JP2005260241A - 半導体デバイスの製造方法および半導体デバイス - Google Patents
半導体デバイスの製造方法および半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 5
- 230000009977 dual effect Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000348 solid-phase epitaxy Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Abstract
【解決手段】
本発明に係る方法では、表面を伴うシリコンの半導体ボディ(1)に、第1伝導性タイプのソース領域(2)とドレイン領域(3)、およびソース領域(2)とドレイン領域(3)との間の第1伝導性タイプとは反対の第2伝導性タイプのチャンネル領域(4)、および、第1ゲート誘電体(6A)によりチャンネル領域(4)から分離され、チャンネル領域(4)の一方の側に位置する第1ゲート領域(5A)、および、第2ゲート誘電体(6B)によりチャンネル領域(4)から分離され、チャンネル領域(4)の反対側に位置する第2ゲート領域(5B)が設けられ、さらに、双方のゲート領域(5A.5B)は、半導体ボディ内に形成された溝(7)の内部に形成されている。
【選択図】図8
Description
Claims (11)
- 表面を伴うシリコンの半導体ボディ(1)に、第1伝導性タイプのソース領域(2)およびドレイン領域(3)と、ソース領域(2)とドレイン領域(3)との間の第1伝導性タイプとは反対の第2伝導性タイプのチャンネル領域(4)と、第1ゲート誘電体(6A)によりチャンネル領域(4)から分離されチャンネル領域(4)の一方の側に位置する第1ゲート領域(5A)と、第2ゲート誘電体(6B)によりチャンネル領域(4)から分離されチャンネル領域(4)の反対側に位置する第2ゲート領域(5B)とが設けられ、さらに、双方のゲート領域(5A、5B)は、半導体ボディ内に形成された溝(7)の内部に形成されている、デュアルゲート電界効果トランジスタを含む半導体デバイス(10)の製造方法であって、
第1溝(7A)内に第1ゲート領域(5A)が形成され、さらに、第2溝(7B)内に第2ゲート領域(5B)が形成され、
さらに、第1および第2溝(7A,7B)の間の半導体ボディ(1)の部分によりチャンネル領域(4)が形成され、
さらに、半導体ボディ(1)の表面にソースおよびドレイン領域(2,3)が形成されることを特徴とする半導体デバイスの製造方法。 - 2つの平行な溝(7A,7B)が半導体ボディの表面内に形成され、その壁に誘電性層(60)が設けられ、さらに、半導体ボディ(1)上に導電層(80)を付着させることにより溝が導体(8)で満たされ、さらに、半導体ボディ(1)の表面のトップ上のその部分が、化学機械研磨により除去されることを特徴とする、請求項1に記載の半導体デバイスの製造方法。
- 導電層(80)として金属層が選択されることを特徴とする、請求項2に記載の半導体デバイスの製造方法。
- ソースおよびドレイン領域(2,3)が、半導体ボディ(1)の表面上にストリップ形のマスク層(9)を付着することにより形成され、それにより、溝が形成された、あるいは形成されることになる、この2つの領域をブリッジし、その後、ストリップ形のマスク層(9)の両側の半導体ボディ(1)に第1伝導性タイプのドーパントが導入されることを特徴とする、請求項1〜3のいずれか1つに記載の半導体デバイスの製造方法。
- ソースおよびドレイン領域(2、3)が注入によって形成されることを特徴とする、請求項1〜4のいずれか1つに記載の半導体デバイスの製造方法。
- 半導体ボディ(1)内に2つのデュアルゲートトランジスタ(T1,T2)を形成し、さらに、互いに隣合わせに、3つの溝(7A,7B,7C)を半導体ボディ(1)内に形成することにより、その真ん中の1つ(7B)が2つのデュアルゲートトランジスタ(T1,T2)の双方のための共通ゲート領域を形成することを特徴とする、請求項1〜5のいずれか1つに記載の半導体デバイスの製造方法。
- 2つのデュアルゲートトランジスタ(T1,T2)のうちの一方がnpnトランジスタとして形成され、他方がpnpトランジスタとして形成されることを特徴とする、請求項6に記載の半導体デバイスの製造方法。
- デュアルゲートトランジスタのソースおよびドレイン領域(2,3)が、さらなる溝(17)により、チャンネル領域(4)の反対側の半導体ボディ(1)から分離されることを特徴とする、請求項1〜7のいずれか1つに記載の半導体デバイスの製造方法。
- デュアルゲートトランジスタが、従来のCMOS技術により作成される他の従来のトランジスタと共に形成されることを特徴とする、請求項1〜8のいずれか1つに記載の半導体デバイスの製造方法。
