JP2005268396A - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP2005268396A JP2005268396A JP2004076168A JP2004076168A JP2005268396A JP 2005268396 A JP2005268396 A JP 2005268396A JP 2004076168 A JP2004076168 A JP 2004076168A JP 2004076168 A JP2004076168 A JP 2004076168A JP 2005268396 A JP2005268396 A JP 2005268396A
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- plasma generation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】 複数の貫通孔を備えている隔壁本体と、当該隔壁本体のプラズマ生成空間側に配置され、隔壁本体に備えられている前記貫通孔に対応する位置にラジカル通過孔を有する制御板とで隔壁板を形成して課題を解決した。
【選択図】 図4
Description
2、3 制御板
4 凸部
5 貫通孔
11 基板
12 真空反応室
12a 上容器
12b 下容器
12b−1 排気ポート
13 排気機構
14 隔壁板
15 プラズマ生成空間
16 基板処理空間
17 基板保持機構
18 ヒータ
19 プラズマ
20 電極
21a、21b 絶縁部材
22 導電材固定部
23a 酸素ガス導入パイプ
23b クリーニングガス導入パイプ
24 成膜ガス拡散空間
25 貫通孔
25a ラジカル通過孔
25b ラジカルの逃げ孔
28a 成膜ガス導入パイプ
28b 成膜ガス導入口
29 電力導入棒
31 絶縁物
41 接地電位
Claims (2)
- 真空反応室内をラジカルが通過する複数の貫通孔を持つ隔壁板を用いてプラズマ生成空間と基板処理空間とに分離し、プラズマ生成空間にガスを導入してプラズマによりラジカルを発生させ、このラジカルを前記隔壁板にある複数の貫通孔を通して基板処理空間に導入し、当該基板処理空間に配置されている基板に処理を行う装置において、
複数の貫通孔を備えている隔壁本体と、
当該隔壁本体のプラズマ生成空間側に配置され、当該隔壁本体に備えられている前記貫通孔に対応する位置にラジカル通過孔を有する制御板とで前記隔壁板が形成されていることを特徴とする真空処理装置。 - 制御板はラジカル通過孔を有する凸部を前記隔壁本体に備えられている貫通孔に対応する位置に備えているいることを特徴とする請求項1記載の真空処理装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004076168A JP4451684B2 (ja) | 2004-03-17 | 2004-03-17 | 真空処理装置 |
TW094107341A TW200535962A (en) | 2004-03-17 | 2005-03-10 | Vacuum processing apparatus |
KR1020050021314A KR101183486B1 (ko) | 2004-03-17 | 2005-03-15 | 진공처리 장치 |
EP05290582A EP1577420A1 (en) | 2004-03-17 | 2005-03-16 | Vacuum processing apparatus with showerhead |
US10/907,023 US7981216B2 (en) | 2004-03-17 | 2005-03-16 | Vacuum processing apparatus |
SG200501608A SG115765A1 (en) | 2004-03-17 | 2005-03-16 | Vacuum processing apparatus |
CN2010101261975A CN101812675B (zh) | 2004-03-17 | 2005-03-17 | 真空处理装置 |
CN2005100548229A CN1670920B (zh) | 2004-03-17 | 2005-03-17 | 真空处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004076168A JP4451684B2 (ja) | 2004-03-17 | 2004-03-17 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005268396A true JP2005268396A (ja) | 2005-09-29 |
JP4451684B2 JP4451684B2 (ja) | 2010-04-14 |
Family
ID=34836541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004076168A Expired - Lifetime JP4451684B2 (ja) | 2004-03-17 | 2004-03-17 | 真空処理装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7981216B2 (ja) |
EP (1) | EP1577420A1 (ja) |
JP (1) | JP4451684B2 (ja) |
KR (1) | KR101183486B1 (ja) |
CN (2) | CN101812675B (ja) |
SG (1) | SG115765A1 (ja) |
TW (1) | TW200535962A (ja) |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006289359A (ja) * | 2005-04-01 | 2006-10-26 | Jusung Engineering Co Ltd | ガス噴射装置 |
WO2008032745A1 (en) | 2006-09-13 | 2008-03-20 | Canon Anelva Corporation | Magnetoresistive element manufacturing method, and multi-chamber apparatus for manufacturing the magnetoresistive element |
JP2009539269A (ja) * | 2006-05-30 | 2009-11-12 | アプライド マテリアルズ インコーポレイテッド | 誘電性ギャップ充填のためのプロセスチャンバ |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US8563445B2 (en) | 2010-03-05 | 2013-10-22 | Applied Materials, Inc. | Conformal layers by radical-component CVD |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8629067B2 (en) | 2009-12-30 | 2014-01-14 | Applied Materials, Inc. | Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio |
US8647992B2 (en) | 2010-01-06 | 2014-02-11 | Applied Materials, Inc. | Flowable dielectric using oxide liner |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
Families Citing this family (10)
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DE102005055468A1 (de) * | 2005-11-22 | 2007-05-24 | Aixtron Ag | Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor |
KR100872994B1 (ko) * | 2007-04-30 | 2008-12-09 | 주식회사 케이씨텍 | 플라즈마 발생장치 |
KR101216790B1 (ko) * | 2008-07-31 | 2012-12-28 | 캐논 아네르바 가부시키가이샤 | 플라즈마 처리 장치 및 전자 디바이스의 제조 방법 |
US9449859B2 (en) * | 2009-10-09 | 2016-09-20 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
US9004006B2 (en) * | 2010-04-28 | 2015-04-14 | Applied Materials, Inc. | Process chamber lid design with built-in plasma source for short lifetime species |
