JP2005268781A - 多重露光方法、マイクロリソグラフィー投影露光装置および投影系 - Google Patents

多重露光方法、マイクロリソグラフィー投影露光装置および投影系 Download PDF

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Publication number
JP2005268781A
JP2005268781A JP2005059886A JP2005059886A JP2005268781A JP 2005268781 A JP2005268781 A JP 2005268781A JP 2005059886 A JP2005059886 A JP 2005059886A JP 2005059886 A JP2005059886 A JP 2005059886A JP 2005268781 A JP2005268781 A JP 2005268781A
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Japan
Prior art keywords
exposure
projection system
projection
illumination
substrate
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JP2005059886A
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English (en)
Japanese (ja)
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JP2005268781A5 (enExample
Inventor
Ralf Scharnweber
シャールンヴェーバー ラルフ
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication of JP2005268781A publication Critical patent/JP2005268781A/ja
Publication of JP2005268781A5 publication Critical patent/JP2005268781A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005059886A 2004-03-16 2005-03-04 多重露光方法、マイクロリソグラフィー投影露光装置および投影系 Pending JP2005268781A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004013886A DE102004013886A1 (de) 2004-03-16 2004-03-16 Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem

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JP2010216895A Division JP2011029655A (ja) 2004-03-16 2010-09-28 多重露光方法、マイクロリソグラフィー投影露光装置および投影系

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JP2005268781A5 JP2005268781A5 (enExample) 2008-04-03

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JP2010216895A Pending JP2011029655A (ja) 2004-03-16 2010-09-28 多重露光方法、マイクロリソグラフィー投影露光装置および投影系

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US (3) US7561253B2 (enExample)
JP (2) JP2005268781A (enExample)
DE (1) DE102004013886A1 (enExample)

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JP2008047744A (ja) * 2006-08-18 2008-02-28 Nikon Corp 照明光学装置、露光装置、およびデバイス製造方法
JPWO2008007633A1 (ja) * 2006-07-12 2009-12-10 株式会社ニコン 照明光学装置、露光装置、およびデバイス製造方法
JP2010197629A (ja) * 2009-02-25 2010-09-09 Nikon Corp 投影光学装置、露光装置、およびデバイス製造方法
JP2010197630A (ja) * 2009-02-25 2010-09-09 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法
JP2010287643A (ja) * 2009-06-10 2010-12-24 Nikon Corp 投影光学装置、露光装置、露光方法およびデバイス製造方法

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DE102004013886A1 (de) * 2004-03-16 2005-10-06 Carl Zeiss Smt Ag Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem
US20060109463A1 (en) * 2004-11-22 2006-05-25 Asml Netherlands B.V. Latent overlay metrology
DE102005042005A1 (de) * 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
TWI327257B (en) * 2006-03-03 2010-07-11 Chi Mei Optoelectronics Corp Exposing method for manufacturing flat panel display
US7884921B2 (en) * 2006-04-12 2011-02-08 Nikon Corporation Illumination optical apparatus, projection exposure apparatus, projection optical system, and device manufacturing method
KR101486589B1 (ko) * 2006-04-17 2015-01-26 가부시키가이샤 니콘 조명 광학 장치, 노광 장치, 및 디바이스 제조 방법
US20080085471A1 (en) * 2006-10-10 2008-04-10 Anderson Brent A Photolithographic method using multiple photoexposure apparatus
DE102007032181B4 (de) 2007-07-11 2012-02-16 Karlsruher Institut für Technologie Optische Anordnung und ihre Verwendung
US8107054B2 (en) 2007-09-18 2012-01-31 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus
US20100053588A1 (en) * 2008-08-29 2010-03-04 Nikon Corporation Substrate Stage movement patterns for high throughput While Imaging a Reticle to a pair of Imaging Locations
US8417069B2 (en) * 2009-06-30 2013-04-09 Verizon Patent And Licensing Inc. Multi dimension high security communication over multi mode fiber waveguide
WO2013117435A1 (en) * 2012-02-10 2013-08-15 Asml Netherlands B.V. A lithography apparatus and system, a method of calibrating a lithography apparatus, and device manufacturing methods
JP5912654B2 (ja) * 2012-02-24 2016-04-27 株式会社東芝 基板保持装置及びパターン転写装置並びにパターン転写方法
CN103019041B (zh) * 2012-11-26 2014-10-22 京东方科技集团股份有限公司 一种曝光机
TWI676083B (zh) * 2013-09-25 2019-11-01 荷蘭商Ａｓｍｌ荷蘭公司 光束傳遞裝置及方法
US9746777B2 (en) * 2014-01-09 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Exposure apparatus and exposure method thereof
DE102014215088A1 (de) * 2014-07-31 2016-02-04 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung für ein Projektionsbelichtungssystem
DE102014221173A1 (de) * 2014-10-17 2016-04-21 Carl Zeiss Smt Gmbh Strahlungsquellenmodul
TWI701517B (zh) 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 光學構件
DE102014226918A1 (de) * 2014-12-23 2016-06-23 Carl Zeiss Smt Gmbh Optische Komponente
DE102015212878A1 (de) * 2015-07-09 2017-01-12 Carl Zeiss Smt Gmbh Strahlführungsvorrichtung
DE102022205272A1 (de) 2022-05-25 2023-11-30 Carl Zeiss Smt Gmbh Katadioptrisches Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren
DE102022205273B3 (de) 2022-05-25 2023-01-26 Carl Zeiss Smt Gmbh Beleuchtungssystem, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren

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US20100173250A1 (en) 2010-07-08
US7561253B2 (en) 2009-07-14
US20080311526A1 (en) 2008-12-18
US8634060B2 (en) 2014-01-21
JP2011029655A (ja) 2011-02-10
US7875418B2 (en) 2011-01-25
US20050213070A1 (en) 2005-09-29
DE102004013886A1 (de) 2005-10-06

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