JP2005277106A - 回路装置及びその製造方法 - Google Patents
回路装置及びその製造方法 Download PDFInfo
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- JP2005277106A JP2005277106A JP2004088145A JP2004088145A JP2005277106A JP 2005277106 A JP2005277106 A JP 2005277106A JP 2004088145 A JP2004088145 A JP 2004088145A JP 2004088145 A JP2004088145 A JP 2004088145A JP 2005277106 A JP2005277106 A JP 2005277106A
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Abstract
【解決手段】 基板1の面にアンダーバンプメタルを形成し、該アンダーバンプメタル上に接続用バンプ12を設けた回路装置であって、前記基板1の面に設けられた電極パッドパターン4と共に配線パターン2の少なくとも一部を露出させてパッシベーション膜3を形成し、アンダーバンプメタル形成に際して前記電極パッドパターン4及び前記配線パターン2の露出部分に金属膜を積層形成する構成である。
【選択図】 図1
Description
前記基板面に設けられた少なくとも一部の配線パターン上にも前記UBMと同材質、同膜厚の金属膜が積層形成されていることを特徴としている。
前記基板面に設けられた電極パッドパターンと共に配線パターンの少なくとも一部を露出させてパッシベーション膜を形成し、前記UBM形成工程にて前記電極パッドパターン及び前記配線パターンの露出部分に金属膜を積層形成することを特徴としている。
2 配線パターン
3 パッシベーション膜
4 電極パッドパターン
5 コイル
6,7,10 UBM
8,9,11 金属膜
12 接続用金属バンプ
Claims (8)
- 基板面にアンダーバンプメタルを形成し、該アンダーバンプメタル上に接続用バンプを設けた回路装置であって、
前記基板面に設けられた少なくとも一部の配線パターン上にも前記アンダーバンプメタルと同材質、同膜厚の金属膜が積層形成されていることを特徴とする回路装置。 - 前記少なくとも一部の配線パターンはコイルを構成するものである請求項1記載の回路装置。
- 前記アンダーバンプメタルは上層がAu膜であり、その下層がNi,Pt,Pd又はW膜である請求項1又は2記載の回路装置。
- 前記配線パターンがAl膜であり、前記配線パターンと前記下層のNi,Pt,Pd又はW膜間に最下層としてのTi,Cu,Cr,CrNi又はGe膜が介在している請求項3記載の回路装置。
- 基板面にアンダーバンプメタルを形成するアンダーバンプメタル形成工程と、該アンダーバンプメタル上に接続用バンプを形成するバンプ形成工程とを有する回路装置の製造方法であって、
前記基板面に設けられた電極パッドパターンと共に配線パターンの少なくとも一部を露出させてパッシベーション膜を形成し、前記アンダーバンプメタル形成工程にて前記電極パッドパターン及び前記配線パターンの露出部分に金属膜を積層形成することを特徴とする回路装置の製造方法。 - 前記電極パッドパターンと共に配線パターンの少なくとも一部を、露光現像処理により露出させて前記パッシベーション膜を形成する請求項5記載の回路装置の製造方法。
- 前記アンダーバンプメタル形成工程では、下層としてのNi,Pt,Pd又はW膜、上層としてのAu膜の順に積層形成する請求項5又は6記載の回路装置の製造方法。
- 前記電極パッドパターン及び配線パターンがAl膜であり、前記アンダーバンプメタル形成工程では、最下層としてのTi,Cu,Cr,CrNi又はGe膜、下層としてのNi,Pt,Pd又はW膜、上層としてのAu膜の順に積層形成する請求項5又は6記載の回路装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2004088145A JP3851320B2 (ja) | 2004-03-25 | 2004-03-25 | 回路装置及びその製造方法 |
EP05004672A EP1585174A1 (en) | 2004-03-25 | 2005-03-03 | Circuit device and manufacturing method of the same |
US11/071,574 US7125788B2 (en) | 2004-03-25 | 2005-03-04 | Circuit device and method of manufacturing the circuit device |
CNB2005100589746A CN100379322C (zh) | 2004-03-25 | 2005-03-25 | 电路组件及其制造方法 |
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JP2004088145A JP3851320B2 (ja) | 2004-03-25 | 2004-03-25 | 回路装置及びその製造方法 |
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JP2005277106A true JP2005277106A (ja) | 2005-10-06 |
JP3851320B2 JP3851320B2 (ja) | 2006-11-29 |
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JP2004088145A Expired - Fee Related JP3851320B2 (ja) | 2004-03-25 | 2004-03-25 | 回路装置及びその製造方法 |
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US (1) | US7125788B2 (ja) |
EP (1) | EP1585174A1 (ja) |
JP (1) | JP3851320B2 (ja) |
CN (1) | CN100379322C (ja) |
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JPWO2008075537A1 (ja) * | 2006-12-18 | 2010-04-08 | パナソニック株式会社 | 電極構造体およびバンプ形成方法 |
JP2013527961A (ja) * | 2010-05-07 | 2013-07-04 | ガリレオ バキューム システムズ ソチエタ ペル アチオーニ イン リクイダツイオーネ | アンテナを製造するための方法およびシステム |
JP2019004186A (ja) * | 2018-10-02 | 2019-01-10 | 株式会社ニコン | 半導体装置及びその製造方法、撮像装置、並びに電子カメラ |
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US7858438B2 (en) * | 2007-06-13 | 2010-12-28 | Himax Technologies Limited | Semiconductor device, chip package and method of fabricating the same |
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JP2019004186A (ja) * | 2018-10-02 | 2019-01-10 | 株式会社ニコン | 半導体装置及びその製造方法、撮像装置、並びに電子カメラ |
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JP3851320B2 (ja) | 2006-11-29 |
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