TWI427183B (zh) * | 2010-11-25 | 2014-02-21 | Ind Tech Res Inst | 電漿處理裝置 |
CN103388132B (zh) * | 2012-05-11 | 2015-11-25 | 中微半导体设备(上海)有限公司 | 气体喷淋头、其制造方法及薄膜生长反应器 |
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US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
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Family Cites Families (20)
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TW279240B (en) * | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
USRE39969E1 (en) | 1997-04-11 | 2008-01-01 | Tokyo Electron Limited | Processing system |
US6024799A (en) * | 1997-07-11 | 2000-02-15 | Applied Materials, Inc. | Chemical vapor deposition manifold |
JP2000345349A (ja) | 1999-06-04 | 2000-12-12 | Anelva Corp | Cvd装置 |
US6892669B2 (en) | 1998-02-26 | 2005-05-17 | Anelva Corporation | CVD apparatus |
JP4151862B2 (ja) * | 1998-02-26 | 2008-09-17 | キヤノンアネルバ株式会社 | Cvd装置 |
US6086677A (en) * | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6302964B1 (en) * | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6190732B1 (en) * | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6245192B1 (en) * | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
JP4220075B2 (ja) * | 1999-08-20 | 2009-02-04 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
KR100378871B1 (ko) | 2000-02-16 | 2003-04-07 | 주식회사 아펙스 | 라디칼 증착을 위한 샤워헤드장치 |
TW527436B (en) * | 2000-06-23 | 2003-04-11 | Anelva Corp | Chemical vapor deposition system |
KR100419756B1 (ko) * | 2000-06-23 | 2004-02-21 | 아넬바 가부시기가이샤 | 박막 형성 장치 |
US6886491B2 (en) * | 2001-03-19 | 2005-05-03 | Apex Co. Ltd. | Plasma chemical vapor deposition apparatus |
JP3891267B2 (ja) * | 2001-12-25 | 2007-03-14 | キヤノンアネルバ株式会社 | シリコン酸化膜作製方法 |
JP3837718B2 (ja) | 2002-03-12 | 2006-10-25 | キヤノンアネルバ株式会社 | Cvd装置及びcvd装置における成膜後の後処理工程を行う方法 |
US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
JP4306403B2 (ja) | 2003-10-23 | 2009-08-05 | 東京エレクトロン株式会社 | シャワーヘッド構造及びこれを用いた成膜装置 |
-
2004
- 2004-03-17 JP JP2004076168A patent/JP4451684B2/ja not_active Expired - Lifetime
-
2005
- 2005-03-10 TW TW094107341A patent/TW200535962A/zh unknown
- 2005-03-15 KR KR1020050021314A patent/KR101183486B1/ko active IP Right Grant
- 2005-03-16 SG SG200501608A patent/SG115765A1/en unknown
- 2005-03-16 EP EP05290582A patent/EP1577420A1/en not_active Withdrawn
- 2005-03-16 US US10/907,023 patent/US7981216B2/en not_active Expired - Fee Related
- 2005-03-17 CN CN2010101261975A patent/CN101812675B/zh active Active
- 2005-03-17 CN CN2005100548229A patent/CN1670920B/zh active Active
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006289359A (ja) * | 2005-04-01 | 2006-10-26 | Jusung Engineering Co Ltd | ガス噴射装置 |
JP2009539269A (ja) * | 2006-05-30 | 2009-11-12 | アプライド マテリアルズ インコーポレイテッド | 誘電性ギャップ充填のためのプロセスチャンバ |
WO2008032745A1 (en) | 2006-09-13 | 2008-03-20 | Canon Anelva Corporation | Magnetoresistive element manufacturing method, and multi-chamber apparatus for manufacturing the magnetoresistive element |
US8119018B2 (en) | 2006-09-13 | 2012-02-21 | Canon Anelva Corporation | Magnetoresistive effect element manufacturing method and multi-chamber apparatus for manufacturing magnetoresistive effect element |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8629067B2 (en) | 2009-12-30 | 2014-01-14 | Applied Materials, Inc. | Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio |
US8647992B2 (en) | 2010-01-06 | 2014-02-11 | Applied Materials, Inc. | Flowable dielectric using oxide liner |
US8563445B2 (en) | 2010-03-05 | 2013-10-22 | Applied Materials, Inc. | Conformal layers by radical-component CVD |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
Also Published As
Publication number | Publication date |
---|---|
US7981216B2 (en) | 2011-07-19 |
TWI349951B (ja) | 2011-10-01 |
KR20060043636A (ko) | 2006-05-15 |
KR101183486B1 (ko) | 2012-09-20 |
TW200535962A (en) | 2005-11-01 |
CN1670920A (zh) | 2005-09-21 |
CN101812675A (zh) | 2010-08-25 |
EP1577420A1 (en) | 2005-09-21 |
CN101812675B (zh) | 2011-11-16 |
CN1670920B (zh) | 2010-04-14 |
JP4451684B2 (ja) | 2010-04-14 |
SG115765A1 (en) | 2005-10-28 |
US20050217576A1 (en) | 2005-10-06 |
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