JP2005267734A - 昇圧回路及びそれを用いた不揮発性メモリ - Google Patents

昇圧回路及びそれを用いた不揮発性メモリ Download PDF

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Publication number
JP2005267734A
JP2005267734A JP2004077757A JP2004077757A JP2005267734A JP 2005267734 A JP2005267734 A JP 2005267734A JP 2004077757 A JP2004077757 A JP 2004077757A JP 2004077757 A JP2004077757 A JP 2004077757A JP 2005267734 A JP2005267734 A JP 2005267734A
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JP
Japan
Prior art keywords
booster circuit
circuit
stages
basic pump
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004077757A
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English (en)
Japanese (ja)
Other versions
JP2005267734A5 (enExample
Inventor
Takanori Yamazoe
孝徳 山添
Yuichiro Akimoto
雄一郎 秋元
Naonobu Ishida
尚信 石田
Eiji Yamazaki
英治 山崎
Nobuhiro Ohira
信裕 大平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2004077757A priority Critical patent/JP2005267734A/ja
Priority to US11/050,753 priority patent/US7221610B2/en
Priority to CN200510009456.5A priority patent/CN1670864A/zh
Publication of JP2005267734A publication Critical patent/JP2005267734A/ja
Publication of JP2005267734A5 publication Critical patent/JP2005267734A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

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  • Read Only Memory (AREA)
  • Dc-Dc Converters (AREA)
JP2004077757A 2004-03-18 2004-03-18 昇圧回路及びそれを用いた不揮発性メモリ Pending JP2005267734A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004077757A JP2005267734A (ja) 2004-03-18 2004-03-18 昇圧回路及びそれを用いた不揮発性メモリ
US11/050,753 US7221610B2 (en) 2004-03-18 2005-02-07 Charge pump circuit for generating high voltages required in read/write/erase/standby modes in non-volatile memory device
CN200510009456.5A CN1670864A (zh) 2004-03-18 2005-02-08 升压电路和使用了它的非易失性存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004077757A JP2005267734A (ja) 2004-03-18 2004-03-18 昇圧回路及びそれを用いた不揮発性メモリ

Publications (2)

Publication Number Publication Date
JP2005267734A true JP2005267734A (ja) 2005-09-29
JP2005267734A5 JP2005267734A5 (enExample) 2006-08-24

Family

ID=34986097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004077757A Pending JP2005267734A (ja) 2004-03-18 2004-03-18 昇圧回路及びそれを用いた不揮発性メモリ

Country Status (3)

Country Link
US (1) US7221610B2 (enExample)
JP (1) JP2005267734A (enExample)
CN (1) CN1670864A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7212441B2 (en) 2004-12-28 2007-05-01 Renesas Technology Corporation Non volatile semiconductor memory device
JP2008269727A (ja) * 2007-04-24 2008-11-06 Matsushita Electric Ind Co Ltd 昇圧回路、半導体記憶装置およびその駆動方法
JP2011216136A (ja) * 2010-03-31 2011-10-27 Fujitsu Semiconductor Ltd 半導体集積回路装置
JP2014183735A (ja) * 2013-03-15 2014-09-29 Freescale Semiconductor Inc 負電荷ポンプ調整

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100699872B1 (ko) * 2005-11-02 2007-03-28 삼성전자주식회사 전압 펌프의 수를 조절할 수 있는 상 변화 메모리 장치 및기입 구동 전압 발생 방법
JP4851903B2 (ja) * 2005-11-08 2012-01-11 株式会社東芝 半導体チャージポンプ
US7430676B2 (en) * 2006-03-03 2008-09-30 Apple, Inc. Method and apparatus for changing the clock frequency of a memory system
JP4829029B2 (ja) 2006-08-02 2011-11-30 株式会社東芝 メモリシステム及びメモリチップ
KR100809071B1 (ko) * 2006-09-25 2008-03-03 삼성전자주식회사 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법
KR100809072B1 (ko) * 2006-09-28 2008-03-03 삼성전자주식회사 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법
US8189396B2 (en) 2006-12-14 2012-05-29 Mosaid Technologies Incorporated Word line driver in a hierarchical NOR flash memory
US20090066407A1 (en) * 2007-09-12 2009-03-12 Rochester Institute Of Technology Charge pump systems and methods thereof
KR20120068228A (ko) * 2010-12-17 2012-06-27 에스케이하이닉스 주식회사 반도체 장치 및 그 동작방법
US9177616B2 (en) * 2012-10-04 2015-11-03 Cypress Semiconductor Corporation Supply power dependent controllable write throughput for memory applications
CN104682693B (zh) * 2013-12-02 2017-12-05 北京兆易创新科技股份有限公司 一种升压电路和非易失性存储器
US9449655B1 (en) 2015-08-31 2016-09-20 Cypress Semiconductor Corporation Low standby power with fast turn on for non-volatile memory devices
US10283207B2 (en) 2016-06-03 2019-05-07 Samsung Electronics Co., Ltd. Non-volatile memory devices comprising high voltage generation circuits and operating methods thereof
US11908528B2 (en) 2020-11-20 2024-02-20 Stmicroelectronics International N.V. Selectively configurable charge pump

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095794A (ja) 1983-10-28 1985-05-29 Hitachi Ltd 半導体集積回路
JPH0666114B2 (ja) 1984-09-21 1994-08-24 株式会社日立製作所 半導体集積回路
US5602794A (en) * 1995-09-29 1997-02-11 Intel Corporation Variable stage charge pump
JP3223504B2 (ja) * 1998-03-31 2001-10-29 日本電気株式会社 昇圧回路
US6151229A (en) * 1999-06-30 2000-11-21 Intel Corporation Charge pump with gated pumped output diode at intermediate stage
US6927441B2 (en) * 2001-03-20 2005-08-09 Stmicroelectronics S.R.L. Variable stage charge pump
JP4336489B2 (ja) 2002-11-18 2009-09-30 株式会社ルネサステクノロジ 半導体集積回路
JP4223270B2 (ja) 2002-11-19 2009-02-12 パナソニック株式会社 昇圧回路およびそれを内蔵した不揮発性半導体記憶装置
US6891764B2 (en) * 2003-04-11 2005-05-10 Intel Corporation Apparatus and method to read a nonvolatile memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7212441B2 (en) 2004-12-28 2007-05-01 Renesas Technology Corporation Non volatile semiconductor memory device
JP2008269727A (ja) * 2007-04-24 2008-11-06 Matsushita Electric Ind Co Ltd 昇圧回路、半導体記憶装置およびその駆動方法
JP2011216136A (ja) * 2010-03-31 2011-10-27 Fujitsu Semiconductor Ltd 半導体集積回路装置
JP2014183735A (ja) * 2013-03-15 2014-09-29 Freescale Semiconductor Inc 負電荷ポンプ調整

Also Published As

Publication number Publication date
US7221610B2 (en) 2007-05-22
US20050207236A1 (en) 2005-09-22
CN1670864A (zh) 2005-09-21

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