CN1670864A - 升压电路和使用了它的非易失性存储器 - Google Patents

升压电路和使用了它的非易失性存储器 Download PDF

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Publication number
CN1670864A
CN1670864A CN200510009456.5A CN200510009456A CN1670864A CN 1670864 A CN1670864 A CN 1670864A CN 200510009456 A CN200510009456 A CN 200510009456A CN 1670864 A CN1670864 A CN 1670864A
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CN
China
Prior art keywords
mentioned
booster circuit
nonvolatile memory
voltage
circuit
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Pending
Application number
CN200510009456.5A
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English (en)
Chinese (zh)
Inventor
山添孝德
秋元雄一郎
石田尚信
山崎英治
大平信裕
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Renesas Technology Corp
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Renesas Technology Corp
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Publication of CN1670864A publication Critical patent/CN1670864A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

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  • Read Only Memory (AREA)
  • Dc-Dc Converters (AREA)
CN200510009456.5A 2004-03-18 2005-02-08 升压电路和使用了它的非易失性存储器 Pending CN1670864A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004077757 2004-03-18
JP2004077757A JP2005267734A (ja) 2004-03-18 2004-03-18 昇圧回路及びそれを用いた不揮発性メモリ

Publications (1)

Publication Number Publication Date
CN1670864A true CN1670864A (zh) 2005-09-21

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ID=34986097

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CN200510009456.5A Pending CN1670864A (zh) 2004-03-18 2005-02-08 升压电路和使用了它的非易失性存储器

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Country Link
US (1) US7221610B2 (enExample)
JP (1) JP2005267734A (enExample)
CN (1) CN1670864A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1959846B (zh) * 2005-11-02 2012-01-11 三星电子株式会社 随机存取存储器、升压电荷泵和产生写驱动电压的方法
CN101154463B (zh) * 2006-09-25 2012-08-08 三星电子株式会社 包括高电压产生电路的半导体器件及产生高电压的方法
CN104682693A (zh) * 2013-12-02 2015-06-03 北京兆易创新科技股份有限公司 一种升压电路和非易失性存储器

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006185530A (ja) 2004-12-28 2006-07-13 Renesas Technology Corp 不揮発性半導体メモリ装置
JP4851903B2 (ja) * 2005-11-08 2012-01-11 株式会社東芝 半導体チャージポンプ
US7430676B2 (en) * 2006-03-03 2008-09-30 Apple, Inc. Method and apparatus for changing the clock frequency of a memory system
JP4829029B2 (ja) 2006-08-02 2011-11-30 株式会社東芝 メモリシステム及びメモリチップ
KR100809072B1 (ko) * 2006-09-28 2008-03-03 삼성전자주식회사 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법
US8189396B2 (en) 2006-12-14 2012-05-29 Mosaid Technologies Incorporated Word line driver in a hierarchical NOR flash memory
JP2008269727A (ja) * 2007-04-24 2008-11-06 Matsushita Electric Ind Co Ltd 昇圧回路、半導体記憶装置およびその駆動方法
US20090066407A1 (en) * 2007-09-12 2009-03-12 Rochester Institute Of Technology Charge pump systems and methods thereof
JP2011216136A (ja) * 2010-03-31 2011-10-27 Fujitsu Semiconductor Ltd 半導体集積回路装置
KR20120068228A (ko) * 2010-12-17 2012-06-27 에스케이하이닉스 주식회사 반도체 장치 및 그 동작방법
US9177616B2 (en) * 2012-10-04 2015-11-03 Cypress Semiconductor Corporation Supply power dependent controllable write throughput for memory applications
US8830776B1 (en) * 2013-03-15 2014-09-09 Freescale Semiconductor, Inc. Negative charge pump regulation
US9449655B1 (en) 2015-08-31 2016-09-20 Cypress Semiconductor Corporation Low standby power with fast turn on for non-volatile memory devices
US10283207B2 (en) 2016-06-03 2019-05-07 Samsung Electronics Co., Ltd. Non-volatile memory devices comprising high voltage generation circuits and operating methods thereof
US11908528B2 (en) 2020-11-20 2024-02-20 Stmicroelectronics International N.V. Selectively configurable charge pump

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095794A (ja) 1983-10-28 1985-05-29 Hitachi Ltd 半導体集積回路
JPH0666114B2 (ja) 1984-09-21 1994-08-24 株式会社日立製作所 半導体集積回路
US5602794A (en) * 1995-09-29 1997-02-11 Intel Corporation Variable stage charge pump
JP3223504B2 (ja) * 1998-03-31 2001-10-29 日本電気株式会社 昇圧回路
US6151229A (en) * 1999-06-30 2000-11-21 Intel Corporation Charge pump with gated pumped output diode at intermediate stage
US6927441B2 (en) * 2001-03-20 2005-08-09 Stmicroelectronics S.R.L. Variable stage charge pump
JP4336489B2 (ja) 2002-11-18 2009-09-30 株式会社ルネサステクノロジ 半導体集積回路
JP4223270B2 (ja) 2002-11-19 2009-02-12 パナソニック株式会社 昇圧回路およびそれを内蔵した不揮発性半導体記憶装置
US6891764B2 (en) * 2003-04-11 2005-05-10 Intel Corporation Apparatus and method to read a nonvolatile memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1959846B (zh) * 2005-11-02 2012-01-11 三星电子株式会社 随机存取存储器、升压电荷泵和产生写驱动电压的方法
CN101154463B (zh) * 2006-09-25 2012-08-08 三星电子株式会社 包括高电压产生电路的半导体器件及产生高电压的方法
CN104682693A (zh) * 2013-12-02 2015-06-03 北京兆易创新科技股份有限公司 一种升压电路和非易失性存储器
CN104682693B (zh) * 2013-12-02 2017-12-05 北京兆易创新科技股份有限公司 一种升压电路和非易失性存储器

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Publication number Publication date
US7221610B2 (en) 2007-05-22
US20050207236A1 (en) 2005-09-22
JP2005267734A (ja) 2005-09-29

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