SG115765A1 - Vacuum processing apparatus - Google Patents
Vacuum processing apparatusInfo
- Publication number
- SG115765A1 SG115765A1 SG200501608A SG200501608A SG115765A1 SG 115765 A1 SG115765 A1 SG 115765A1 SG 200501608 A SG200501608 A SG 200501608A SG 200501608 A SG200501608 A SG 200501608A SG 115765 A1 SG115765 A1 SG 115765A1
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- vacuum processing
- vacuum
- processing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004076168A JP4451684B2 (ja) | 2004-03-17 | 2004-03-17 | 真空処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG115765A1 true SG115765A1 (en) | 2005-10-28 |
Family
ID=34836541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200501608A SG115765A1 (en) | 2004-03-17 | 2005-03-16 | Vacuum processing apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US7981216B2 (ja) |
EP (1) | EP1577420A1 (ja) |
JP (1) | JP4451684B2 (ja) |
KR (1) | KR101183486B1 (ja) |
CN (2) | CN1670920B (ja) |
SG (1) | SG115765A1 (ja) |
TW (1) | TW200535962A (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101153161B1 (ko) * | 2005-04-01 | 2012-06-18 | 주성엔지니어링(주) | 가스분사장치 및 이를 포함하는 액정표시소자의 제조장치 |
DE102005055468A1 (de) * | 2005-11-22 | 2007-05-24 | Aixtron Ag | Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor |
US20070277734A1 (en) * | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US8119018B2 (en) | 2006-09-13 | 2012-02-21 | Canon Anelva Corporation | Magnetoresistive effect element manufacturing method and multi-chamber apparatus for manufacturing magnetoresistive effect element |
KR100872994B1 (ko) * | 2007-04-30 | 2008-12-09 | 주식회사 케이씨텍 | 플라즈마 발생장치 |
KR101216790B1 (ko) * | 2008-07-31 | 2012-12-28 | 캐논 아네르바 가부시키가이샤 | 플라즈마 처리 장치 및 전자 디바이스의 제조 방법 |
US8980382B2 (en) | 2009-12-02 | 2015-03-17 | Applied Materials, Inc. | Oxygen-doping for non-carbon radical-component CVD films |
US8741788B2 (en) | 2009-08-06 | 2014-06-03 | Applied Materials, Inc. | Formation of silicon oxide using non-carbon flowable CVD processes |
US9449859B2 (en) * | 2009-10-09 | 2016-09-20 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
US8449942B2 (en) | 2009-11-12 | 2013-05-28 | Applied Materials, Inc. | Methods of curing non-carbon flowable CVD films |
KR20120111738A (ko) | 2009-12-30 | 2012-10-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 융통성을 가진 질소/수소 비율을 이용하여 제조된 라디칼에 의한 유전체 필름의 성장 |
WO2011084812A2 (en) | 2010-01-06 | 2011-07-14 | Applied Materials, Inc. | Flowable dielectric using oxide liner |
CN102844848A (zh) | 2010-03-05 | 2012-12-26 | 应用材料公司 | 通过自由基成分化学气相沉积的共形层 |
US9004006B2 (en) * | 2010-04-28 | 2015-04-14 | Applied Materials, Inc. | Process chamber lid design with built-in plasma source for short lifetime species |
US9285168B2 (en) | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
US8664127B2 (en) | 2010-10-15 | 2014-03-04 | Applied Materials, Inc. | Two silicon-containing precursors for gapfill enhancing dielectric liner |
TWI427183B (zh) * | 2010-11-25 | 2014-02-21 | Ind Tech Res Inst | 電漿處理裝置 |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8450191B2 (en) | 2011-01-24 | 2013-05-28 | Applied Materials, Inc. | Polysilicon films by HDP-CVD |
US8716154B2 (en) | 2011-03-04 | 2014-05-06 | Applied Materials, Inc. | Reduced pattern loading using silicon oxide multi-layers |
US8445078B2 (en) | 2011-04-20 | 2013-05-21 | Applied Materials, Inc. | Low temperature silicon oxide conversion |
US8466073B2 (en) | 2011-06-03 | 2013-06-18 | Applied Materials, Inc. | Capping layer for reduced outgassing |
US9404178B2 (en) | 2011-07-15 | 2016-08-02 | Applied Materials, Inc. | Surface treatment and deposition for reduced outgassing |
