長終了後のエピタキシャル基板を反応炉から取り出し、2次元電子ガスの電子ガス濃度、およびHall移動度をVan der Pauw法により測定した。室温での2次元電子ガス濃度は1.72×1012/cm2、Hall移動度は6230cm2/Vsであった。市販の反り測定装置により化合物半導体エピタキシャル基板の反りを測定した。図6はその鳥瞰図および断面図である。格子不整合化合物半導体層であるInGaAs層の引っ張り歪により基板がお椀型に反っていることがわかる。この反りを数値化した値で一般的に用いられている値であるSORI(ウエハ表面上で、焦平面上部の最も高い段差を持つ場所と、焦平面下部の最も低い段差を持つ場所との総合差の絶対値)は5.62μmであった。
図7に示した構造において、応力補償層であるAlGaAsP層3のPの量を示すxが0.0225となるようにした以外は比較例1と同様にして化合物半導体エピタキシャル基板をMOCVD法により製造した。Hall移動度等の電気特性は比較例1のものと誤差の範囲内で変わらず、応力補償層を設けたことによる電気的特性の低下はなかった。SORI値は3.86μmとPの量がゼロの比較例1のものと比較して小さくなっていた。
図7に示した構造でAlGaAsP層3のPの量を示すxが0.035となるようにした以外は比較例1と同様にして化合物半導体エピタキシャル基板をMOCVD法により製造した。Hall移動度等の電気特性は比較例1のものと誤差の範囲内で変わらず、応力補償層を設けたことによる電気的特性の低下はなかった。SORI値は1.85μmと比較例1のものと比較して大幅に改善した。
Claims (10)
- 単結晶基板上にエピタキシャル成長させることにより形成され、該単結晶基板と格子定数が異なり、格子緩和が生じていない格子不整合化合物半導体層を有してなる化合物半導体エピタキシャル基板であって、該格子不整合化合物半導体層とは単結晶基板に対する格子定数の大小関係が逆の別化合物半導体からなり、格子緩和を生じていない応力補償層を該単結晶基板の該格子不整合化合物半導体層と同一面側に有してなることを特徴とする化合物半導体エピタキシャル基板。
- 単結晶基板が、GaAs、GaP、InP、Si、Ge、SiC、GaN、AlN、サファイアのいずれかである請求項1に記載の化合物半導体エピタキシャル基板。
- 格子不整合化合物半導体層が、InGaAs、InGaAsP、InGaP、InAs、GaAsSb、InGaNのいずれか一つ以上である請求項1または2に記載の化合物半導体エピタキシャル基板。
- 応力補償層がInGaP、GaAsP、InAlP、SiGe、AlAsP、AlGaAsP、InGaAs、InAlP、AlGaNのいずれか一つ以上からなる請求項1〜3のいずれかに記載の化合物半導体エピタキシャル基板。
- 請求項1〜4のいずれかに記載の化合物半導体エピタキシャル基板を用いてなることを特徴とする化合物半導体素子。
- 単結晶基板の一方の面上に化合物半導体の層をエピタキシャル成長させる化合物半導体エピタキシャル基板の製造方法において、該単結晶基板と格子定数が異なり、格子緩和が生じていない格子不整合化合物半導体層と、該格子不整合化合物半導体層とは単結晶基板に対する格子定数の大小関係が逆の別化合物半導体からなり、格子緩和を生じていない応力補償層とを、エピタキシャル成長させることを特徴とする化合物半導体エピタキシャル基板の製造方法。
- 単結晶基板がGaAs、GaP、InP、Si、Ge、SiC、GaN、AlN、サファイアのいずれかである請求項6に記載の製造方法。
- 格子不整合化合物半導体層が、InGaAs、InGaAsP、InGaP、InAs、GaAsSb、InGaNのいずれか一つ以上である請求項6または7に記載の製造方法。
- 応力補償層がInGaP、GaAsP、InAlP、SiGe、AlAsP、AlGaAsP、InGaAs、InAlP、AlGaNのいずれか一つ以上からなる請求項6〜8のいずれかに記載の製造方法。
- 単結晶基板の一方の面上に化合物半導体の層をエピタキシャル成長させてなり、該単結晶基板と格子定数が異なり、格子緩和が生じていない格子不整合化合物半導体層を有する化合物半導体エピタキシャル基板に、該格子不整合化合物半導体層とは単結晶基板に対する格子定数の大小関係が逆の別化合物半導体からなり、格子緩和を生じていない応力補償層を設けることによる化合物半導体エピタキシャル基板の反り防止方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004160847A JP4867137B2 (ja) | 2004-05-31 | 2004-05-31 | 化合物半導体エピタキシャル基板 |
PCT/JP2005/010090 WO2005117076A1 (ja) | 2004-05-31 | 2005-05-26 | 化合物半導体エピタキシャル基板及びその製造方法 |
KR1020067027234A KR101151933B1 (ko) | 2004-05-31 | 2005-05-26 | 화합물 반도체 에피택셜 기판 및 그 제조 방법 |
US11/597,613 US8169004B2 (en) | 2004-05-31 | 2005-05-26 | Compound semiconductor epitaxial substrate and process for producing the same |