- 表面を伴うシリコンの半導体ボディ(1)と、第1伝導性タイプのソース領域(2)およびドレイン領域(3)と、ソース領域(2)とドレイン領域(3)との間の第1伝導性タイプとは反対の第2伝導性タイプのチャンネル領域(4)と、第1ゲート誘電体(6A)によりチャンネル領域(4)から分離されチャンネル領域(4)の一方の側に位置する第1ゲート領域(5A)と、第2ゲート誘電体によりチャンネル領域(4)から分離されチャンネル領域(4)の反対側に位置する第2ゲート領域(5B)を伴う半導体ボディ(1)とを有し、さらに、双方のゲート領域(5A,5B)が、半導体ボディ内に形成された溝(7)の内部に形成されているデュアルゲート電界効果トランジスタを含む半導体デバイスであって、
第1溝内(7A)に第1ゲート領域(5A)が形成され、
さらに、第2溝(7B)内に第2ゲート領域(5B)が形成され、
さらに、第1および第2溝(7A,7B)の間の半導体ボディ(1)の部分によりチャンネル領域(4)が形成され、
さらに、半導体ボディ(1)の表面にソースおよびドレイン領域(2,3)が形成されていることを特徴とする半導体デバイス。 - デバイスが、共通の1つのゲート領域を有する2つの隣接するデュアルゲートトランジスタを含んでいることを特徴とする、請求項10に記載の半導体デバイス。
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US11110065B2 (en) | 2018-03-06 | 2021-09-07 | Profeat Biotechnology Co., Ltd. | Sintered ferrous amino acid particles and use of the same against a virus |
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JP3782021B2 (ja) * | 2002-02-22 | 2006-06-07 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、半導体基板の製造方法 |
KR100555518B1 (ko) * | 2003-09-16 | 2006-03-03 | 삼성전자주식회사 | 이중 게이트 전계 효과 트랜지스터 및 그 제조방법 |
-
2005
- 2005-02-22 TW TW094105216A patent/TWI287856B/zh not_active IP Right Cessation
- 2005-03-10 JP JP2005067354A patent/JP2005260241A/ja active Pending
- 2005-03-11 CN CN200510056325.2A patent/CN1691296A/zh active Pending
- 2005-03-11 US US11/077,973 patent/US7326620B2/en active Active
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2007
- 2007-12-19 US US11/960,382 patent/US20080105922A1/en not_active Abandoned
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JPH0482271A (ja) * | 1990-07-24 | 1992-03-16 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH06112480A (ja) * | 1992-09-25 | 1994-04-22 | Kawasaki Steel Corp | 半導体装置並びにその製造方法 |
JPH06151738A (ja) * | 1992-11-13 | 1994-05-31 | Nippon Steel Corp | 半導体装置及びその製造方法 |
JP2001274398A (ja) * | 1999-10-19 | 2001-10-05 | Denso Corp | 半導体装置及びその製造方法 |
JP2002198518A (ja) * | 2000-12-25 | 2002-07-12 | Toshiba Corp | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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US7326620B2 (en) | 2008-02-05 |
US20080105922A1 (en) | 2008-05-08 |
TW200531217A (en) | 2005-09-16 |
CN1691296A (zh) | 2005-11-02 |
US20050236663A1 (en) | 2005-10-27 |
TWI287856B (en) | 2007-10-01 |
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