US8617989B2 (en) | 2011-09-26 | 2013-12-31 | Applied Materials, Inc. | Liner property improvement |
US8551891B2 (en) | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
CN105274498B (zh) * | 2012-05-11 | 2017-10-27 | 中微半导体设备(上海)有限公司 | 气体喷淋头、其制造方法及薄膜生长反应器 |
US8889566B2 (en) | 2012-09-11 | 2014-11-18 | Applied Materials, Inc. | Low cost flowable dielectric films |
US9982343B2 (en) * | 2012-12-14 | 2018-05-29 | Applied Materials, Inc. | Apparatus for providing plasma to a process chamber |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US9412581B2 (en) | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US20180230597A1 (en) * | 2017-02-14 | 2018-08-16 | Applied Materials, Inc. | Method and apparatus of remote plasmas flowable cvd chamber |
US20220084796A1 (en) * | 2020-09-11 | 2022-03-17 | Applied Materials, Inc. | Plasma source with floating electrodes |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW279240B (en) * | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
USRE39969E1 (en) * | 1997-04-11 | 2008-01-01 | Tokyo Electron Limited | Processing system |
US6024799A (en) * | 1997-07-11 | 2000-02-15 | Applied Materials, Inc. | Chemical vapor deposition manifold |
US6892669B2 (en) | 1998-02-26 | 2005-05-17 | Anelva Corporation | CVD apparatus |
JP4151862B2 (ja) * | 1998-02-26 | 2008-09-17 | キヤノンアネルバ株式会社 | Cvd装置 |
JP2000345349A (ja) | 1999-06-04 | 2000-12-12 | Anelva Corp | Cvd装置 |
US6302964B1 (en) * | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6086677A (en) * | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
US6190732B1 (en) * | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US6245192B1 (en) * | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
JP4220075B2 (ja) * | 1999-08-20 | 2009-02-04 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
KR100378871B1 (ko) * | 2000-02-16 | 2003-04-07 | 주식회사 아펙스 | 라디칼 증착을 위한 샤워헤드장치 |
KR100419756B1 (ko) * | 2000-06-23 | 2004-02-21 | 아넬바 가부시기가이샤 | 박막 형성 장치 |
KR100767294B1 (ko) | 2000-06-23 | 2007-10-16 | 캐논 아네르바 가부시키가이샤 | Cvd장치 |
US6886491B2 (en) * | 2001-03-19 | 2005-05-03 | Apex Co. Ltd. | Plasma chemical vapor deposition apparatus |
JP3891267B2 (ja) * | 2001-12-25 | 2007-03-14 | キヤノンアネルバ株式会社 | シリコン酸化膜作製方法 |
JP3837718B2 (ja) | 2002-03-12 | 2006-10-25 | キヤノンアネルバ株式会社 | Cvd装置及びcvd装置における成膜後の後処理工程を行う方法 |
US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
JP4306403B2 (ja) | 2003-10-23 | 2009-08-05 | 東京エレクトロン株式会社 | シャワーヘッド構造及びこれを用いた成膜装置 |
-
2004
- 2004-03-17 JP JP2004076168A patent/JP4451684B2/ja not_active Expired - Lifetime
-
2005
- 2005-03-10 TW TW094107341A patent/TW200535962A/zh unknown
- 2005-03-15 KR KR1020050021314A patent/KR101183486B1/ko active IP Right Grant
- 2005-03-16 SG SG200501608A patent/SG115765A1/en unknown
- 2005-03-16 EP EP05290582A patent/EP1577420A1/en not_active Withdrawn
- 2005-03-16 US US10/907,023 patent/US7981216B2/en not_active Expired - Fee Related
- 2005-03-17 CN CN2005100548229A patent/CN1670920B/zh active Active
- 2005-03-17 CN CN2010101261975A patent/CN101812675B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN101812675A (zh) | 2010-08-25 |
TWI349951B (ja) | 2011-10-01 |
US20050217576A1 (en) | 2005-10-06 |
CN101812675B (zh) | 2011-11-16 |
KR20060043636A (ko) | 2006-05-15 |
TW200535962A (en) | 2005-11-01 |
CN1670920A (zh) | 2005-09-21 |
JP4451684B2 (ja) | 2010-04-14 |
CN1670920B (zh) | 2010-04-14 |
EP1577420A1 (en) | 2005-09-21 |
KR101183486B1 (ko) | 2012-09-20 |
US7981216B2 (en) | 2011-07-19 |
JP2005268396A (ja) | 2005-09-29 |
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