TW094117553A TW200603268A (en) | 2004-05-31 | 2005-05-27 | Epitaxial compound semiconductor substrate and manufacturing method therefor |
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JP2004160847A JP4867137B2 (ja) | 2004-05-31 | 2004-05-31 | 化合物半導体エピタキシャル基板 |
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JP2005340717A true JP2005340717A (ja) | 2005-12-08 |
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JP (1) | JP4867137B2 (ja) |
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Cited By (1)
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JP5451750B2 (ja) * | 2009-03-31 | 2014-03-26 | 旭化成エレクトロニクス株式会社 | 半導体デバイス |
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US20070044832A1 (en) * | 2005-08-25 | 2007-03-01 | Fritzemeier Leslie G | Photovoltaic template |
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US8415187B2 (en) | 2009-01-28 | 2013-04-09 | Solexant Corporation | Large-grain crystalline thin-film structures and devices and methods for forming the same |
WO2010116699A1 (ja) * | 2009-04-06 | 2010-10-14 | 住友化学株式会社 | 半導体基板、半導体基板の製造方法、半導体基板の判定方法、および電子デバイス |
KR101657327B1 (ko) * | 2009-04-07 | 2016-09-13 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판, 반도체 기판의 제조 방법 및 전자 디바이스 |
JP5627871B2 (ja) * | 2009-10-30 | 2014-11-19 | フューチャー ライト リミテッド ライアビリティ カンパニー | 半導体素子およびその製造方法 |
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US8900969B2 (en) * | 2012-01-27 | 2014-12-02 | Skyworks Solutions, Inc. | Methods of stress balancing in gallium arsenide wafer processing |
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CN106030758B (zh) * | 2014-03-28 | 2020-07-17 | 英特尔公司 | 选择性外延生长的基于iii-v材料的器件 |
US9530719B2 (en) | 2014-06-13 | 2016-12-27 | Skyworks Solutions, Inc. | Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers |
JP6287951B2 (ja) * | 2015-05-14 | 2018-03-07 | 三菱電機株式会社 | 化合物半導体装置 |
JP2018170458A (ja) * | 2017-03-30 | 2018-11-01 | 株式会社東芝 | 高出力素子 |
CN109994582B (zh) * | 2018-01-02 | 2020-08-25 | 山东华光光电子股份有限公司 | 一种降低GaAs基外延片翘曲度的DBR结构 |
GB2612372A (en) * | 2021-11-02 | 2023-05-03 | Iqe Plc | A layered structure |
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TW200603268A (en) | 2006-01-16 |
JP4867137B2 (ja) | 2012-02-01 |
US8169004B2 (en) | 2012-05-01 |
KR20070032721A (ko) | 2007-03-22 |
US20070215905A1 (en) | 2007-09-20 |
WO2005117076A1 (ja) | 2005-12-08 |
TWI381426B (ja) | 2013-01-01 |
KR101151933B1 (ko) | 2012-06-01 |
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